A sensor element includes first to third chambers communicating sequentially from a gas inlet, an adjustment pump cell pumps oxygen into the first chamber so that an H/C component is oxidized, a first measurement pump cell pumps out oxygen from the second chamber so that all H2O and CO2 contained in the measurement gas are reduced, a second measurement pump cell pumps oxygen into the third chamber to selectively oxidize H2 generated by reduction, a concentration of H2O is identified from values of currents generated by pumping-in by the adjustment pump cell and the second measurement pump cell, and a concentration of CO2 is identified based on the identified concentration of H2O, the value of the current generated by pumping-in by the adjustment pump cell, and a value of a current generated by pumping-out by the first measurement pump cell.
An adjustment pump cell performs first pumping-out operation to pump out oxygen so that all H2O and CO2 in a measurement gas introduced into a first chamber are reduced, a first measurement pump cell selectively oxidizes H2 in a second chamber, a second measurement pump cell oxidizes CO in a third chamber, a concentration of H2O and CO2 are identified based on currents generated in respective oxidization, the adjustment pump cell can further perform second pumping-out operation to pump out oxygen from the first chamber to the extent that H2O and CO2 are not reduced in the middle of the first pumping-out operation, and reduction of H2O and CO2 in the first chamber is interrupted upon start of the second pumping-out operation, so that H2O and CO2 generated in the second chamber or the third chamber are emitted outside an element.
G01N 27/407 - Cells and probes with solid electrolytes for investigating or analysing gases
G01N 27/27 - Association of two or more measuring systems or cells, each measuring a different parameter, where the measurement results may be either used independently, the systems or cells being physically associated, or combined to produce a value for a further parameter
G01N 27/30 - Electrodes, e.g. test electrodesHalf-cells
G01N 27/60 - Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables
A member for a semiconductor manufacturing equipment includes a ceramic substrate, wherein the ceramic substrate includes a central portion with a central portion upper surface on which a wafer is to be placed, and an outer peripheral portion with an outer peripheral portion upper surface on which a focus ring is to be placed, the outer peripheral portion being located lower than the central portion upper surface, wherein the central portion includes a central portion plug placement hole that vertically penetrates the central portion, and a central portion plug that is embedded in the central portion plug placement hole, and wherein the outer peripheral portion includes an outer peripheral portion plug placement hole that vertically penetrates the outer peripheral portion, and an outer peripheral portion plug embedded in the outer peripheral portion plug placement hole and having a lower relative permittivity than the central portion plug.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
Provided is a ceramic heater capable of improving heat uniformity in the central part of an inner zone. This ceramic heater comprises: a ceramic plate including an inner zone and an outer zone; a ceramic shaft; an inner zone heater circuit; an outer zone heater circuit; a pair of first power supply terminals provided to the central part of the inner zone; a pair of second power supply terminals provided to the central part of the inner zone; and at least a pair of jumpers embedded in the inner zone. The inner zone heater circuit is provided in a manner so as to start from one of the first power supply terminals and meanderingly reach the other of the first power terminals by one stroke. In the central part of the inner zone: the inner zone heater circuit, which starts from the one of the first power supply terminals, is provided in a manner so as to meander while circumventing a prescribed position; and the total of the opening angles formed by one or more pairs of tangential lines drawn from the center of the ceramic plate in a manner so as to define one or more openings in a circumvention part of the inner zone heater circuit is 60° or less.
A separation membrane composite (1) comprises: a porous support (11); a first separation layer (13) that is in contact with the surface of the support (11) and is a membrane composed of zeolite; and a second separation layer (14) that is in contact with the surface of the first separation layer (13) on the side opposite the support (11) and that is an amorphous membrane in which zeolite fine particles (141) are mixed. Due to this configuration, it is possible to prevent a decrease in separation performance when the separation membrane composite (1) is used under high pressure.
B01D 69/00 - Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or propertiesManufacturing processes specially adapted therefor
C01B 39/02 - Crystalline aluminosilicate zeolitesIsomorphous compounds thereofDirect preparation thereofPreparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactantsAfter-treatment thereof
C01B 39/04 - Crystalline aluminosilicate zeolitesIsomorphous compounds thereofDirect preparation thereofPreparation thereof starting from a reaction mixture containing a crystalline zeolite of another type, or from preformed reactantsAfter-treatment thereof using at least one organic template directing agent, e.g. an ionic quaternary ammonium compound or an aminated compound
This ceramic substrate (100) has a first surface (SF1) and a second surface (SF2) opposite the first surface (SF1) in the thickness direction, and includes a through-hole between the first surface (SF1) and the second surface (SF2). A conductor portion (200) passes through the through-hole, and is made of a sintered material containing a sintered metal. A magnetic body portion (300) surrounds the conductor portion (200) in the through-hole, is made of ceramic, and is joined to each of the ceramic substrate (100) and the conductor portion (200) without interposing an organic material therebetween. Between the first surface (SF1) and the second surface (SF2) in at least one cross-sectional view along the thickness direction, the maximum rectangular area included in the conductor part (200) and having a side along the thickness direction has an area ratio of 50-80% with respect to the area of the conductor part (200).
A vehicle air conditioning system includes: an air conditioning duct through which air flows; a humidity controlling device disposed in the air conditioning duct; a heat pump cycle including a condenser disposed in the air conditioning duct on a downstream side of the humidity controlling device; and a control unit for controlling the humidity controlling device and the heat pump cycle in response to an operation mode. The control unit comprises a warm-up mode in which the air is heated by the humidity controlling device at the start of a heating operation mode of the heat pump cycle.
An air conditioning system including a heat pump cycle having a refrigerant pipe capable of circulating a refrigerant therethrough, and a compressor capable of compressing the refrigerant. The air conditioning system is provided with at least one heating portion capable of heating the refrigerant in the refrigerant pipe on an upstream side, a downstream side, or both of the upstream side and the downstream side of the compressor based on a flow direction of the refrigerant. The heating portion includes: a honeycomb structure having an outer peripheral wall and partition walls disposed on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face, at least the partition walls being made of a material having a PTC property.
This honeycomb structure has a plurality of cell channels (cells 108) that pass through the interior of the honeycomb structure 100 and are partitioned by a partition wall 112. The partition wall 112 contains a carbon dioxide adsorbent, a water-resistance-imparting agent, and an organic binder.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01J 20/28 - Solid sorbent compositions or filter aid compositionsSorbents for chromatographyProcesses for preparing, regenerating or reactivating thereof characterised by their form or physical properties
A heater element 100 comprises: a honeycomb structure 10 having an outer peripheral wall 11 and a partition wall 14 that is disposed inside the outer peripheral wall 11 and demarcates a plurality of cells 13 serving as flow paths extending from a first end surface 12a to a second end surface 12b; a pair of electrodes 20a, 20b provided to the first end surface 12a and the second end surface 12b; and terminals 30 provided to at least a part of the pair of electrodes 20a, 20b. In the heater element 100, the ratio of the thermal expansion coefficient of the terminals 30 to the thermal expansion coefficient of the honeycomb structure 10 is 1.00-1.38, and the ratio of the thickness T of the terminals 30 to the length from the first end surface 12a to the second end surface 12b of the honeycomb structure 10 is 0.03-0.20.
Provided is a manganese zinc secondary battery that makes it possible to extend cycle service life. A zinc secondary battery according to the present invention comprises: a positive electrode that includes a positive electrode active material layer containing manganese dioxide; a positive electrode electrolyte in which the positive electrode is immersed; a negative electrode that includes a negative electrode active material layer containing at least one substance selected from the group consisting of zinc, zinc oxide, zinc alloys, and zinc compounds; a negative electrode electrolyte in which the negative electrode is immersed; and a layered double hydroxide (LDH) separator including a hydroxide-ion-conductive layered compound that is a LDH and/or a LDH-like compound, the LDH separator isolating the positive electrode and the positive electrode electrolyte from the negative electrode and the negative electrode electrolyte in a manner that allows conduction of hydroxide ions. The zinc secondary battery includes a zinc ion scavenger at a position where it is possible to capture zinc ions that have been eluted from the negative electrode and reached the positive electrode electrolyte.
