A transient operation method for a separation device includes a separation membrane complex including: a separation membrane; and a substrate arranged on one side of the separation membrane, the separation device having a first flow path and a second flow path, the first flow path being positioned on a side closer to the separation membrane of the separation membrane complex, the second flow path being positioned on a side closer to the substrate of the separation membrane complex, the transient operation method including heating the separation membrane complex by supplying a gas at least to the second flow path. The gas supplied to the second flow path satisfies the specific formula.
A gas separation apparatus includes a gas supply part and a zeolite membrane. The gas supply part supplies a mixed gas at a pressure greater than or equal to 10 atm and less than or equal to 200 atm. The mixed gas contains at least CH4, CO2, and N2. A water content of the mixed gas is made less than or equal to 3000 ppm. The zeolite membrane allows CO2 and N2 in the mixed gas to permeate therethrough, to thereby separate CO2 and N2 from CH4. The zeolite membrane is made of zeolite. The zeolite contains Al. A ratio of alkali metal to whole framework elements in the zeolite is less than or equal to 6.0 mol %. An amount of substance of the alkali metal in the zeolite is less than an amount of substance of Al.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A transient operation method for a separation device includes a separation membrane complex including: a separation membrane; and a substrate arranged on one side of the separation membrane, the separation device having a first flow path and a second flow path, the first flow path being positioned on a side closer to the separation membrane of the separation membrane complex, the second flow path being positioned on a side closer to the substrate of the separation membrane complex, the transient operation method including supplying gases to the first flow path and the second flow path, respectively, and heating the separation membrane complex. An average relative humidity of a gas A supplied to the first flow path is higher than an average relative humidity of a gas B supplied to the second flow path.
A gas adsorption/desorption unit and a gas adsorption/desorption device, in which a gas absorbent can be more easily and evenly heated. A gas adsorption/desorption unit according to this invention includes: one or more first honeycomb structures including at least one honeycomb structure portion having an outer peripheral wall and partition walls provided on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells each extending from one end face to other end face of the honeycomb structure portion to form a flow path, and a pair of electrode layers disposed on the outer peripheral wall or the end faces of the honeycomb structure portion; and electrode terminals connected to the pair of electrode layers, wherein at least one honeycomb structure portion of the one or more first honeycomb structures includes a gas adsorbent and is made of a material having a PTC property.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
5.
METHOD FOR MANUFACTURING JOINED BODY AND JOINED BODY
Provided is a method for manufacturing a joined body, the method including: an outer peripheral processing step of forming an outer peripheral processed portion, ground inward from an edge portion along a main surface of one of a piezoelectric material substrate and a support substrate; a joining step of joining one of the piezoelectric material substrate and the support substrate, which is formed thereon with the outer peripheral processed portion, to a main surface of the other one, with a main surface side of the one of the piezoelectric material substrate and the support substrate serving as a joining surface side; and a thinning step of thinning the joined piezoelectric material substrate. Therefore, there are provided a joined body etc. in which a corner portion is not formed in an outer peripheral portion and breakage or cracking is less likely to occur in the outer peripheral portion in subsequent steps.
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
B32B 9/04 - Layered products essentially comprising a particular substance not covered by groups comprising such substance as the main or only constituent of a layer, next to another layer of a specific substance
A heater element includes: a honeycomb structure portion capable of generating heat by energization, including an outer peripheral wall, and partition walls disposed on an inner peripheral side of the outer peripheral wall, the partition walls partitioning a plurality of cells that form flow paths extending from a first end surface to a second end surface, and the partition walls including a material having a PTC characteristic; a first electrode layer covering a part or all of a surface of the partition walls forming the first end surface; a second electrode layer covering a part or all of a surface of the partition walls forming the second end surface; a first moisture absorbent-containing layer covering a part of an outer surface of the first electrode layer; and a second moisture absorbent-containing layer covering a part of an outer surface of the second electrode layer.
H05B 3/16 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being mounted on an insulating base
7.
METHOD FOR PRODUCING BETA-ALUMINA SINTERED COMPACT
Provided is a method for producing a beta-alumina sintered compact that includes: a step for preparing a bottomed cylindrical first molded body containing a raw material composition of beta-alumina; a step for placing the first molded body on a first setter placed at a predetermined location in a firing furnace and having a horizontal mounting surface, with the first molded body inverted and the open end facing downward; a step for firing the first molded body to produce a bottomed cylindrical first beta-alumina sintered compact; a step for measuring the straightness of the first beta-alumina sintered compact and identifying the bend direction; a step for preparing a bottomed cylindrical second molded body containing a raw material composition of beta-alumina; a step for placing the second molded body on a second setter placed at the same location as the first setter in the firing furnace and having a mounting surface inclined downward toward the side opposite to the bend direction, with the second molded body inverted and the open end facing downward; and a step for firing the second molded body and producing a bottomed cylindrical second beta-alumina sintered compact having better straightness than the first beta-alumina sintered compact.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
H01B 1/08 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances oxides
An AlN single crystal substrate containing carbon and boron as impurities is provided, in which a ratio of a boron concentration to a carbon concentration is 0.22≤[boron concentration]/[carbon concentration]≤6.85 when the carbon concentration and the boron concentration are expressed in terms of the number of atoms per 1 cm3. By adjusting the concentration of impurities, an AlN single crystal substrate that can achieve a high transmittance in the ultraviolet region; and the like are provided.
KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION (Japan)
NGK INSULATORS, LTD. (Japan)
Inventor
Takakuwa, Osamu
Ishikawa, Takahiro
Abstract
Provided is a hydrogen-resistant material for being processed into a hydrogen-resistant structural part used by being operated in a hydrogen atmosphere. This material is composed of a beryllium copper alloy containing 0.2 to 2.7% by mass of Be, and 0.2 to 2.5% by mass in total of at least one selected from Co, Ni, and Fe, the balance consisting of Cu and unavoidable impurities, a total content of Cu, Be, Co, Ni, and Fe being 99.0% by mass of more of the beryllium copper alloy. This hydrogen-resistant material exhibits a tensile strength of 700 MPa or more and exhibits a relative reduction of area (RRA) of 0.80 or more according to a slow strain rate tensile test, in each of an air atmosphere and a hydrogen atmosphere, and exhibits a fracture toughness value KIC of 50 MPa·m1/2 or more, in each of an air atmosphere and a hydrogen atmosphere.
A sensor element includes an element body, an adjustment pump cell having an inner electrode, and a measurement pump cell having a measurement electrode. When a first diffusion resistance from the outside to the inner electrode through a gas inlet is defined as Da, and a second diffusion resistance from the outside to the measurement electrode through the gas inlet is defined as Db, the sensor element is configured such that Db×Db/Da≥3000 [cm−1] is satisfied.
A sensor element includes an element body, at least one adjustment pump cell having an inner electrode disposed in an oxygen concentration adjustment chamber, a measurement electrode, a diffusion rate-limiting section. A height t [mm] of the diffusion rate-limiting section, obtained based on the following parameters: a path length L [cm] of the diffusion rate-limiting section; a width H [cm] of the diffusion rate-limiting section; a limiting current Ip [A] of the adjustment pump cell; the Faraday constant F [A·sec/mol]; the diffusion coefficient D [cm2/sec] of oxygen; the gas constant R [cm3·atm/mol·K]; a temperature T [K] of the inner electrode; an oxygen partial pressure Poe [atm] in the measurement gas; and an oxygen partial pressure Pod [atm] in the oxygen concentration adjustment chamber, is 0.0035 or greater.
A sensor element for detecting a concentration of a specific gas in a measurement-object gas, the sensor element includes: an element body including an oxygen-ion-conductive solid electrolyte layer, and including a measurement-object gas flow section inside that introduces the measurement-object gas and allows the measurement-object gas to flow through; an adjustment pump cell including an inner adjustment electrode provided in an oxygen concentration adjustment chamber of the measurement-object gas flow section; and a measurement pump cell including a measurement electrode provided in a measurement chamber that is located downstream of the oxygen concentration adjustment chamber in the measurement-object gas flow section; wherein, letting Ve [mm3] be a volume of the measurement electrode, and Vr [mm3] be a volume of the measurement chamber, and defining a volume ratio as Fv=Ve/(Vr−Ve), 0.05≤Fv≤0.21 is satisfied.