H01M 50/446 - Composite material consisting of a mixture of organic and inorganic materials
H01M 50/454 - Separators, membranes or diaphragms characterised by the material having a layered structure comprising a non-fibrous layer and a fibrous layer superimposed on one another
Provided is a membrane reactor capable of improving the production efficiency of a target compound. A membrane reactor according to an embodiment of the present invention has a flow passage. A fluid can pass through the flow passage. This membrane reactor comprises a catalyst, a separation membrane, and a current-changing unit. The catalyst is disposed so as to be able to contact the fluid passing through the flow passage. The catalyst can promote the conversion reaction of a raw material component contained in the fluid. The separation membrane can transmit a reaction product generated by the conversion reaction of the raw material component. The current-changing unit is arranged in at least a part of the flow passage. The current-changing unit changes a part of the flow of the fluid passing through the flow passage toward the separation membrane.
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
C07C 29/152 - Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by reduction of oxides of carbon exclusively with hydrogen or hydrogen-containing gases characterised by the reactor used
The present invention provides a member for a semiconductor manufacturing apparatus having a wafer mounting surface which is less likely to generate particles even when a wafer slides thereon. A member for a semiconductor manufacturing apparatus includes a ceramic substrate having an upper surface with a plurality of protrusions for mounting a wafer, each of the plurality of protrusions having a top end surface, at least one of the top end surfaces having a patterned uneven shape.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
16.
HEAT DISSIPATION SUBSTRATE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING HEAT DISSIPATION SUBSTRATE
A heat dissipation plate (11) contains copper and at least one high melting-point metal selected from the group consisting of tungsten and molybdenum, and is made of a sintered body. A first insulating layer (21) has a thickness smaller than the thickness of the heat dissipation plate (11), forms a first bonding surface (SJ1) by being bonded to the heat dissipation plate (11), and is made of ceramic. A conductor layer (31), on which an electronic component (290) is to be mounted: has a thickness smaller than the thickness of the heat dissipation plate (11); forms a second bonding surface (SJ2) by being bonded to the first insulating layer (21); has a mounting surface (SM) which is opposite to the second bonding surface (SJ2) and on which the electronic component (290) is to be mounted; is electrically insulated from the heat dissipation plate (11) by the first insulating layer (21); contains copper and at least one high melting-point metal selected from the group consisting of tungsten and molybdenum; and is made of a sintered body.
An internal electrode layer 40 contains copper and at least one high melting point metal selected from the group consisting of tungsten and molybdenum. A ceramic base portion 30 is joined to a first surface SF1 and a second surface SF2 of the internal electrode layer 40, and contains alumina as a main component. In at least one cross-sectional view parallel to the thickness direction, the first surface SF1 of the internal electrode layer 40 has a first copper section which comprises copper and a first high melting point metal section which comprises the at least one high melting point metal. In a projection of the first surface SF1 onto a straight line perpendicular to the thickness direction, the first high melting point metal section accounts for a first proportion. The second surface SF2 of the internal electrode layer 40 has a second copper section which comprises copper and a second high melting point metal section which comprises the at least one high melting point metal. In a projection of the second surface SF2 onto a straight line perpendicular to the thickness direction, the second high melting point metal section accounts for a second proportion. The first proportion is at least 10% greater than the second proportion.
H05K 1/09 - Use of materials for the metallic pattern
B22F 1/00 - Metallic powderTreatment of metallic powder, e.g. to facilitate working or to improve properties
B22F 5/00 - Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
B22F 7/04 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite layers with one or more layers not made from powder, e.g. made from solid metal
B22F 7/06 - Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting of composite workpieces or articles from parts, e.g. to form tipped tools
C22C 1/05 - Mixtures of metal powder with non-metallic powder
A method of capturing an acid gas includes: an adsorption step; a desorption step; and a cooling step in the stated order. In the adsorption step, an acid gas is caused to be adsorbed to an acid gas adsorption material by supplying a gas to be treated containing the acid gas to an acid gas adsorption device including the acid gas adsorption material. In the desorption step, the acid gas is caused to be desorbed from the acid gas adsorption material by heating the acid gas adsorption device. In the cooling step, the acid gas adsorption device is cooled with a cooling medium having a temperature less than an outside air temperature.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
A method of capturing an acid gas includes an adsorption step and a desorption step. In the desorption step, the acid gas is caused to be desorbed from the acid gas adsorption material by heating the acid gas adsorption device. The desorption step includes a first desorption step and a second desorption step after at least the first desorption step. In the first desorption step, a first desorption gas is supplied to the acid gas adsorption device so that an acid gas desorbed from the acid gas adsorption material is captured together with the first desorption gas. In the second desorption step, a second desorption gas with lower humidity than humidity of the first desorption gas is supplied to the acid gas adsorption device so that an acid gas desorbed from the acid gas adsorption material is captured together with the second desorption gas.
An acid gas capture system includes: a plurality of acid gas adsorption devices each including an acid gas adsorption material; and a fluid supply line. The fluid supply line allows distribution and supply of a fluid to the plurality of acid gas adsorption devices. The fluid supply line includes a branching portion and a plurality of flow dividing portions. The plurality of flow dividing portions each connect the branching portion and each of the plurality of acid gas adsorption devices to each other. A resistor is provided to each of the plurality of flow dividing portions.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
The present invention provides a ceramic heater capable of achieving improved heat uniformity by suppressing the generation of cool spots even in a central region of a plate with four or more bottomed holes. This ceramic heater comprises: a disc-shaped ceramic plate with a diameter of 220 mm or more having a first surface on which a wafer is placed and a second surface opposite the first surface; at least one heater circuit embedded in the ceramic plate; four or more bottomed holes provided from the second surface in the direction of the thickness of the ceramic plate, within a central region within a radius of 25 mm from the center of the ceramic plate; and at least one pair of heater elements inserted into at least two of the bottomed holes and electrically connected to the heater circuit. The heater circuit includes a heater main section which is disposed so as to be capable of heating the region on the outside of the central region and which includes a resistance heating element in the form of a coil or the like, and a heater strand section which is disposed so as to be capable of heating the central region and which is formed from a resistance heating element in the form of a strand rather than a coil.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/324 - Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
A member for a semiconductor manufacturing equipment includes a ceramic substrate, wherein the ceramic substrate includes an upper surface having a plurality of protrusions for placing a wafer, wherein each of the plurality of protrusions has an upper end surface, and at least one of the upper end surfaces has a patterned concave-convex shape.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
24.
ACID GAS ADSORPTION DEVICE AND METHOD OF PRODUCING ACID GAS ADSORPTION DEVICE
A acid gas adsorption device includes acid gas-adsorbable particles and an organic binder. The acid gas-adsorbable particles are each capable of adsorbing an acid gas. The organic binder is capable of binding the acid gas-adsorbable particles. The organic binder is soluble in an aprotic polar solvent and is substantially insoluble in a protic polar solvent.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
Provided is a ceramic susceptor in which a terminal rod has been brazed with high joint strength, and in which the risk of cracking or breakage is reduced. This ceramic susceptor is provided with a ceramic plate having a first surface and a second surface, an internal electrode embedded into the plate, a bulk electrode embedded in the plate so as to connect to the internal electrode, a terminal hole provided so as to reach from the second surface of the plate to the bulk electrode, a metal-containing member embedded in the periphery of the terminal hole in the plate, and a terminal rod that is inserted into the terminal hole and has one end connected to the internal electrode via the bulk electrode. The bulk electrode is exposed at the bottom of the terminal hole, and a metal constituting the metal-containing member is exposed at a side surface of the terminal hole or the like. The terminal rod is brazed to the exposed portion of the bulk electrode, and the terminal rod is brazed to the exposed metal portion of the metal-containing member. Between brazed parts formed at the exposed metal portion, there is an unjoined part at which no brazing with the terminal rod has been formed.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
An LED display device (1) comprises: an LED display layer (10) that has surfaces (10A, 10B) positioned on mutually opposite sides in the thickness direction, the LED display layer (10) including a plurality of LED elements (11) disposed along one of the surfaces; a photovoltaic layer (20) that is disposed side by side with one of the surfaces of the LED display layer (10); and a battery unit (30) that is electrically connected to the LED display layer (10) and the photovoltaic layer (20), the battery unit (30) including a plurality of batteries (31). Power generated in the photovoltaic layer (20) is stored in the battery unit (30), and the LED display layer (10) is driven by the power stored in the battery unit (30).