This method for supporting material creation has an evaluation step in which, selected from between the crystal phases and the physical properties of a ceramic material obtained after sintering a ceramic powder obtained by reactive synthesis of a plurality of ceramic raw materials, the physical properties are predicted by evaluating the physical properties of said ceramic powder.
G16C 60/00 - Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
14.
JOINED GLASS, GLASS JOINED BODY, METHOD FOR PRODUCING GLASS JOINED BODY, AND METHOD FOR INSPECTING GLASS JOINED BODY
Heating elements; infrared heating panels; far-infrared
electric fires for industrial purposes; drying apparatus and
installations, and their parts and accessories; far-infrared
electric fires used in drying apparatus and installations;
recuperators and their parts and accessories; far-infrared
electric fires used in recuperators; steamers and their
parts and accessories; far-infrared electric fires used in
steamers; evaporators and their parts and accessories;
far-infrared electric fires used in evaporators; distillers
and their parts and accessories; far-infrared electric fires
used in distillers; heat exchangers and their parts and
accessories; far-infrared electric fires used in heat
exchangers; industrial furnaces and their parts and
accessories; far-infrared electric fires used in industrial
furnaces; nuclear reactors and their parts and accessories;
far-infrared electric fires used in nuclear reactors.
Heating elements; infrared heating panels; far-infrared
electric fires for industrial purposes; drying apparatus and
installations, and their parts and accessories; far-infrared
electric fires used in drying apparatus and installations;
recuperators and their parts and accessories; far-infrared
electric fires used in recuperators; steamers and their
parts and accessories; far-infrared electric fires used in
steamers; evaporators and their parts and accessories;
far-infrared electric fires used in evaporators; distillers
and their parts and accessories; far-infrared electric fires
used in distillers; heat exchangers and their parts and
accessories; far-infrared electric fires used in heat
exchangers; industrial furnaces and their parts and
accessories; far-infrared electric fires used in industrial
furnaces; nuclear reactors and their parts and accessories;
far-infrared electric fires used in nuclear reactors.
A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
18.
COMPOSITE SUBSTRATE AND METHOD OF MANUFACTURING COMPOSITE SUBSTRATE
A composite substrate includes a piezoelectric material substrate made of an LiNbO3 or LiTaO3 material, a support substrate that supports the piezoelectric material substrate, and an intermediate layer provided on the support substrate, in which the piezoelectric material substrate and the support substrate are bonded to each other via the intermediate layer, the intermediate layer contains at least one of SiO2, MgF2, and CaF2, and the piezoelectric material substrate includes a first layer that does not contain inert gas atoms, a second layer that is disposed on a side closer to the intermediate layer than the first layer and contains the inert gas, and a third layer that contacts the intermediate layer, and does not contain the inert gas or contains the inert gas with a lower content than the content in the second layer.
G02B 6/13 - Integrated optical circuits characterised by the manufacturing method
G02B 6/12 - Light guidesStructural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
A thermal insulation material 3 is for use in a battery pack including a battery group in which single batteries and the thermal insulation material are stacked in an alternating manner. The thermal insulation material 3 comprises: a plate-like member 31 having through holes 31h formed by partitioning with a partition wall 31w comprising an inorganic non-metal material; and a reinforcement member for reinforcing the plate-like member 31. As a result, it is possible to provide a thermal insulation material and a method for producing the thermal insulation material that can suppress the spread of heat to an adjacent single battery when a single battery generates abnormal heat.
H01M 10/658 - Means for temperature control structurally associated with the cells by thermal insulation or shielding
H01M 10/654 - Means for temperature control structurally associated with the cells located inside the innermost case of the cells, e.g. mandrels, electrodes or electrolytes
H01M 10/655 - Solid structures for heat exchange or heat conduction
21.
SODIUM-SULFUR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SODIUM-SULFUR SECONDARY BATTERY
This sodium-sulfur secondary battery is provided with: a positive electrode container in which an inner surface thereof is an anti-corrosion layer comprising an Fe-Cr alloy; a solid electrolyte tube disposed inside the positive electrode container so as to be separated from the positive electrode container; a positive electrode chamber which is surrounded by the positive electrode container and the solid electrolyte tube and in which a positive electrode current collector containing sulfur, which is a positive electrode active material, is disposed; and a negative electrode chamber which is the interior of the solid electrolyte tube separated from the positive electrode chamber by the solid electrolyte tube and in which metal sodium, which is a negative electrode active material, is disposed, wherein a high resistance layer containing glass fibers is provided integrally with the positive electrode current collector on the solid electrolyte tube side of the positive electrode current collector, the high resistance layer is in contact with the solid electrolyte tube, and a carbon sheet is interposed between the positive electrode current collector and the inner surface of the positive electrode container.
A vehicle air conditioning system includes: an air conditioning duct through which air can flow; at least one humidity controlling device including: a honeycomb structure having an outer peripheral wall and partition walls provided on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face; and a moisture absorbing layer provided on a surface of each of the partition walls, the humidity controlling device being provided in the air conditioning duct; and a control unit configured to control a flow velocity of the air flowing through the cells of the humidity controlling device. The control unit includes controlling the flow velocity of the air flowing in the humidity controlling device to 0.23 to 1.40 m/s in the moisture absorption process of the humidity controlling device.
D04B 1/14 - Other fabrics or articles characterised primarily by the use of particular thread materials
D04B 21/12 - Open-work fabrics characterised by thread material
D06M 11/83 - Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with metalsTreating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with inorganic substances or complexes thereofSuch treatment combined with mechanical treatment, e.g. mercerising with metal-generating compounds, e.g. metal carbonylsReduction of metal compounds on textiles
A wafer mounting stage 10 comprising: a ceramic plate 20 that has a wafer mounting surface 21 on an upper surface thereof; a gas path 52 that a gas can pass through in a vertical direction of the ceramic plate 20; a conductive base plate 30 that is joined to a lower surface of the ceramic plate 20 and used as a plasma generation electrode; a gas supply passage 34 that is provided to the inside of the base plate 30 and that communicates with the gas path 52; and a first shield member 61 that is provided surrounding the gas path 52 and that is electrically connected to the base plate 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer mounting stand 10 comprises: a ceramic plate 20 which includes a wafer mounting surface 21 on the upper surface thereof; a gas passage 52 through which gas can pass in the vertical direction of the ceramic plate 20; a conductive base plate 30 which is joined to the lower surface of the ceramic plate 20 and is utilized as a plasma generation electrode; and a gas supply path 34 which is provided inside of the base plate 30 and communicates with the gas passage 52. The wafer mounting stand 10 also comprises an electric field adjusting conductor 60. The electric field adjusting conductor 60 is provided so as to extend, from the lower surface of the ceramic plate 20 or a position below the lower surface to an area in front of the wafer mounting surface 21 in the vertical direction in the vicinity of the gas passage 52, and is electrically connected to the base plate 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
26.
CREATION METHOD OF OPERATION PLAN FOR STORAGE BATTERY AND OPERATION PLAN CREATION SUPPORT DEVICE
A creation method of an operation plan for a storage battery disclosed herein includes: an output section setting step of selectively setting each of a plurality of unit time sections to one of a first unit time section, in which a charge/discharge output is made constant, or a second unit time section, in which the charge/discharge output is varied; and a variation pattern setting step for setting variation patterns of the charge/discharge outputs in the second unit time section, by setting an output ratio which is the ratio of the charge/discharge output to a reference output, for each of a plurality of pattern setting units obtained by dividing the unit time sections at predetermined time intervals. In the variation pattern setting step, a reference value for a predetermined setting index selected in advance is calculated from charge/discharge output result values for past charging/discharging operations having a common use with the second unit time sections subject to the variation pattern setting, and the output ratios for the variation patterns are set so that an index value, which is the value of the setting index for the variation patterns, satisfies a predetermined condition based on the reference value.
Provided is a composite substrate capable of accommodating a conductor pattern having a desired thickness between an inorganic material substrate and a support substrate, and of stably bonding the inorganic material substrate and the support substrate. A composite substrate according to one embodiment of the present invention comprises an inorganic material substrate, a conductor pattern, a dielectric film, and a support substrate. The inorganic material substrate has a substrate surface. A recess is provided on the substrate surface. The substrate surface includes a first portion positioned outside the recess and a second portion that is an inner surface of the recess. The conductor pattern is embedded in the recess. A step is formed between the conductor pattern and the first portion of the substrate surface. The dielectric film is provided on the substrate surface so as to cover the step. The support substrate is positioned on the opposite side of the dielectric film from the inorganic material substrate. The support substrate is bonded to the dielectric film.
Provided is a composite substrate capable of accommodating a conductor pattern having a desired thickness between an inorganic material substrate and a support substrate, and of improving heat dissipation and bonding reliability. A composite substrate according to one embodiment of the present invention comprises an inorganic material substrate, a conductor pattern, a dielectric film, and a support substrate. The inorganic material substrate has a substrate surface. A recess is provided on the substrate surface. The conductor pattern is embedded in the recess. The conductor pattern exposes at least a part of the substrate surface. The dielectric film is provided so as to cover the conductor pattern and the substrate surface exposed from the conductor pattern. The support substrate is positioned on the side opposite to the inorganic material substrate with respect to the dielectric film. The dielectric film and the support substrate are directly bonded to each other.
To provide a processing system with which it is possible to surpress the occurrence of gaps when pulling a workpiece onto a support and position the workpiece with good accuracy. A processing system for cutting and milling a bottomed cylindrical ceramic workpiece having an opening at one end includes: a first support disposed so as to be engageable with the inner peripheral surface of the open end of the workpiece, the first support being for supporting the workpiece from the open end side so that the workpiece can rotate around an axis; a second support disposed so as to be engageable with the bottom of the workpiece, the second support being for supporting the workpiece from the bottom side so that the workpiece can rotate around the axis; a third support capable of moving the workpiece to the second support side while gripping the outer peripheral surface of the workpiece, the third support being for engaging the workpiece with the second support; a motor for rotating the first support; and a processing unit for cutting and milling the workpiece while supplying cooling water to the workpiece.
B28D 7/04 - Accessories specially adapted for use with machines or devices of the other groups of this subclass for supporting or holding work
B24B 9/00 - Machines or devices designed for grinding edges or bevels on work or for removing burrsAccessories therefor
B28D 1/22 - Working stone or stone-like materials, e.g. brick, concrete, not provided for elsewhereMachines, devices, tools therefor by cutting, e.g. incising
A heater for a semiconductor manufacturing apparatus includes a ceramic base and a heating element. The ceramic base contains aluminum nitride. The heating element is embedded in the ceramic base. The ceramic base contains two or more kinds of rare earth elements and contains Yb as one of the rare earth elements. A total content ratio of the rare earth elements in the ceramic base is 4.5 mass % or less in terms of oxide. A content ratio of Yb in the ceramic base is 0.3 mass % or more and 1.3 mass % or less in terms of oxide.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A joined body 1 includes a piezoelectric layer 11a including a piezoelectric material; a dielectric film 13 arranged under the piezoelectric layer 11a; a support substrate 14 joined with the piezoelectric layer 11a via the dielectric film 13; and a sacrificial layer provided between the support substrate 14 and the piezoelectric layer 11a, and capable of including a hollow part 17 formed therein. The dielectric film 13 includes SiO2 as a main component, and has a H content of 0% or more and 1% or less in terms of atomic ratio. As a result of this, a desired joined body including a hollow part is provided. Further, there is provided a method for manufacturing a joined body, in which the etching rate of the dielectric film is small, and by which the sacrificial layer can be selectively removed during etching.
H10N 30/00 - Piezoelectric or electrostrictive devices
H10N 30/072 - Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
H10N 30/086 - Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
32.
MANUFACTURING METHOD AND JOINING METHOD OF JOINED BODY
A method for manufacturing a joined body, includes: an activating step of activating respective surfaces of a first substrate and a second substrate having the surfaces each including SiO2 as a main component by a plasma; a joining step of joining the activated surfaces of the first substrate and the second substrate at a degree of vacuum of 1 mbar or more and 400 mbar or less; and a heating step of heating the first substrate and the second substrate joined with each other. As a result of this, the manufacturing method and the joining method of a joined body capable of combining the reduction of generation of voids and the joint strength are provided.
In the present invention, a ceramic heater, which is a member for a semiconductor manufacturing apparatus, comprises: a ceramic plate 20; a thermocouple passage 40; and a thermal spray coating 43. The thermocouple passage 40 includes: a passage hole 41, which is bored from an outer peripheral surface 20c of the ceramic plate 20 towards a thermocouple insertion port 40a provided on the centre lower surface-side of the ceramic plate 20; and an insertion member 42, which is inserted into the passage hole 41 from an opening 41a, of the passage hole 41, opening to the outer peripheral surface 20c of the ceramic plate 20. The thermal spray coating 43 closes a gap between the insertion member 42 and the passage hole 41.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a heater for a semiconductor manufacturing apparatus capable of improving the volume resistivity of a ceramic substrate and being stably manufactured. A heater for a semiconductor manufacturing apparatus according to an embodiment of the present invention comprises a ceramic substrate and a heating element. The ceramic substrate contains aluminum nitride. The heating element is embedded in the ceramic substrate. The ceramic substrate contains two or more kinds of rare earth elements and contains Yb as a rare earth element. The total content ratio of the rare earth elements in the ceramic substrate is 4.5 mass % or less in terms of oxide. The content ratio of Yb in the ceramic substrate is 0.3 mass % or more and 1.3 mass % or less in terms of oxide.
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H05B 3/10 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
Semiconductor manufacturing machines; parts and accessories
of semiconductor manufacturing machines; laminated
semiconductor chip manufacturing machines; parts and
accessories of laminated semiconductor chip manufacturing
machines; semiconductor manufacturing equipment components,
namely, ceramic substrates for arranging and temporarily
bonding semiconductor chips and forming a redistribution
layer on a semiconductor substrate in the semiconductor
substrate manufacturing process; semiconductor manufacturing
equipment components, namely, ceramic substrates for
processing and transporting semiconductor substrates in the
semiconductor substrate manufacturing process semiconductor
manufacturing equipment components, namely, ceramic
substrates used in the process of semiconductor packaging,
including fan-out wafer-level packaging (FOWLP).
A ceramic susceptor includes a substrate-mounting plate. The substrate-mounting plate contains aluminum nitride and a spinel. A content ratio of the aluminum nitride in the substrate-mounting plate is 95.0 mass % or more and 99.9 mass % or less. A content ratio of the spinel in the substrate-mounting plate is 0.1 mass % or more and 1.0 mass or less in terms of oxide. The aluminum nitride has a polycrystalline structure. The spinel is positioned at a grain boundary between crystal grains of the aluminum nitride. The spinel has a lattice constant of 8.040 Å or more and 8.110 Å or less.
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
37.
SEPARATION MEMBRANE SYSTEM AND TEMPERATURE INCREASE METHOD FOR A SEPARATION MEMBRANE
A separation membrane system includes: a supply line configured to supply a mixed gas of a polar gas and a non-polar gas to a separation membrane; and a measurement device configured to measure a flow rate of the non-polar gas that has permeated through the separation membrane. In the separation membrane system, the mixed gas may be a heated gas.