G09F 9/33 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
G09F 9/00 - Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
A honeycomb structure body having a partition wall surrounding cells which serve as fluid through channels extending from a first end face to a second end face, wherein
the partition wall is a porous body having pores that communicate adjacent cells separated by the partition wall are formed,
a ratio (L/T) of a through channel length L (μm) of the pore in the thickness direction of the partition wall to a thickness T (μm) of the partition wall is defined as a bending degree A,
the partition wall constituting the honeycomb structure body has an average bending degree AAve, which is an average value of the bending degree A, of 1.10 to 1.40, and
a value X (X=AAve/B2) obtained by dividing the average bending degree AAve by the square of a deviation bending degree B, which is a deviation of the bending degree A, is 100 to 300.
F01N 3/022 - Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for cooling, or for removing solid constituents of, exhaust by means of filters characterised by specially adapted filtering structure, e.g. honeycomb, mesh or fibrous
An acid gas adsorption device includes a first adsorption portion and a second adsorption portion. The second adsorption portion is arranged on a downstream side of the first adsorption portion in a direction of passage of a target gas to be treated so as to be spaced apart from the first adsorption portion. The first adsorption portion includes first flow passages, and the second adsorption portion includes second flow passages. A first desorption gas flow passage communicating with the first flow passages and the second flow passages is defined between the first adsorption portion and the second adsorption portion in the direction of passage of the target gas to be treated.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
29.
DEHUMIDIFICATION DEVICE, HEATER ELEMENT FOR DEHUMIDIFICATION DEVICES, AND VEHICLE INTERIOR DEHUMIDIFICATION SYSTEM
A dehumidification device according to an embodiment may include: a heater element including a honeycomb structure having an outer peripheral wall and partition walls provided on an inner side of the outer peripheral wall, the partition walls defining a plurality of cells, each of the cells extending from a first end face to a second end face of the honeycomb structure to form a flow path, at least the partition walls being made of a material having a PTC property, and a pair of electrodes provided on the honeycomb structure; and a dehumidifying material-containing layer provided on surfaces of the partition walls, the dehumidifying material-containing layer containing a dehumidifying material having a water release temperature of 30 to 70° C.
H05B 3/12 - Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
30.
GAS SENSOR, AND CONCENTRATION MEASUREMENT METHOD USING GAS SENSOR
A sensor element includes: first to third chambers communicating sequentially from a gas inlet; and a heater performing heating so that a temperature is highest near the first chamber, a first adjustment pump cell pumps oxygen out of a measurement gas introduced into the first chamber to the extent that H2O and CO2 are not decomposed, a second adjustment pump cell pumps out oxygen from the second chamber so that all H2O and CO2 are reduced, a first measurement pump cell pumps oxygen into the third chamber to selectively oxidize H2 near the first measurement electrode, a second measurement pump cell pumps oxygen into the third chamber to oxidize H2 and CO near the second measurement electrode, concentrations of H2O and CO2 are identified from values of currents generated by pumping-in by these measurement pump cells.
A sensor element includes: first to third chambers communicating sequentially from a gas inlet; and a heater performing heating so that a temperature is highest near the first chamber, an adjustment pump cell pumps oxygen out of a measurement gas introduced into the first chamber to the extent that H2O and CO2 are not decomposed, a first measurement pump cell pumps out oxygen from the second chamber so that all H2O and CO2 contained in the measurement gas are reduced, a second measurement pump cell pumps oxygen into the third chamber to selectively oxidize H2 generated by reduction, a concentration of H2O is identified from a value of a current generated by pumping-in by the second measurement pump cell, and a concentration of CO2 is identified based on the identified concentration of H2O and a value of a current generated by pumping-out by the first measurement pump cell.
A sensor module (1) comprises: a wiring board (10) including a first mounting surface (11) and a second mounting surface (12); a sensor (20) disposed on the first mounting surface (11); a wireless communication module (30) disposed on the first mounting surface (11) and electrically connected to the sensor (20); and a secondary battery (60) disposed on the second mounting surface (12). The secondary battery (60) includes: a separator (621); a positive electrode layer (622) and a negative electrode layer (623) that are disposed so as to sandwich the separator (621); an electrolytic solution (626) that is impregnated into the separator (621), the positive electrode layer (622), and the negative electrode layer (623); and an exterior material (600) that accommodates the separator (621), the positive electrode layer (622), the negative electrode layer (623), and the electrolytic solution (626). At least one of the positive electrode layer (622) and the negative electrode layer (623) is a sintered electrode layer, which is an electrode layer composed of a sintered body.
H01M 50/202 - Casings or frames around the primary casing of a single cell or a single battery
H01M 50/247 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders specially adapted for portable devices, e.g. mobile phones, computers, hand tools or pacemakers
H01M 50/249 - MountingsSecondary casings or framesRacks, modules or packsSuspension devicesShock absorbersTransport or carrying devicesHolders specially adapted for aircraft or vehicles, e.g. cars or trains
The present invention provides a reactor comprising a plurality of square-column honeycomb structures 10 having outer perimeter walls 11 and partition walls 15 laid out on the inner side of the outer perimeter walls 11 to partition, and thus form, a plurality of cells 14 which extend from an inlet end face 12 to an outlet end face 13 and which allow circulation of a process gas containing a gas to be trapped, wherein the outer perimeter walls 11 parallel to the direction in which the cells 14 of the plurality of square-column honeycomb structures 10 extend are arranged to be in direct or indirect contact with each other. In a cross section orthogonal to the direction in which the cells 14 extend, a peripheral region surrounding one or more square-column honeycomb structures 10 located in a central region C has one or more square-column honeycomb structures 10 that undergo less pressure loss when the process gas is circulated through the one or more square-column honeycomb structures 10 as compared to the one or more square-column honeycomb structures 10 in the central region C.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
An electrolytic cell (1) comprises a metal support (10), a cell body (20), and a seal part (30). The metal support (10) has a recess (13) formed in a first main surface (11) and a plurality of through holes (16) formed in the bottom surface (14) of the recess (13). The cell body (20) is positioned on the bottom surface of the recess (13). The seal part (30) has a first portion (31) that is joined to an inner surface (15) of the recess (13) and a side surface (23) of the cell body (20), and a second portion (32) that is positioned on the first section (31) and is joined to the first main surface (11) of the metal support (10) and the upper surface (21) of the cell body (20).
A flow path structure according to the present invention comprises a first substrate, a second substrate, and a spacer. The first substrate has a gas permeation section. The gas permeation section is a section that allows the permeation of a gas. The second substrate has a protrusion. The protrusion protrudes towards the first substrate. The spacer is positioned between the protrusion and the first substrate. The spacer is configured so as to form a space between the protrusion and the first substrate.