Provided is a ceramic susceptor capable of improving volume resistivity at high temperatures. The ceramic susceptor according to an embodiment of the present invention has a substrate mounting plate. The substrate mounting plate includes aluminum nitride and spinel. The aluminum nitride content in the substrate mounting plate is 95.0 mass% to 99.9 mass%. The spinel content in the substrate mounting plate is 0.1 mass% to 1.0 mass% in terms of oxides. The aluminum nitride has a polycrystalline structure. The spinel is located at the grain boundary between crystal grains of the aluminum nitride. The lattice constant of the spinel is 8.040 Å to 8.110 Å.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A pillar-shaped honeycomb structure,
wherein a cell density based on a total number of a plurality of inlet cells and a plurality of outlet cells is 29 to 43 cells/cm2,
wherein an average thickness of partition walls is 0.173 mm or more and 0.236 mm or less, and
wherein assuming an average value of opening diameters of the plurality of outlet cells except for those adjacent to an outer peripheral side wall is Dout, and an average value of opening diameters of the plurality of inlet cells except for those adjacent to the outer peripheral side wall is Din, 1.20≤Din/Dout≤1.38 is satisfied.
A honeycomb structure includes an outer peripheral side wall; a plurality of first cells having an opening on the first end surface and having a sealing portion on the second end surface; and a plurality of second cells having the sealing portion on the first end surface and having the opening on the second end surface, wherein the first cells and the second cells are arranged adjacent to each other with a partition wall interposed therebetween; wherein the sealing portion is composed of a ceramic containing MgO:9.0 to 13.4% by mass, Al2O3: 29.0 to 35.5% by mass, and SiO2: 50.0 to 58.0% by mass, and wherein an arithmetic average height Sa of the sealing portions on the first end surface and the second end surface is 18.0 μm or less, respectively.
A honeycomb filter includes a pillar-shaped honeycomb structure body having a porous partition wall arranged to surround a plurality of cells; and
a plugging portion provided at an open end on the first end face side or the second end face side of each of the cells, wherein
In a pore diameter distribution of the partition wall obtained by structural analysis, the pore diameter (m) whose cumulative pore volume is 90% of the total pore volume is defined as D90 (m),
In a porous structure of the partition wall obtained by the structural analysis, the average value (m) of the equivalent circle diameter of the neck part having the smallest flow path area of communication pores in the porous structure is defined as an average neck diameter (m), and
the product of the D90 (m) and the average neck diameter (m) is 1.0×10−10 m2 or more and 9.0×10−10 m2 or less.
An inductor includes a conductor portion and a magnetic substance portion. The conductor portion is made of a sintered material containing sintered metal. The magnetic substance portion is made of ceramics, and includes a plurality of magnetic substance segments disposed at different positions in one direction. Each of the magnetic substance segments is penetrated by the conductor portion and inorganically bonded to the conductor portion. The plurality of magnetic substance segments include at least one first magnetic substance segment and at least one second magnetic substance segment. The at least one first magnetic substance segment is made of a first magnetic material with a permeability having a peak at a first frequency. The at least one second magnetic substance segment is made of a second magnetic material with a permeability having a peak at a second frequency different from the first frequency.
H01L 21/48 - Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups or
A method of manufacturing a wavelength conversion element including a periodic polarization inversion structure, includes: forming the periodic polarization inversion structure by alternately forming polarization inversion portions and non-polarization inversion portions on a ferroelectric substrate; etching a surface of the ferroelectric substrate provided with the periodic polarization inversion structure, to form level differences between the polarization inversion portions and the non-polarization inversion portions; forming a joining layer having a first thickness on the ferroelectric substrate provided with the level differences; polishing a surface of the joining layer to cause the joining layer to have a second thickness; and joining a support substrate to the polished surface of the joining layer.
A separation membrane complex includes a porous support and a separation membrane which is formed on the support and composed of metal organic framework MIL-96. In an X-ray diffraction pattern obtained by X-ray irradiation onto a surface of the separation membrane, an intensity of a peak existing in the vicinity of 2θ=5.6° is not higher than 0.15 times an intensity of a peak existing in the vicinity of 2θ=9.0° and not higher than 0.4 times an intensity of a peak existing in the vicinity of 2θ=16.6°.
B01D 53/02 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography
B01D 67/00 - Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
45.
COMPOSITE SUBSTRATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE
Provided is a composite substrate from which it is possible to obtain, at a high yield, a semiconductor element having excellent performance. This composite substrate comprises a support substrate, a group III element nitride film, and a device layer formed of a group III element nitride in the stated order. The average value of sheet resistances in the surface of the device layer is 400 Ω/□ or less, and the variation of the sheet resistances in the surface of the device layer is 20% or less.
H01L 29/80 - Field-effect transistors with field effect produced by a PN or other rectifying junction gate
H01S 5/323 - Structure or shape of the active regionMaterials used for the active region comprising PN junctions, e.g. hetero- or double- hetero-structures in AIIIBV compounds, e.g. AlGaAs-laser
To provide a ceramic substrate and a composite substrate capable of suppressing grain pull-out. A ceramic substrate according to an embodiment of the present invention contains an aluminum nitride sintered body. The aluminum nitride sintered body has a plurality of first pores. On the surface of the ceramic substrate, the maximum length of each of the plurality of first pores is less than 0.5 μm.
C04B 35/581 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on borides, nitrides or silicides based on aluminium nitride
C04B 38/00 - Porous mortars, concrete, artificial stone or ceramic warePreparation thereof
An operation plan creation system disclosed herein includes: a storage unit for storing feature amount data on each of a plurality of products manufactured in the past, the feature amount data including data on the power consumption when manufacturing each of the plurality of products; a reception unit for receiving requests for creating an operation plan; an extraction unit for extracting data on a product to be manufactured from a production plan including data on the product when a request for creating an operation plan is received by the reception unit; a first determination unit for determining whether the product extracted by the extraction unit matches one of the plurality of products stored in the storage unit; a second determination unit for determining whether a corresponding physical model can be generated using the product as the specific product when it is determined that the product does not match; a machine learning model generation unit that, when it is determined that a corresponding physical model cannot be generated, generates a machine learning model corresponding to the specific product using at least a portion of the feature amount data on the plurality of products stored in the storage unit; a power consumption prediction unit that predicts the power consumption of the specific product using the machine learning model of the specific product generated by the machine learning model generation unit; an operation plan creation unit that uses data on the power consumption of the specific product, predicted by the power consumption prediction unit, to create an operation plan so that power is within a desired power range in a predetermined period; and an output unit that outputs the operation plan created by the operation plan creation unit.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
This energy management system is provided with at least one of a power generation facility and a power storage facility. An operation plan creation system of the energy management system comprises: a storage unit that stores feature amount data of each of a plurality of products that have been manufactured in the past; an extraction unit that extracts data of a product from a production plan; a first determination unit that determines whether or not the extracted product matches one of the plurality of products; a second determination unit that, if it is determined that the extracted product does not match any of the plurality of products, determines that the product is a specific product and determines whether or not a physical model corresponding to the specific product can be generated; a machine learning model generation unit that, if it is determined that such a physical model cannot be generated, generates a machine learning model corresponding to the specific product using at least a part of the feature amount data of the plurality of products; a power consumption prediction unit that predicts the power consumption of the specific product using the machine learning model for the specific product; and an operation plan creation unit that uses data of the predicted power consumption of the specific product to create an operation plan to maintain, in a prescribed period, the power consumption of the specific product within a desired power range.
G05B 19/418 - Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
H01L 21/36 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 29/24 - Semiconductor bodies characterised by the materials of which they are formed including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups , , or
50.
METHOD FOR MANUFACTURING SULFUR MOLD AND METHOD FOR MANUFACTURING SODIUM-SULFUR BATTERY
The purpose of the present invention is to provide a method for manufacturing a sulfur mold with which it is possible to reduce the necessity of disposing an adjustment object in a mold cavity in order to adjust the size of a space in the mold cavity, and improve manufacturing efficiency. A method for manufacturing a sulfur mold according to the present invention is a method for manufacturing a sulfur mold 1002 having a predetermined shape in which a conductive material is impregnated with sulfur, which is an anode active material of a sodium-sulfur battery, and includes a step for injecting a molten sulfur 30 into a mold cavity 20 from an injector 3 connected to a mold 2 after disposing a conductive material 21 in the mold cavity 20 in the mold 2. The injection of the molten sulfur 30 by the injector 3 is performed at an injection time determined on the basis of the weight of the conductive material 21 measured before the injection of the molten sulfur 30, and at a constant injection pressure.
The present invention provides a sulfur molding production method which makes it possible to more reliably supply molten sulfur to an injector. The present invention provides a sulfur molding 1002 production method for producing a sulfur molding 1002 which has a prescribed shape and in which sulfur that is a positive electrode active material for a sodium-sulfur battery 1000 is impregnated in a conductive material 21, said production method comprising a step for, after disposing a conductive material 21 in a mold cavity 20 inside a mold 2, injecting molten sulfur 30 inside the mold cavity 20 from an injector 3 which is connected to the mold 2, wherein: the molten sulfur 30 flows through circulation piping 41 which has one end 41a and another end 41b that are connected to a melting furnace 40 that heats sulfur to generate the molten sulfur 30; and the injector 3 injects the molten sulfur 30 flowing through the circulation piping 41 into the mold cavity 20.
Provided is a method for manufacturing a sulfur mold, whereby it is possible to more reliably confirm that an inert gas-generating substance is suitably retained in the sulfur mold, and to more reliably and suitably manage the magnitude of the pressure in an anode space and a cathode space of a sodium-sulfur battery. The method for manufacturing a sulfur mold according to the present invention is for manufacturing a sulfur mold 1002 having a prescribed shape and obtained by impregnating a conductive material with sulfur which is an anode active material of a sodium-sulfur battery, the manufacturing method comprising: a step for arranging a conductive material together with an inert gas-generating substance 1012 in a mold cavity inside a mold, and then injecting molten sulfur into the mold cavity from an injector connected to the mold; and a step for imaging the sulfur mold 1002 after the injection of the molten sulfur into the mold cavity and detecting the inert gas-generating substance 1012 on the sulfur mold 1002 through image analysis.
2323 232323233-based solid solution. A surface of the alignment layer is on the side used for crystal growth and is constituted of a material having a corundum crystal structure having a larger a-axis length and/or c-axis length than sapphire. The alignment layer has a composition stable region in which the composition is stable in the thickness direction and an inclined composition region in which the composition changes in the thickness direction. The composition stable region is thicker than the inclined composition region.
C30B 25/18 - Epitaxial-layer growth characterised by the substrate
C04B 35/01 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides
C04B 35/12 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on chromium oxide
H01L 21/205 - Deposition of semiconductor materials on a substrate, e.g. epitaxial growth using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
A method for producing an acetal compound is provided with which the acetal compound can be produced in excellent yield with limited use of a catalyst. The method for producing an acetal compound according to one embodiment of the present invention comprises irradiating a reaction fluid comprising a carbonyl-group-containing compound and an alcohol compound with infrared light having a wavelength that the carbonyl-group-containing compound absorbs the infrared light, thereby reacting the carbonyl-group-containing compound with the alcohol compound.
The present invention provides an electron beam welding device comprising: a chamber for accommodating a pair of workpieces butted against each other and keeping the workpieces in a vacuum atmosphere; an electron beam radiation device for radiating an electron beam toward a groove portion of the workpieces accommodated inside the chamber; a holding device for pressing the workpieces upward from below the workpieces and holding the workpieces in a manner allowing rotation in the circumferential direction; and a cooling jig for cooling the workpieces while pressing the workpieces downward from above the workpieces and holding the workpieces in a manner allowing rotation in the circumferential direction, wherein the cooling jig comprises, inside a metal body portion, a cooling channel for circulating cooling water for cooling the workpieces, and is formed such that the ratio (S/V) of the channel surface area S (units: cm2) of the cooling channel to the volume V (units: cm3) of the body portion is between 100% and 170%.
Provided are an electron beam welding device and a sodium-sulfur battery manufacturing method that make it possible to improve cooling efficiency of a workpiece and reduce the thermal effect of electron beam welding on the workpiece. The electron beam welding device comprises: a chamber for accommodating a pair of workpieces in abutment with each other to hold the pair of workpieces in a vacuum atmosphere; an electron beam emission device for emitting an electron beam toward groove portions of the workpieces accommodated in the chamber; and a holding device for pressing the workpieces upward from below the workpieces and rotatably holding the workpieces in the circumferential direction; and a cooling jig for pressing the workpieces downward from above the workpieces and cooling the workpieces while rotatably holding the workpieces in the circumferential direction. The cooling jig comprises, in a metal body part thereof, a cooling flow path through which cooling water for cooling the workpieces circulates. The proportion of a flow path surface area S (unit: cm2) of the cooling flow path to a volume V (unit: cm3) of the body part (S/V) is 100-170%.
This method for regenerating a zeolite membrane comprises: a step (step S31) for preparing a zeolite membrane having reduced permeation performance; and a step (step S32) for bringing a hydrogen-gas-containing regeneration gas into contact with the zeolite membrane, thereby restoring the permeation performance of the zeolite membrane. Thus, the permeation performance of the zeolite membrane can be suitably restored.
The present invention provides a methane production reactor which is capable of remarkably improving the methane conversion rate and efficiently producing methane. A methane production reactor according to one embodiment of the present invention comprises a ceramic base material and a methanation reaction catalyst. The ceramic base material defines a gas flow path. The gas flow path is supplied with a starting material gas that contains carbon oxide and hydrogen. The methanation reaction catalyst can promote a reaction for producing methane. The methanation reaction catalyst is disposed so as to be able to come into contact with the starting material gas supplied to the gas flow path. The thermal conductivity of the ceramic base material is 5 W/m∙K or more. The mass of the methanation reaction catalyst per unit volume of the gas flow path is 50 g/L or more.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
Provided is a honeycomb structure equipped with a coating, the honeycomb structure having applied thereto a coating that can contribute to suppression of falling-off of a functional-material-containing layer. This honeycomb structure equipped with a coating comprises: an outer peripheral wall; a partition wall disposed on the inner-peripheral side of the outer peripheral wall, the partition wall partitioning and forming a plurality of cells that form a flow path extending from a first end surface to a second end surface; a functional-material-containing layer covering the partition wall; a first coating that covers a partition wall portion constituting the first end surface and an in-cell partition wall portion near the first end surface, said portions being part of the partition wall, and penetrates into said partition wall portions; and a second coating that covers a partition wall portion constituting the second end surface and an in-cell partition wall portion near the second end surface, said portions being part of the partition wall, and penetrates into said partition wall portions.
A system according to a first embodiment: stores, in a storage medium, data representing a first operation condition of a substrate processing apparatus provided with a substrate support before reproduction; and performs a process for determining a second operation condition of the substrate processing apparatus provided with the substrate support after reproduction, with the first operation condition represented by the data stored in the storage medium as a starting point. A system according to a second embodiment: stores, in a storage medium, log data including measurement values of each of one or more sensors provided to a substrate support; performs analysis for identifying the cause of a failure occurring in operation of the substrate processing apparatus, or performs analysis for predicting a failure that could occur within a given period in operation of the substrate processing apparatus, by using the log data; and outputs analysis result data representing a result of the analysis.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
61.