This composite substrate includes: a functional substrate made of a functional material; and a support substrate made of a semiconductor material and bonded to the functional substrate to support the functional substrate. The functional substrate includes a first layer, and a second layer disposed closer to the support substrate than the first layer, and made of an amorphous body containing a rare gas. The support substrate includes: a first support layer; a second support layer disposed closer to the functional substrate than the first support layer, and made of an amorphous body of the semiconductor material containing the rare gas; and a bonding layer in contact with the functional substrate, and made of an amorphous body of the semiconductor material.
H03H 9/25 - Constructional features of resonators using surface acoustic waves
B23K 20/00 - Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H03H 3/08 - Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
This blood glucose level measurement device comprises: a sensor unit that measures the blood glucose level of a user; a communication unit that transmits, to the outside, data representing the blood glucose level measured by the sensor unit; a flexible, sheet-shaped battery that supplies power to the sensor unit and the communication unit; a flexible, plate-shaped circuit unit that controls the operation of the communication unit; and a mounting unit that is configured to be mounted on the body of the user. The peak current of the battery is 20 mA or more.
A61B 5/1473 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using chemical or electrochemical methods, e.g. by polarographic means invasive, e.g. introduced into the body by a catheter
A61B 5/1486 - Measuring characteristics of blood in vivo, e.g. gas concentration or pH-value using chemical or electrochemical methods, e.g. by polarographic means using enzyme electrodes, e.g. with immobilised oxidase
39.
ELECTRICITY STORAGE DEVICE AND BATTERY DETERIORATION STATE ESTIMATION METHOD
This electricity storage device comprises: a chargeable/dischargeable secondary battery; a control unit that controls charging/discharging of the secondary battery; and a storage unit that stores deterioration characteristic information relating to the deterioration characteristics of the secondary battery. The secondary battery is a nickel-zinc secondary battery in which a discharge depth and a capacity deterioration rate per charge/discharge are in a predetermined linear relationship. The storage unit stores information indicating the linear relationship as the deterioration characteristic information. The control unit estimates the deterioration state of the secondary battery on the basis of the number of charge/discharge times for each discharge depth of the secondary battery and the deterioration characteristic information stored in the storage unit.
H02J 7/00 - Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
40.
GAS DISTRIBUTION CONTAINER AND METAL-SUPPORTED ELECTROCHEMICAL CELL
A gas distribution container (3) comprises: a metal support body (10); an interconnector (20); a first gas flow path member (30) that is positioned in a gas distribution space (3a) between the metal support body (10) and the interconnector (20), and that forms a raw material gas flow path (32); and a first non-vitreous bonding part (C1) that is constituted by a non-vitreous material, and bonds the metal support body (10) and the first gas flow path member (30).
C25B 9/00 - Cells or assemblies of cellsConstructional parts of cellsAssemblies of constructional parts, e.g. electrode-diaphragm assembliesProcess-related cell features
A member for semiconductor manufacturing apparatus includes a first ceramic plate having a wafer placement surface on its upper surface and a built-in electrode; a second ceramic plate disposed on a lower surface side of the first ceramic plate; a cooling plate disposed on a lower surface side of the second ceramic plate; a first bonding layer made of metal, which is used as an RF electrode and configured to bond the lower surface of the first ceramic plate and an upper surface of the second ceramic plate together; and a second bonding layer made of metal or inorganic composition configured to bond the lower surface of the second ceramic plate and an upper surface of the cooling plate together.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A member for a semiconductor manufacturing equipment, comprising: a dielectric substrate having an upper surface and an opposed lower surface, a plug placement hole vertically penetrating the substrate, a plug embedded in the plug placement hole and having upper and lower surfaces, a conductive base plate bonded to the lower surface of the substrate via a bonding layer, and a gas supply path passing through the base plate and the bonding layer to supply gas to the plug. The plug is composed of a dielectric material and includes a dense portion, a gas passage that has a relative permittivity lower than that of the dense portion and that penetrates the plug to allow the gas to flow, and a voltage drop promoting portion that has a lower relative permittivity than that of the dense portion and that does not constitute a passage for the gas to flow.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed, and a lower surface; a plug placement hole; a dielectric plug embedded in the plug placement hole; a film covering at least a part of the lower surface of the dielectric plug and having a volume resistivity lower than that of the dielectric plug; a conductive base plate bonded to the lower surface of the ceramic substrate via a resin adhesive layer, a gas passage that passes through the base plate and the resin adhesive layer to supply gas to the to the gas passage portion of the dielectric plug, and a conductive connecting portion provided in the gas passage and having an upper end electrically connected to the film and a lower end electrically connected to the base plate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
44.
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. When “n” peak wavenumbers, which are obtained by measuring peak wavenumbers corresponding to an E2H phonon mode at intervals of 5 μm on a straight line from a position of a center of mass of the first surface to a position of a center of mass of the second surface in a range of from a site inward from the surface of the first surface by 5 μm to a site inward from the second surface by 5 μm, are represented by B1 to Bn from a side closer to the first surface where “n” represents the number of the measured peak wavenumbers, a difference (Bmax−Bmin) between a maximum peak wavenumber Bmax and a minimum peak wavenumber Bmin out of the “n” measured values is 2.0 cm−1 or less.
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
A member for a semiconductor manufacturing device according to the present invention comprises: a ceramic substrate having an upper surface for mounting a wafer and a lower surface on the opposite side from the upper surface; a plug arrangement hole penetrating the ceramic substrate in the vertical direction; a dielectric plug embedded in the plug arrangement hole, the dielectric plug having a lower surface and a gas passage part penetrating the dielectric plug; a film that has a volume resistivity lower than that of the dielectric plug and covers at least a portion of the lower surface of the dielectric plug; a conductive base plate adhered to the lower surface of the ceramic substrate via a resin adhesive layer; a gas passage for supplying gas to the gas passage part of the dielectric plug through the base plate and the resin adhesive layer; and a conductive connection part that is provided in the gas passage, and has an upper end electrically connected to the film and a lower end electrically connected to the base plate. At least a portion of the film covering the lower surface of the dielectric plug is in contact with the resin adhesive layer.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A wafer placement table 10 comprises: a first ceramic plate 21 having a wafer placement surface 22 on an upper surface 21a and having an electrostatic electrode 23 built therein; a second ceramic plate 26 disposed on a lower surface 21b side of the first ceramic plate 21; a cooling plate 30 disposed on a lower surface 26b side of the second ceramic plate 26; a first bonding layer 41 that is made of metal, bonds the lower surface 21b of the first ceramic plate 21 and an upper surface 26a of the second ceramic plate 26, and is used as an RF electrode; and a second bonding layer 42 that is made of metal or an inorganic composition and bonds the lower surface 26b of the second ceramic plate 26 and an upper surface 30a of the cooling plate 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
47.
SOLID ELECTROLYTE, PRODUCTION METHOD FOR SOLID ELECTROLYTE, AND BATTERY
A solid electrolyte according to the present invention includes a first element group that is one or more alkali metal elements selected from the group that consists of Li, Na, and K, a second element group that is one or more elements that become a trivalent positive ion selected from among metal elements and metalloid elements, a third element group that is one or more halogen elements selected from the group that consists of F, Cl, Br, and I, and hydroxyl groups.
H01B 1/06 - Conductors or conductive bodies characterised by the conductive materialsSelection of materials as conductors mainly consisting of other non-metallic substances
A member for a semiconductor manufacturing equipment, comprising: a ceramic substrate having an upper surface on which a wafer is to be placed and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate and comprises a tapered inner peripheral surface in which an area of an upper opening is larger than an area of a lower opening; a ceramic plug comprising a dense outer peripheral surface and a gas passage penetrating the plug, the ceramic plug being embedded such that the dense outer peripheral surface of the plug is directly fitted to the inner peripheral surface of the plug placement hole; a conductive base plate bonded to the lower surface of the ceramic substrate via a bonding layer; and a gas supply path that passes through the base plate and the bonding layer to supply gas to the gas passage of the ceramic plug.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A wafer placement table includes: a first conductive layer; a second conductive layer different in height from the first conductive layer; and a connector that electrically connect the first conductive layer and the second conductive layer, inside a ceramic plate having a wafer placement surface on its upper surface. The first conductive layer, the second conductive layer and the connector are formed in a seamless one-piece structure.