CARBON FILM COMPOSITE AND PRODUCTION METHOD FOR CARBON FILM COMPOSITE
avesdsd of the thickness of the composite layer (13) is 0.1–1.0 μm. In other words, the thickness and the variation in the thickness of the composite layer (13) are reduced, and the carbon film composite can thereby increase permeation flux.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
Provided is a reactor used for a process involving two or more elementary reactions, namely an exothermic reaction and an endothermic reaction, the reactor having excellent reaction efficiency and reduced catalyst degradation. A reactor according to an embodiment of the present invention is used in a process involving two or more elementary reactions, namely an exothermic reaction and an endothermic reaction. The reactor comprises: a gas channel into which a feedstock gas containing a first component and a second component is supplied; and a catalyst-containing part disposed so as to be capable of contacting the feedstock gas supplied to the gas channel. The catalyst-containing part includes an endothermic reaction promoting catalyst capable of promoting an endothermic reaction related to the first component and an exothermic reaction promoting catalyst capable of promoting an exothermic reaction between the reaction product of the first component and the second component. The dispersion ratio of the exothermic reaction promoting catalyst calculated in a cross-sectional analysis of the catalyst-containing part is 0.60 or more.
B01J 23/63 - Platinum group metals with rare earths or actinides
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
B01J 23/89 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with noble metals
B01J 35/50 - Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A member 10 for a semiconductor manufacturing device comprises: a first ceramic plate 21 that has a wafer mounting surface 26 on an upper surface; a second ceramic plate 22 that is disposed on a lower surface of the first ceramic plate 21; and a first amorphous layer 24 that is present between the first ceramic plate 21 and the second ceramic plate 22. The first ceramic plate 21 has low particle shedding as compared to the second ceramic plate 22.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
This member 10 for a semiconductor manufacturing device comprises: a first ceramic plate 21 having a wafer-mounting surface 26 on the upper surface thereof; a second ceramic plate 22 disposed on the lower surface of the first ceramic plate 21; and a first amorphous layer 24 present between the first ceramic plate 21 and the second ceramic plate 22. The corrosion resistance of the first ceramic plate 21 is higher than the corrosion resistance of alumina and the second ceramic plate 22.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
09 - Scientific and electric apparatus and instruments
Goods & Services
Semiconductor manufacturing machines; parts and accessories
of semiconductor manufacturing machines; laminated
semiconductor chip manufacturing machines; parts and
accessories of laminated semiconductor chip manufacturing
machines; semiconductor manufacturing equipment components,
namely, ceramic substrates for arranging and temporarily
bonding semiconductor chips and forming a redistribution
layer on a semiconductor substrate in the semiconductor
substrate fabrication process; semiconductor manufacturing
equipment components, namely, ceramic substrates for
processing and transporting semiconductor substrates in the
semiconductor substrate fabrication process; semiconductor
manufacturing equipment components, namely, ceramic
substrates used in the process of semiconductor packaging,
including fan-out wafer-level packaging (fowlp);
semiconductor manufacturing equipment components, namely,
ceramic substrates for holding semiconductor substrates in
the semiconductor substrate fabrication process; ceramic
heaters for semiconductor manufacturing equipment;
electrostatic chucks for semiconductor manufacturing
equipment. Semiconductor wafers; telecommunication machines and
apparatus; optical modulators; optical communication
devices; quantum computers; quantum dot light-emitting
diodes [QLED]; quantum dots [crystalline semi-conductor
materials]; quantum sensors [semi-conductor elements];
quantum sensors [electronic components]; electronic
components; electrical signal producing devices; wafers and
substrates for optical modulators; wafers and substrates for
optical communication devices; wafers and substrates for
quantum devices; wafers and substrates for electrical signal
producing devices; electronic control apparatus for
machines; apparatus for processing electronic information;
parts of optical modulators, optical communication devices,
quantum computers, quantum dot light-emitting diodes [QLED],
quantum dots [crystalline semi-conductor materials], quantum
sensors [semi-conductor elements], quantum sensors
[electronic components], electrical signal producing
devices, wafers and substrates for optical modulators,
wafers and substrates for optical communication devices,
wafers and substrates for quantum devices, wafers and
substrates for electrical signal producing devices,
electronic control apparatus for machines, apparatus for
processing electronic information; integrated circuits and
their parts; circuit boards; wafers and substrates for
electronic devices; surface acoustic wave filters; wafers
and substrates for surface acoustic wave filters;
light-emitting diodes; substrates for light-emitting diodes;
laser diodes; substrates for laser diodes; ceramic
semiconductor wafers; ceramic substrates for electronic
circuits used in semiconductor manufacturing processes.
69.
HONEYCOMB STRUCTURE, FORMING RAW MATERIAL COMPOSITION, AND METHOD FOR PRODUCING POROUS BODY
A honeycomb structure includes partition walls that define a plurality of cells extending from one end surface to the other end surface, wherein the partition walls include silicon carbide, silicon, and a firing aid, wherein the firing aid includes aluminum oxide, silicon oxide, and strontium oxide, and assuming a total parts by mass of the aluminum oxide, the silicon oxide, and the strontium oxide with respect to the total of 100 parts by mass of the silicon carbide and the silicon in the partition walls is T1, and a part by mass of the aluminum oxide with respect to the total of 100 parts by mass of the silicon carbide and the silicon in the partition walls is A1, 0.045≤A1/T1 is satisfied.
C04B 35/565 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxides based on carbides based on silicon carbide
B01J 27/182 - PhosphorusCompounds thereof with silicon
A method for inspecting a setter, which is disposed between a shelf board and a honeycomb formed body when the honeycomb formed body is fired, the setter including a placement surface for placing the honeycomb formed body, the method includes: a step A1 of imaging the placement surface using a 3D scanner to obtain a first image of the placement surface, wherein each pixel constituting the first image has a coordinate information and a height information; and a step B1 of determining whether or not there is a local height abnormality on the placement surface based on the coordinate information and the height information of each pixel constituting the first image of the placement surface.
An air conditioning system includes a heat pump cycle having a refrigerant pipe capable of circulating a refrigerant therethrough, and a compressor capable of compressing the refrigerant. A heating portion capable of circulating the refrigerant therethrough and capable of heating the refrigerant by electromagnetic induction is connected in the middle of the refrigerant pipe.
A Group-III element nitride substrate includes a first main surface and a second main surface facing each other, wherein a fluctuation width of a Young's modulus in a thickness direction of the Group-III element nitride substrate is 50% or less.
C30B 25/20 - Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
C30B 29/60 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
A connector, which includes a plurality of contacts and is configured to bring the plurality of contacts into contact with a plurality of electrode portions provided on a surface of a sensor element having a flat plate shape, includes a pair of housings extending in an extending direction of the plurality of contacts and configured to sandwich the sensor element. At least one housing of the pair of housings includes a plurality of protruding portions extending from one end to another end of the one housing and protruding toward the sensor element, the protruding portions being formed at predetermined intervals along a direction orthogonal to the extending direction, and the contacts are respectively provided in a plurality of grooves formed by the plurality of protruding portions.
The present invention is for stably manufacturing a joined body that constitutes a part of a battery using Na for a positive electrode and/or a negative electrode and that has excellent durability and corrosion resistance. Provided is a manufacturing method for a joined body, the method including solid-phase bonding of a ceramic component for insulating between the positive electrode and the negative electrode of the battery and a metal component on the positive-electrode side or the negative-electrode side via an Al-Si alloy-based brazing material. The solid-phase bonding includes: a step for heating, without pressurizing, a laminated part that includes the ceramic component, the Al-Si alloy-based brazing material, and a joined part of the metal component in this order, under a predetermined high vacuum atmosphere, such that the temperature of the Al-Si alloy-based brazing material rises to a prescribed holding temperature range; a step for applying a high pressure to the laminated part for a prescribed time in the lamination direction while keeping the temperature of the Al-Si alloy-based brazing material in the holding temperature range; and a step for cooling the laminated part such that the temperature of the Al-Si alloy-based brazing material falls within a prescribed time from the holding temperature range to the room temperature after the pressurization to the laminated part is stopped.
A synthetic fuel generation system 1 according to the present invention comprises: a solid oxide electrolysis cell 10 to which raw material gas 2 and raw material steam 3 are supplied; a post reactor 11 that generates a synthetic fuel 4 from generated gas 10a from the solid oxide electrolysis cell 10; and a first condenser 12 that condenses the generated gas 10a from the solid oxide electrolysis cell 10 by exchanging heat with the raw material gas 2 and the raw material steam 3 supplied to the solid oxide electrolysis cell 10.
This separation method for separating a mixed gas comprises: a step (step S11) for supplying, to a separation membrane which is an inorganic film, a mixed gas containing a first gas, a second gas, water vapor, and a third gas which is a polar gas having a lower polarity than the water vapor; and a step (step S12) for separating the first gas from the mixed gas by causing the mixed gas to permeate the separation membrane. Due to this technique, deterioration of permeation performance due to adsorption of water vapor to the separation membrane can be suppressed.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A gas separation device (3) comprises a gas supply part (36), a first separation membrane (310), and a second separation membrane (320). The gas supply part (36) supplies a mixed gas. In the first separation membrane (310), the permeability of a third gas is higher than the permeability of a first gas and a second gas. The first separation membrane (310) causes the third gas, from the mixed gas supplied from the gas supply part (36), to permeate therethrough and removes the third gas. In the second separation membrane (320), the permeability of the first gas is higher than the permeability of the second gas. The second separation membrane (320) is supplied with a first non-permeated gas, from the mixed gas, that has not permeated through the first separation membrane (310). The second separation membrane (320) cause the first gas, from the first non-permeated gas, to permeate therethrough and separates the first gas. As a result, it is possible to suppress increases in the size of facilities related to the separation of a mixed gas.
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
This carbon film composite is provided with: a porous support (11); and a carbon film (12) provided on a surface of the support (11). A carbon-rich layer (35) having a larger amount of carbon than the surrounding portions is provided inside the support (11). The carbon-rich layer (35) is disposed at a position separated from the surface of the support (11). As a result, a decrease in the permeation flux of the carbon film composite (1) can be limited while the separation coefficient thereof can be improved.
Disclosed is a solid electrolyte which can be provided at an inexpensive process cost and exhibits high ion conductivity. The solid electrolyte contains: at least one inorganic compound that is selected from the group consisting of a metal oxide, a metal halogen compound, and a metal hydroxide; a residual solvent; and a salt that contains an alkali metal or an alkaline earth metal. The inorganic compound has at least one peak that has a full width at half maximum of 0.80° or less in the X-ray diffraction pattern.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
Provided is a methane production method capable of stably and efficiently producing methane. A methane production method according to one embodiment of the present invention comprises: a step for preparing a raw material gas by adding hydrogen gas to a gas mixture containing carbon dioxide gas and oxygen gas; and a step for supplying the raw material gas to a gas flow path included in a methane production device. In the step for adding hydrogen gas to the gas mixture, the addition amount A of the hydrogen gas satisfies formula (1). (1): A = {z × (c1/100) × x} + {z × (c2/100) × y} (In formula (1), A represents the addition amount of hydrogen gas. z represents the flow rate of the gas mixture. c1 represents the concentration of oxygen in the gas mixture. c2 represents the concentration of carbon dioxide in the gas mixture. x represents 2.0. y represents a numerical value of 4.0 or more.)
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
Provided is a methane production method capable of efficiently producing methane and excellent in safety. The methane production method according to one embodiment produces methane from a raw material gas containing carbon dioxide gas, oxygen gas, and hydrogen gas. The methane production method comprises: a step of preparing the raw material gas by adding hydrogen gas to a mixed gas containing carbon dioxide gas and oxygen gas; and a step of supplying the raw material gas to a gas flow path of a methane production apparatus. In the methane production method, when the oxygen concentration is 5 vol. % or more and the temperature in the gas flow path exceeds 450°C in the raw material gas to be supplied to the gas flow path, the addition of the hydrogen gas to the mixed gas is stopped.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
Provided is a methane production reactor which can significantly improve the methane conversion rate and efficiently produce methane. A methane production reactor according to one embodiment of the present invention comprises a ceramic base material and a methanation reaction catalyst. The ceramic base material defines a gas flow path. A raw material gas containing carbon oxide and hydrogen is supplied to the gas flow path. The methanation reaction catalyst can facilitate a reaction for generating methane. The methanation reaction catalyst is disposed so as to be able to contact the raw material gas supplied to the gas flow path. The thermal conductivity of the ceramic base material is 8 W/m·K or more.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
Provided is a methane production reactor that exhibits excellent methane yield. A methane production reactor according to an embodiment of the present invention has gas flow paths to which a raw material gas containing ammonia and carbon dioxide is supplied. The methane production reactor comprises: a honeycomb-shaped base material including partition walls that define a plurality of cells, at least some of the plurality of cells including the gas flow paths; and catalyst-containing layers provided on the surfaces of the partition walls so as to face the gas flow paths, the catalyst-containing layers being capable of promoting a reaction for generating methane from the raw material gas.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
B01J 23/63 - Platinum group metals with rare earths or actinides
B01J 23/83 - Catalysts comprising metals or metal oxides or hydroxides, not provided for in group of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups with rare earths or actinides
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
A semiconductor manufacturing device member 10 includes: a first ceramic plate 21 having a wafer mounting surface 26 on the upper surface thereof; a second ceramic plate 22 arranged on the lower surface of the first ceramic plate 21; an attraction electrode 26 built in the second ceramic plate 22; and a first amorphous layer 24 present between the first ceramic plate 21 and the second ceramic plate 22. The insulation breakdown voltage of the first ceramic plate 21 is higher than the insulation breakdown voltage of the second ceramic plate 22 and is 70 kV/mm or more.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C23C 16/458 - Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Provided is a method for producing an acetal compound, with which an acetal compound can be produced at an excellent yield while suppressing use of a catalyst. In a method for producing an acetal compound according to one embodiment of the present invention, a reaction liquid containing a carbonyl group-containing compound and an alcohol compound is irradiated with infrared radiation having an absorption wavelength of the carbonyl group-containing compound, thereby causing the carbonyl group-containing compound to react with the alcohol compound.
Provided is a fuel production device that can improve the conversion rate of carbon oxide and efficiently produce a synthetic fuel. The fuel production device according to an embodiment of the present invention has a first flow path. A raw material gas containing carbon oxide and hydrogen is supplied to the first flow path. The fuel production device comprises a first catalyst layer and a second catalyst layer. The first catalyst layer is disposed facing the first flow path. The first catalyst layer includes a first catalyst capable of promoting a Fischer-Tropsch reaction. The second catalyst layer is positioned on the opposite side of the first catalyst layer to the first flow path. The second catalyst layer includes a second catalyst capable of promoting the hydrocracking reaction and/or isomerization reaction of hydrocarbon compounds produced by the Fischer-Tropsch reaction.
C10G 45/58 - Refining of hydrocarbon oils using hydrogen or hydrogen-generating compounds to change the structural skeleton of some of the hydrocarbon content without cracking the other hydrocarbons present, e.g. lowering pour pointSelective hydrocracking of normal paraffins
C10G 47/00 - Cracking of hydrocarbon oils, in the presence of hydrogen or hydrogen-generating compounds, to obtain lower boiling fractions
Provided is a fuel production device capable of efficiently producing a synthetic fuel with excellent selectivity for carbon numbers of 5 to 20. A fuel production device according to one embodiment of the present invention includes a ceramic base material and a catalyst layer. The ceramic base material defines a gas flow path. A raw material gas containing carbon oxide and hydrogen is supplied to the gas flow path. The catalyst layer is provided on a surface of the ceramic base material so as to face the gas flow path. The catalyst layer includes a first catalyst and a second catalyst. The first catalyst is capable of promoting the Fischer-Tropsch reaction. The second catalyst is capable of promoting the hydrocracking reaction and/or isomerization reaction of a hydrocarbon compound gas produced by the Fischer-Tropsch reaction.