Provided is a member for a semiconductor manufacturing apparatus, which contributes to limiting discharge. This member for a semiconductor manufacturing apparatus includes: a dielectric substrate; a plug arrangement hole penetrating the dielectric substrate in a vertical direction; a plug embedded in the plug arrangement hole and having an upper surface and a lower surface; a conductive base plate joined to the lower surface of the dielectric substrate via a bonding layer; and a gas supply path passing through the base plate and the bonding layer and serving to supply gas to the plug. The plug is configured from a dielectric material. The plug has a dense portion, a gas flow path having a lower relative dielectric constant than the dense portion and penetrating the plug for allowing the gas to flow, and a voltage drop promotion portion having a lower relative dielectric constant than the dense portion and not forming a flow path for allowing the gas to flow.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
This invention addresses the problem of providing a member for a semiconductor manufacturing apparatus, in which a plug can be embedded into a plug disposition hole with high positioning accuracy even without using an adhesive. The member for a semiconductor manufacturing apparatus comprises: a ceramic substrate that has an upper surface and a lower surface for placing a wafer; a plug disposition hole that penetrates the ceramic substrate in an up-down direction and has a tapered inner circumferential surface having an upper opening area larger than a lower opening area; a ceramic plug that has a dense outer circumferential surface and a gas flow path penetrating the plug, and is embedded such that the dense outer circumferential surface of the plug is directly fitted to the inner circumferential surface of the plug disposition hole; a conductive base plate bonded to the lower surface of the ceramic substrate via a bonding layer; and a gas supply path that passes through the base plate and the bonding layer to supply gas to the gas flow path of the ceramic plug.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
This wafer mounting table 10 is provided, inside a ceramic plate 12 that has a wafer mounting surface 12a on the upper surface, with a sub RF electrode 21 which is a first conductive layer and a jumper 22 which is a second conductive layer, at different heights, and is also provided with a connection part 23 which electrically connects the sub RF electrode 21 and the jumper 22 to each other. The sub RF electrode 21, the jumper 22, and the connection part 23 form a seamless one-piece structure 30.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A liquid fuel production system including: a gas-adsorbing/desorbing portion; a heating medium-supplying portion configured to supply, to the gas-adsorbing/desorbing portion, a heating medium for heating the gas-adsorbing/desorbing portion; a liquid fuel-synthesizing portion including a first gas flow path storing a catalyst that advances a conversion reaction from a raw material gas to a liquid fuel, and a second gas flow path through which a temperature-controlling gas that controls a temperature of the first gas flow path is flowed, the liquid fuel-synthesizing portion being configured to flow a first outflow gas out of the first gas flow path, and to flow a second outflow gas out of the second gas flow path; and a heat exchanger configured to perform heat exchange between the second outflow gas and the heating medium to heat the heating medium. The second outflow gas contains a condensable gas.
A liquid fuel production system including: a gas-adsorbing/desorbing portion; a heating medium-supplying portion configured to supply, to the gas-adsorbing/desorbing portion, a heating medium for heating the gas-adsorbing/desorbing portion; a liquid fuel-synthesizing portion including a first gas flow path storing a catalyst that advances a conversion reaction from a raw material gas to a liquid fuel, and a second gas flow path through which a temperature-controlling gas that controls a temperature of the first gas flow path is flowed, the liquid fuel-synthesizing portion being configured to flow a first outflow gas out of the first gas flow path, and to flow a second outflow gas out of the second gas flow path; and a heat exchanger configured to perform heat exchange between the first outflow gas and the heating medium to heat the heating medium. The first outflow gas contains a condensable gas.
C10L 1/04 - Liquid carbonaceous fuels essentially based on blends of hydrocarbons
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 8/00 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes
B01J 8/02 - Chemical or physical processes in general, conducted in the presence of fluids and solid particlesApparatus for such processes with stationary particles, e.g. in fixed beds
57.
METHOD FOR PRODUCING LIQUID FUEL AND LIQUID FUEL SYNTHESIS SYSTEM
A method of producing a liquid fuel includes: causing a raw material gas containing at least a carbon oxide and hydrogen to flow into a reactor storing a catalyst; and producing the liquid fuel from the raw material gas through a conversion reaction in the presence of the catalyst. The raw material gas further contains oxygen. The ratio of the concentration of carbon monoxide to the concentration of carbon dioxide in the carbon oxide is 0.9 or less.
The present invention provides a ceramic susceptor that, desirably, makes it possible to reduce impedance of an RF rod for suppressing an increase in heat generation that accompanies an increase in frequency. This ceramic susceptor comprises: a disc-shaped ceramic plate which has a first surface and a second surface and in which an RF electrode and a heater electrode are embedded; a cylindrical ceramic shaft which is attached to the second surface of the ceramic plate and which has an internal space; an RF rod, one end of which is directly or indirectly connected to the RF electrode, the other end of which protrudes from the second surface and extends through the internal space; and a heater rod, one end of which is directly or indirectly connected to the heater electrode, the other end of which protrudes from the second surface and extends through the internal space. The RF rod includes: a base part which includes an end part that is fitted in a terminal hole formed in the second surface of the ceramic plate; a core part which extends from the base part in a direction away from the second surface; and an outer peripheral part which covers the outer periphery of the core part and is made of a non-magnetic material.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
2222 in a gas to be measured in a designated space. In a gas sensor 100, a pump control unit adjusts, with an oxygen pump cell 21, the partial pressure of oxygen in a first internal cavity 20 so that substantially all water vapor and carbon dioxide in the gas to be measured is decomposed, adjusts, with a first measuring pump cell 50, the partial pressure of oxygen in a second internal cavity 40 so that hydrogen produced by the decomposition of water vapor is selectively burned, and adjusts, with a second measuring pump cell 41, the partial pressure of oxygen in the vicinity of the surface of an in-cavity second measuring electrode 44 so that carbon monoxide produced by the decomposition of carbon dioxide is selectively burned, and a concentration calculation unit calculates the water vapor concentration on the basis of the electric current flowing through the first measuring pump cell 50, calculates the carbon dioxide concentration on the basis of the electric current flowing in the second measuring pump cell 41, and calculates the oxygen concentration on the basis of the values of electric currents flowing respectively in the pump cells 21, 50, and 41.
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF PRODUCING GROUP-III ELEMENT NITRIDE SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Provided is a method of inspecting a Group-III element nitride substrate, the method including: preparing a Group-III element nitride substrate doped with an element except a Group-III element; irradiating the Group-III element nitride substrate with excitation energy; and measuring a half width of a band-edge emission peak of an emission spectrum obtained by the irradiation.
G01N 23/2251 - Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups , or by measuring secondary emission from the material using electron or ion microprobes using incident electron beams, e.g. scanning electron microscopy [SEM]
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/78 - Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
H10D 30/47 - FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
H10D 62/85 - Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
61.
METHOD FOR PRODUCING LIQUID FUEL AND LIQUID FUEL SYNTHESIS SYSTEM
A method of producing a liquid fuel includes: causing a raw material gas containing at least a carbon oxide and hydrogen to flow into a reactor storing a catalyst; and producing the liquid fuel from the raw material gas through a conversion reaction in the presence of the catalyst. The raw material gas further contains an inert gas. A ratio of a concentration of carbon monoxide to a concentration of carbon dioxide in the carbon oxide is 0.9 or less.
A liquid fuel production system includes: a liquid fuel-synthesizing portion configured to advance a conversion reaction from a raw material gas containing at least hydrogen and a carbon oxide to a liquid fuel; a raw material gas-supplying portion configured to supply the raw material gas to the liquid fuel-synthesizing portion; and a raw material gas-circulating portion configured to resupply a remaining raw material gas, which contains the hydrogen and the carbon oxide that are unreacted, and an acidic by-product of the conversion reaction, from the liquid fuel-synthesizing portion to the raw material gas-supplying portion, wherein the raw material gas-supplying portion includes a mixing portion configured to mix an amine compound and the remaining raw material gas in the presence of water vapor, and a moisture-removing portion configured to remove a neutralized product of the amine compound and the acidic by-product together with condensed water of the water vapor.
C10L 1/02 - Liquid carbonaceous fuels essentially based on components consisting of carbon, hydrogen, and oxygen only
C07C 1/04 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon monoxide with hydrogen
A solid electrolyte includes, as a main phase, a monoclinic phase of a compound containing Li, F, and M that is a metallic element(s) other than Li or a metalloid element(s). In an X-ray diffraction pattern obtained by an X-ray diffraction measurement, a content of the monoclinic phase quantitatively determined by an RIR method is higher than or equal to 65%.
A solid electrolyte contains A, M, F, and X. A is at least one element selected from a group consisting of Li, Na, and K. M is a metallic element(s) other than A or a metalloid element(s). X is at least one element selected from a group consisting of Cl, Br, and I.
There is provided a ceramic susceptor including: a disk-shaped ceramic plate bonded body including an upper ceramic plate and a lower ceramic plate bonded to each other at a bonding surface, the disk-shaped ceramic plate bonded body having a first surface opposite the bonding surface of the upper ceramic plate and a second surface opposite the bonding surface of the lower ceramic plate; at least one internal electrode selected from the group consisting of an RF electrode and an ESC electrode, the internal electrode being embedded in the upper ceramic plate parallel to the first surface; a first heater circuit embedded in the lower ceramic plate parallel to the first surface; and a thermocouple insertion groove provided in the bonding surface side of the upper ceramic plate or the lower ceramic plate, the thermocouple insertion groove forming a thermocouple insertion path together with the bonding surface.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
A firing system may include: a plurality of furnaces each configured to fire a treatment object in a saggar, each of the plurality of furnaces having an entrance through which the saggar is conveyed into the furnace and an exit through which the saggar is conveyed out of the furnace; and a recovery unit configured to recover the treatment object fired by each of the plurality of furnaces. One recovery unit is arranged for the plurality of furnaces.
F27B 9/02 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-track typeFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity of multiple-chamber typeCombinations of furnaces
F27D 5/00 - Supports, screens or the like for the charge within the furnace
An acid gas adsorption device includes: an acid gas adsorption part and one case. The acid gas adsorption part includes an acid gas adsorption material capable of adsorbing an acid gas. The acid gas adsorption part includes: a first adsorption portion; and a second adsorption portion arranged on a downstream side of the first adsorption portion in a direction of passage of a fluid. The first adsorption portion includes a first acid gas adsorption material having a relatively small adsorption force for adsorbing the acid gas and a relatively large adsorption capacity for the acid gas. The second adsorption portion includes a second acid gas adsorption material having a relatively large adsorption force for adsorbing the acid gas and a relatively small adsorption capacity for the acid gas. The one case houses the first adsorption portion and the second adsorption portion together.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
An acid gas adsorption device includes: an acid gas adsorption part that allows passage of a fluid in a predetermined direction; and one case. The acid gas adsorption part includes an acid gas adsorption material capable of adsorbing an acid gas. The acid gas adsorption part is divided into at least: a first adsorption portion including an upstream end surface in the direction of passage of the fluid; and a second adsorption portion arranged on a downstream side of the first adsorption portion in the direction of passage of the fluid. The one case houses the first adsorption portion and the second adsorption portion together. The first adsorption portion and/or the second adsorption portion is divided into a plurality of blocks in a direction intersecting with the direction of passage of the fluid.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
Provided is a ceramic susceptor capable of reducing an influence on adsorption performance or plasma characteristics while incorporating not only a heater circuit and a thermocouple insertion path but also an internal electrode such as an ESC electrode and an RF electrode. This ceramic susceptor includes: a disk-shaped ceramic plate assembly including an upper ceramic plate and a lower ceramic plate bonded to each other at a bonding surface, and having a first surface opposite to the bonding surface of the upper ceramic plate and a second surface opposite to the bonding surface of the lower ceramic plate; at least one internal electrode embedded in the upper ceramic plate in parallel with the first surface and selected from the group consisting of an RF electrode and an ESC electrode; a first heater circuit embedded in the lower ceramic plate in parallel with the first surface; and a thermocouple insertion groove provided on the bonding surface side of the upper ceramic plate or the lower ceramic plate and constituting a thermocouple insertion path together with the bonding surface.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A gas pyrolysis unit 2 according to the present invention comprises: a honeycomb structure 20 having one or a plurality of honeycomb structure parts 24 having an outer circumferential wall 240 and a partition wall 241 which is disposed inside the outer circumferential wall 240 and partitions and forms a plurality of cells 241a that form flow channels extending from one end surface to the other end surface; and an induction heating coil 21 that is disposed on the outer circumference of the honeycomb structure 20. At least one of the one or the plurality of honeycomb structure parts 24 comprises a conductor and/or magnetic body 25.
A gas reaction synthesis unit 2 according to the present invention comprises: a honeycomb structure 20 having one or more honeycomb structure parts 24, each of which has an outer circumferential wall 240, and a partition wall 241 that is disposed inside the outer circumferential wall 240 and partitions and forms a plurality of cells 241a constituting flow channels extending from one end surface to the other end surface; and an induction heating coil 21 disposed on the outer circumference of the honeycomb structure 20. At least one of the one or more honeycomb structure parts 24 includes a conductor and/or a magnetic body 25.
C07C 1/12 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon dioxide with hydrogen
C07C 27/00 - Processes involving the simultaneous production of more than one class of oxygen-containing compounds
A fluid heating unit 2 according to the present invention is provided with: a honeycomb structure 20 including one or a plurality of honeycomb structure parts 24 that each have an outer peripheral wall 240 and a partition wall 241 disposed inside the outer peripheral wall 240 and partitioning and forming a plurality of cells 241a that form flow channels extending from one end surface to the other end surface; and an induction heating coil 21 disposed on the outer periphery of the honeycomb structure 20. At least one of the one or more honeycomb structure parts 24 comprises a conductor and/or a magnetic body 25.
H05B 6/10 - Induction heating apparatus, other than furnaces, for specific applications
F24H 1/10 - Continuous-flow heaters, i.e. heaters in which heat is generated only while the water is flowing, e.g. with direct contact of the water with the heating medium
There is provided a ceramic susceptor including: a ceramic plate having a first surface and a second surface and having an RF electrode and a heater electrode embedded therein; a cylindrical ceramic shaft attached to the second surface and having an internal space; an RF rod having one end connected to the RF electrode and having another end extending from the second surface; and a heater rod having one end connected to the heater electrode and having another end extending from the second surface and extending through the internal space. The RF rod includes: a root portion including an end portion to be fitted into a terminal hole formed in the second surface of the ceramic plate; a core portion extending from the root portion in a direction away from the second surface; and a non-magnetic material-made outer circumferential portion covering an outer circumference of the core portion.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
74.