C10G 45/58 - Refining of hydrocarbon oils using hydrogen or hydrogen-generating compounds to change the structural skeleton of some of the hydrocarbon content without cracking the other hydrocarbons present, e.g. lowering pour pointSelective hydrocracking of normal paraffins
C10G 47/00 - Cracking of hydrocarbon oils, in the presence of hydrogen or hydrogen-generating compounds, to obtain lower boiling fractions
89.
SEMICONDUCTOR MANUFACTURING DEVICE-USE MEMBER AND METHOD FOR MANUFACTURING SAME
Provided is a method for manufacturing a second semiconductor manufacturing device-use member using a first semiconductor manufacturing device-use member as a raw material. The method is for manufacturing a second semiconductor manufacturing device-use member by using a first semiconductor manufacturing device-use member provided with a first ceramic substrate that has an upper surface with a plurality of protrusions on which a wafer can be placed and that has a built-in electrode, said second semiconductor manufacturing device-use member being provided with a second ceramic substrate that has an upper surface with a plurality of protrusions on which a wafer can be placed and that has a built-in electrode. Said method comprises: a step A in which the upper surface of the first ceramic substrate is processed to form a flat surface from which the plurality of protrusions are removed; a step B1 in which the flat surface of the first ceramic substrate and a lower surface of a ceramic plate are bonded at room temperature to form a second ceramic substrate in which the first ceramic substrate and the ceramic plate are bonded; and a step C in which, before or after the execution of the step B1, a plurality of protrusions on which a wafer can be placed are formed on the upper surface of the ceramic plate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
The present invention addresses the problem of providing a semiconductor manufacturing device member capable of obtaining high electrostatic adsorption force. Provided is a semiconductor manufacturing device member which is provided with: a first ceramic part that has an upper surface including a wafer mounting surface and that has a lower surface located on the opposite side thereof from the upper surface; a second ceramic part that is joined to the lower surface of the first ceramic part; a first amorphous layer that is present at the joining interface between the first ceramic part and the second ceramic part; and an electrostatic adsorption electrode that is disposed on the first ceramic part, on the second ceramic part, or between the first ceramic part and the second ceramic part, wherein the first ceramic part has a higher relative permittivity than the second ceramic part.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C04B 37/00 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating
H02N 13/00 - Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Provided is a device for determining the feasibility of operation, based on an operation plan, of a storage battery, the device comprising: a simulation unit for simulating at least one of the state of charge, temperature, and charging/discharging current of the storage battery when a charging/discharging operation is performed in the storage battery according to the contents of the operation plan; a determination unit for determining the feasibility of operation of the storage battery according to the operation plan, using, as determination target indexes, a result of the simulation and a setting value of a charging/discharging output for each unit time segment described in the operation plan; and a modification unit capable of modifying the operation plan when it is determined that the operation is not feasible. When at least one of the determination target indexes does not fall within an allowable range, it is determined that the operation is infeasible, and the operation plan can be modified by adjusting the setting value of the charge/discharge output for each unit time segment in the operation plan determined to be infeasible. When the operation plan is modified, the operation feasibility is determined for the modified operation plan.
Provided is a halide-based solid electrolyte which exhibits high lithium ion conductivity at room temperature. This solid electrolyte contains Li, Mα, Mβ, and Cl, wherein Mαis at least one element that is selected from the group consisting of Zn, Mg, Ca, Sr, and Ba, and Mβ is at least one element that is selected from the group consisting of Al, Ga, Bi, Er, Ge, and Zr. This solid electrolyte has a crystal structure that belongs to an orthorhombic crystal of the space group Pnma.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
Provided is an electrode-embedded ceramic structure comprising: a ceramic shaft having an electrode provided on an outer peripheral section thereof; and a ceramic cylinder that houses the ceramic shaft and that is joined with the ceramic shaft. In the electrode-embedded ceramic structure, the relative density of a first ceramic constituting the ceramic shaft and the relative density of a second ceramic constituting the ceramic cylinder are different.
C04B 35/10 - Shaped ceramic products characterised by their compositionCeramic compositionsProcessing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxides based on aluminium oxide
H05B 3/18 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
H05B 3/48 - Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material
According to the present invention, an electrolysis cell (1) is provided with a hydrogen electrode layer (5), an electrolyte layer (6), an intermediate layer (7), and a reaction prevention layer (8). The electrolyte layer (6) is composed of YSZ. The reaction prevention layer (8) is composed of GDC. The intermediate layer (7) has a first intermediate layer (71) that is formed on the electrolyte layer (6), and a second intermediate layer (72) that is sandwiched between the first intermediate layer (71) and the reaction prevention layer (8). Each of the first intermediate layer (71) and the second intermediate layer (72) is composed of YSZ and GDC. In the first intermediate layer (71), the Zr content is higher than the cerium content. In the second intermediate layer (72), the Zr content is equal to or less than the Ce content. When the Gd content is subjected to line analysis along the thickness direction of the intermediate layer (7), the position at which the highest Gd content is acquired is present in the first intermediate layer (71).
Disclosed is a solid electrolyte that exhibits high ion conductivity and that can be provided at an inexpensive process cost. The solid electrolyte comprises: at least one inorganic compound selected from the group consisting of metal oxides, metal hydrogen compounds, and metal hydroxides; residual solvent; and a salt containing an alkali metal or an alkaline earth metal. The x-ray diffraction pattern of the inorganic compound has at least one peak having a full width at half maximum of no greater than 0.80°.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
A composite substrate according to the present invention comprises: a functional substrate that is configured to include at least one of InP and a crystal of a material which can be formed on an InP crystal by epitaxial growth; and a support substrate that comprises a semiconductor material and is bonded to the functional substrate to support the functional substrate. The functional substrate has: a first layer; and a second layer that is disposed on the side closer to the support substrate than the first layer and comprises an amorphous body containing a rare gas element. The support substrate has: a first support layer; a second support layer that is disposed on the side closer to the functional substrate than the first support layer and comprises an amorphous body of a semiconductor material containing a rare gas element; and a bonding layer that is in contact with the functional substrate and comprises an amorphous body of a semiconductor material.
H01L 21/302 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
An electrochemical cell includes a gas container and a cell body portion. The gas container includes a metal support having a plurality of communication holes formed through a main surface thereof, a gas supply hole, and a gas discharge hole, a flow path member defining an internal space between the metal support and the flow path member, and a welded portion sealing a gap between the metal support and the flow path member. The internal space includes a gas supply chamber in communication with the gas supply hole, a gas discharge chamber in communication with the gas discharge hole, and a gas distribution chamber disposed between the gas supply chamber and the gas discharge chamber. When viewed in a plan view of the main surface, the welded portion includes a narrowing portion for dividing the gas distribution chamber from the gas supply chamber or the gas discharge chamber.
An electrochemical cell includes a metal support having a plurality of connecting holes formed in a principal surface and a cell body disposed on the principal surface. The cell body has a gas diffusion layer disposed on the principal surface, a first electrode layer disposed on the gas diffusion layer, a second electrode layer and an electrolyte layer disposed between the first electrode layer and the second electrode layer. The gas diffusion layer has a body portion located in a gap between the metal support and the first electrode layer and a protruding portion protruding from the body portion to the connecting holes. The protruding portion covers a portion of an inner circumferential surface of the connecting hole.
A wafer placement table includes a ceramic plate; an electrically conductive plate joined to a bottom surface of the ceramic plate; a ceramic plate penetrating part extending through the ceramic plate; an electrically insulating gas passage plug provided at the ceramic plate penetrating part; a gas introduction passage provided at least inside the electrically conductive plate; and an electrically conductive gas passage part provided in the gas introduction passage, the electrically conductive gas passage part being in contact with a bottom surface of the electrically insulating gas passage plug, the electrically conductive gas passage part being electrically continuous with the electrically conductive plate, the electrically conductive gas passage part allowing gas to pass between the electrically insulating gas passage plug and the gas introduction passage, wherein the electrically conductive gas passage part has a plate spring that presses the electrically insulating gas passage plug upward with elastic force.