MANAGEMENT DEVICE, MANAGEMENT METHOD, AND ACIDIC GAS ADSORPTION SYSTEM
Provided is a management apparatus 30 including: a concentration acquisition unit 31 configured to acquire a first concentration which is a concentration of an acidic gas when a gas containing the acidic gas is introduced into an acidic gas adsorber that adsorbs the acidic gas and a second concentration which is a concentration of the acidic gas after being processed in the acidic gas adsorber; a captured amount calculation unit 32 configured to calculate a captured amount of the acidic gas adsorbed by the acidic gas adsorber based on the first concentration and the second concentration; and a management unit 33 configured to conduct management to replace the acidic gas adsorber based on a regeneration timing of the acidic gas adsorber determined based on the calculated captured amount. The present invention thereby provides a management apparatus etc. that facilitate the management of an acidic gas adsorber and save costs.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
A gas sensor includes a sensor element and a control unit. The sensor element includes: a base part; a measurement-object gas flow cavity; an oxygen pump cell; a decomposing pump cell including an intracavity decomposing pump electrode; an intracavity detection electrode; and a reference electrode. A pump control part of the control unit operates the decomposing pump cell so that a voltage between the intracavity detection electrode and the reference electrode is at a predetermined value, thereby decomposing at least a part of the target gas to be measured at the intracavity decomposing pump electrode and pumping out oxygen generated by decomposing the target gas to be measured. A concentration calculating part of the control unit calculates a concentration of the target gas to be measured in the measurement-object gas based on a value of a voltage between the intracavity decomposing pump electrode and the reference electrode.
G01N 33/00 - Investigating or analysing materials by specific methods not covered by groups
76.
GROUP III ELEMENT NITRIDE SUBSTRATE, SEMICONDUCTOR ELEMENT, METHOD FOR PROCESSING GROUP III ELEMENT NITRIDE SUBSTRATE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
This invention provides a group III element nitride substrate excellent in workability. The group III element nitride substrate is doped with a transition element and has an absorption coefficient of 22 cm -1 or more for light with a wavelength λ of 400 nm or more.
A fluid heating unit 2 according to the present invention comprises: a honeycomb structure 20 having one or more honeycomb structure parts 24 each having an outer peripheral wall 240 and a partition wall 241 that is disposed inside the outer peripheral wall 240 and partitions and forms a plurality of cells 241a forming flow paths extending from one end surface to the other end surface; and an induction heating coil 21 disposed on the outer periphery of the honeycomb structure 20. At least one of the one or more honeycomb structure parts 24 includes an isolation region 242 isolated from corrosive fluid passing through the cells 241a, and includes a conductor and/or a magnetic body 25 provided in the isolation region 242.
H05B 6/10 - Induction heating apparatus, other than furnaces, for specific applications
F24H 1/10 - Continuous-flow heaters, i.e. heaters in which heat is generated only while the water is flowing, e.g. with direct contact of the water with the heating medium
A refining method according to the present invention is a refining method for crystallizing a compound with at least one crystal form, including setting, as a target wavelength and a target concentration, a specific infrared wavelength and a specific concentration at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent, and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating a solution of the compound dissolved in the solvent at the target concentration with infrared radiation including the target wavelength.
C07D 223/26 - Dibenz [b, f] azepinesHydrogenated dibenz [b, f] azepines with hydrocarbon radicals, substituted by nitrogen atoms, attached to the ring nitrogen atom having a double bond between positions 10 and 11
C07D 277/30 - Radicals substituted by carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals
C30B 7/02 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
Provided is a multi-zone ceramic heater with jumpers, resistant to breakage during manufacture or use and capable of achieving not only desired heat uniformity but also a desired temperature distribution profile when changing the inner zone/outer zone power ratio. This ceramic heater comprises: a ceramic plate including an inner zone defined as a circular area within a prescribed distance from the center and an outer zone defined as an annular area outside the inner zone; an inner zone heater circuit embedded in the inner zone of the ceramic plate; an outer zone heater circuit embedded in the outer zone of the ceramic plate; and a pair of jumpers embedded in the inner zone of the ceramic plate so as not to contact the inner zone heater circuit, and electrically connected to the outer zone heater circuit. The resistance per jumper as a percentage of the resistance of the outer zone heater circuit is between 0.5% and 1.9%.
A power storage device according to the present invention comprises: a secondary battery that is chargeable and dischargeable; a control unit that controls charging and discharging of the secondary battery; a voltage detection unit that detects a voltage of the secondary battery; a current detection unit that detects a current flowing through the secondary battery; and a battery temperature detection unit that detects a temperature of the secondary battery. During charging of the secondary battery, the control unit performs a mid-charge capacity management process of obtaining a state of charge of the secondary battery on the basis of an integrated value of the current detected by the current detection unit and determining, on the basis of the state of charge, whether or not to continue charging of the secondary battery. While charging of the secondary battery is stopped, the control unit performs a during-stop-of-charge capacity management process of obtaining a state of charge of the secondary battery on the basis of the voltage detected by the voltage detection unit and the temperature detected by the battery temperature detection unit and determining, on the basis of the state of charge, whether or not to resume charging of the secondary battery. The control unit controls charging of the secondary battery on the basis of results of the mid-charge capacity management process and the during-stop-of-charge capacity management process.
H01M 10/48 - Accumulators combined with arrangements for measuring, testing or indicating the condition of cells, e.g. the level or density of the electrolyte
81.
PACKAGE, ELECTRONIC APPARATUS, AND PACKAGE MANUFACTURING METHOD
In the present invention, a heat dissipating member (22) is made of a metal sintered material. A frame (21) is made of a ceramic material. An adhesive layer (40) includes: a first interface (FC1) in contact with the frame (21); and a second interface (FC2) in contact with the heat dissipating member (22). The adhesive layer (40) is made of a composite material containing both a metal and a ceramic. The composite material and the ceramic material of the frame (21) are mutually sintered at the first interface (FC1), and the composite material and the metal sintered material of the heat dissipating member (22) are mutually sintered at the second interface (FC 2).
A trial production condition proposal system 1 is a system for proposing a trial production condition(s) for a material to a material developer and includes a regression model construction processing unit 112 and a trial production condition proposal processing unit 113. The regression model construction processing unit 112 executes regression model construction processing on measured characteristics data indicating an actual measurement result of characteristics of the material. The trial production condition proposal processing unit 113 searches for an optimum trial production condition for the material by using the constructed regression model and executes trial production condition proposal processing based on a search result. The regression model construction processing includes: processing for calculating a weight reference which is a reference for weighting on the measured characteristics data; and processing for performing weighting on the measured characteristics data based on the calculated weight reference.
A trial production condition proposal system 1 is a system for proposing a trial production condition(s) for a material to a material developer and includes a regression model construction processing unit 112 and a trial production condition proposal processing unit 113. The regression model construction processing unit 112 executes regression model construction processing on measured characteristics data indicating an actual measurement result of characteristics of the material. The trial production condition proposal processing unit 113 performs optimization processing for searching for an optimum trial production condition for the material by using the constructed regression model and executes trial production condition proposal processing based on the result of the optimization processing.
A frame body (21) has a first surface (SF1) attached to a heat dissipation plate (22) and a second surface (SF2) opposite thereto, and is made of a ceramic sintered body. The second surface (SF2) includes an inner region (R1), an intermediate region (R2), and an outer region (R3). A metallized layer (31) has an inner portion (P1), an intermediate portion (P2), and an outer portion (P3) that are respectively located on the inner region (R1), the intermediate region (R2), and the outer region (R3). A lead frame (30) is mounted on the outer portion (P3). A coating layer (40) covers the intermediate portion (P2), and is made of a ceramic material. The lead frame (30), the inner region (R1), and the outer region (R3) are gold-plated, and the surface of the coating layer (40) is not gold-plated.
H01L 23/10 - ContainersSeals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
H01L 23/40 - Mountings or securing means for detachable cooling or heating arrangements
A ceramic heater 10 comprises: a ceramic plate 20 having a wafer mounting surface 21 on the upper surface 20a thereof; inner peripheral side and outer peripheral side resistance heating elements 25, 26 that are buried in the ceramic plate 20 and wired in zones Z1, Z2 obtained by dividing the wafer mounting surface 21 into two; a cylindrical shaft 40 supporting the ceramic plate 20 from the lower surface 20b thereof; a thermocouple insertion hole 30 provided in a shaft inner region 27 of the lower surface 20b of the ceramic plate 20; and four resistance heating element terminal holes provided in the shaft inner region 27 so as to respectively correspond to terminals 25a, 25b, 26a, 26b of the inner peripheral side and outer peripheral side resistance heating elements 25, 26. The inner peripheral side resistance heating element 25 is located above the bottom surface 31 of the thermocouple insertion hole 30, and has a portion overlapping the thermocouple insertion hole 30 in plan view.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
In the present invention, a computer acquires a parameter value set including values of a plurality of parameters each classified into at least one among a plurality of factors affecting the generation of crystals. The computer inputs the parameter value set into a crystal generation model to make a prediction pertaining to the generation of a crystalline form that a substance may take. The crystal generation model represents a crystal generation process and includes elapsed time as an element. The computer outputs prediction result information which is information pertaining to the result of prediction.
G16C 60/00 - Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
Provided is a gas sensor capable of accurately measuring the hydrogen gas concentration in a high-temperature gas to be measured. The gas sensor includes a sensor element and a control device. The sensor element includes: a gas-to-be-measured circulation cavity 15 having a gas introduction port 10, an oxygen discharge chamber 20, and a measurement chamber 61; an oxygen pump cell including an in-cavity oxygen pump electrode 22; and a measurement pump cell including an in-cavity measurement electrode 44. The in-cavity oxygen pump electrode 22 has catalytic activity with respect to oxygen and does not have catalytic activity for oxidizing hydrogen. A pump control unit included in the control device operates the oxygen pump cell to pump oxygen in the gas to be measured from the oxygen discharge chamber 20, and operates the measurement pump cell to pump oxygen into the measurement chamber 61 thereby oxidizing the hydrogen gas in the gas to be measured. A concentration calculation unit included in the control device calculates the hydrogen gas concentration in the gas to be measured on the basis of the value of the current flowing in the measurement pump cell.
Provided is a bonded body of a ceramic plate and an MMC plate, the bonded body having high bonding strength. This bonded body comprises: a ceramic plate; an MMC plate that is formed from a metal matrix composite (MMC) and is disposed opposing to one side of the ceramic plate; and a bonding layer that is for bonding the ceramic plate and the MMC plate together and that is disposed between the ceramic plate and the MMC plate. The bonding layer comprises Al as the primary component and Si and Mg as secondary components. The bonding interface between the ceramic plate and the bonding layer comprises an Mg-containing layer.
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A ceramic heater includes: a ceramic plate having a wafer placement surface on its upper surface; two or more resistance heating elements embedded in the ceramic plate and provided for corresponding two or more divided zones of the wafer placement surface; a tubular shaft supporting the ceramic plate from a lower surface of the ceramic plate; a thermocouple insert hole provided in a shaft inner region that is a portion of the lower surface of the ceramic plate defined by the tubular shaft; and four or more resistance heating element terminal holes provided in the shaft inner region and corresponding to both ends of the two or more resistance heating elements. At least one of the two or more resistance heating elements is located above a bottom of the thermocouple insert hole and has a portion overlapping the thermocouple insert hole in plan view.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
G05D 23/22 - Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element being a thermocouple
A heat treatment system may include: a heat treatment furnace including an entrance, an exit, and an internal space through which a plurality of saggars is conveyed from the entrance toward the exit; and a return line located outside the heat treatment furnace and configured to convey the plurality of saggars from the exit to the entrance. The return line may include a first placement unit configured to allow the saggars to be placed thereon. The heat treatment system may include a movement device configured to move the first placement unit; and a first separator configured to separate a first space in which the first placement unit is located from a second space in which the movement device is located.
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatmentFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
There is provided a ceramic heater including a ceramic plate including an inner zone defined as a circular region within a predetermined distance from a center of the ceramic plate and an outer zone defined as an annular region outside the inner zone, an inner zone heater circuit embedded in the inner zone of the ceramic plate, an outer zone heater circuit embedded in the outer zone of the ceramic plate, and one pair of jumpers which are embedded in the inner zone of the ceramic plate so as not to contact the inner zone heater circuit and are electrically connected to the outer zone heater circuit. A percentage of a resistance value per jumper to a resistance value of the outer zone heater circuit is from 0.5 to 1.9%.
H05B 3/28 - Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
A suction collection system may include: a heat treatment chamber; a suction chamber disposed downstream of an exit of the heat treatment chamber; a suction nozzle disposed in the suction chamber and configured to suction and collect an object; a first partition disposed between the heat treatment chamber and the suction chamber and configured to perform switching between a communicating state in which the heat treatment chamber and the suction chamber communicate and a non-communicating state in which the heat treatment chamber and the suction chamber do not communicate; a gas replacement chamber disposed downstream of the suction chamber; and a second partition disposed between the suction chamber and the gas replacement chamber and configured to perform switching between a communicating state in which the suction chamber and the gas replacement chamber communicate and a non-communicating state in which the suction chamber and the gas replacement do not communicate.
B65G 47/24 - Devices influencing the relative position or the attitude of articles during transit by conveyors orientating the articles
B65G 47/90 - Devices for picking-up and depositing articles or materials
B65G 59/02 - De-stacking from the top of the stack
B65G 59/12 - De-stacking of articles characterised by de-stacking during transit
F27B 9/24 - Furnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatmentFurnaces through which the charge is moved mechanically, e.g. of tunnel type Similar furnaces in which the charge moves by gravity characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path being carried by a conveyor
Provided is a bonded body including a ceramic plate; a metal matrix composite (MMC) plate facing one side of the ceramic plate and made of an MMC; a bonding layer interposed between the ceramic plate and the MMC plate and bonding the ceramic plate and the MMC plate, wherein the bonding layer includes Al as a main component and Si and Mg as subcomponents; wherein a bonding interface between the ceramic plate and the bonding layer includes a Mg-containing layer.
C04B 37/02 - Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A sensor element configured to detect a concentration of a specific gas in a measurement-object gas, the sensor element includes an element body having a front end, a rear end and a peripheral face; an inner electrode disposed inside the element body; and a conducting section including an inner conducting section and an outer conducting section, the outer conducting section including a connector electrode disposed at a part of the peripheral face that is near the rear end, the outer conducting section further including a segment disposed on the peripheral face and/or a segment disposed on the peripheral face and exposed to an outside of the sensor element, the outer conducting section being electrically continuous with the inner conducting section. Letting a porosity be Rp [%] and a thickness be Dc [mm], a covering portion of the outer conducting section that covers the inner conducting section satisfies Rp/Dc≤145%/mm.
A sensor element includes: an element body; a conducting section including an inner conducting section and an outer conducting section, the outer conducting section, being electrically continuous with the inner conducting section, wherein the outer conducting section includes a connecting segment connected to a routing part of the inner conducting section, wherein the connecting segment of the outer conducting section has gas permeability, and/or at least a portion of the routing part of the inner conducting section is exposed to an outside of the sensor element, and wherein an outer periphery of the routing part of the inner conducting section has a perimeter that is a sum of a first perimeter of a portion covered by the connecting segment having the gas permeability and a second perimeter of a portion exposed to the outside of the sensor element, the sum being shorter than 1.30 mm.
A separation membrane module includes a tubular housing, a columnar membrane structure housed in the housing and extending in a longitudinal direction, and an annular first flange surrounding a first end portion of the membrane structure. A first end surface of the membrane structure is located outward of an end surface of the first flange in the longitudinal direction.
C07C 1/04 - Preparation of hydrocarbons from one or more compounds, none of them being a hydrocarbon from oxides of carbon from carbon monoxide with hydrogen
B01D 53/22 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by diffusion
B01J 15/00 - Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet materialApparatus specially adapted therefor
