Abstract

The present invention relates to silazane-siloxane random copolymers as well as their production and their uses, particularly in LEDs.

IPC Classes  ?

• H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material
• C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• C08G 77/54 - Nitrogen-containing linkages
• C08G 77/04 - Polysiloxanes
• C08G 77/06 - Preparatory processes
• C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• F21Y 115/10 - Light-emitting diodes [LED]

Abstract

2; and a surface-modified nanoparticle, wherein the surface-modified nanoparticle does not contain any zirconium dioxide.

IPC Classes  ?

• C08G 77/26 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen nitrogen-containing groups
• C08G 77/12 - Polysiloxanes containing silicon bound to hydrogen
• C08G 77/452 - Block- or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
• C08K 3/22 - OxidesHydroxides of metals
• C08K 3/28 - Nitrogen-containing compounds
• C08K 9/06 - Ingredients treated with organic substances with silicon-containing compounds
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

[Problem] To provide a composition, which is a reverse pattern formation composition comprising an aqueous solvent having little influence on a resist pattern, and which is excellent in flatness and filling properties after coating and has excellent etching resistance. Furthermore, a method for forming a pattern using the same is provided. [Means for Solution] A reverse pattern formation composition comprising a polysiloxane compound comprising a repeating unit having a nitrogen-containing group and a solvent comprising water, and a method for forming a fine pattern using the same.

IPC Classes  ?

• G03F 7/36 - Imagewise removal not covered by groups , e.g. using gas streams, using plasma
• G03F 7/075 - Silicon-containing compounds
• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• C09D 183/04 - Polysiloxanes
• G03F 7/16 - Coating processesApparatus therefor

Abstract

[Problem] To provide a material, which is a composition for a black matrix, and which is suitable for a display device structure having high luminance and suitable for producing a black matrix having high heat resistance and high light shielding properties. [Means for Solution] To use a composition for a black matrix comprising (I) a siloxane polymer having specific repeating unit(s), (II) a silanol condensation catalyst, (III) a black colorant, and (IV) a solvent.

IPC Classes  ?

• G02B 5/20 - Filters
• G02F 1/1335 - Structural association of cells with optical devices, e.g. polarisers or reflectors
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• C09D 183/04 - Polysiloxanes
• C08L 83/04 - Polysiloxanes
• C08G 77/18 - Polysiloxanes containing silicon bound to oxygen-containing groups to alkoxy or aryloxy groups
• C08G 77/26 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen nitrogen-containing groups
• C08K 3/04 - Carbon
• C08G 77/16 - Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxy groups
• C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon

Abstract

[Object] To provide a polysilazane-containing composition for forming a film. In order to form a dense and processable siliceous film, the composition is intended to be employed in a two-step conversion process comprising the steps of: forming a film having a dry surface from the composition provided that the conversion in to the siliceous substance proceeds insufficiently; and then subjecting the film to secondary processing. [Means] The present invention provides a polysilazane-containing film-forming composition comprising a particular amine compound, a polysilazane compound, and a solvent; and the invention also provides a process for forming a siliceous substance. In the process, the composition is applied to coat a substrate and thereafter converted into the siliceous substance. The particular amine compound has two amine groups, and the amine groups have at least one phenyl-substituted hydrocarbon group.

IPC Classes  ?

• C08F 2/48 - Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
• C08J 7/18 - Chemical modification with polymerisable compounds using wave energy or particle radiation
• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• C08G 77/62 - Nitrogen atoms
• C08L 83/16 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

[Object] To provide a composition capable of forming a cured film having low permittivity and excellence in chemical resistance, in heat resistance and in resolution; and further to provide a production process employing the composition. [Means] The present invention provides a composition comprising: an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit; a polysiloxane; a diazonaphthoquinone derivative; a compound generating acid or base when exposed to heat or light; and a solvent.

IPC Classes  ?

• G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• G03F 7/075 - Silicon-containing compounds
• G03F 7/022 - Quinonediazides
• C09D 183/04 - Polysiloxanes
• C08L 83/04 - Polysiloxanes
• C08L 101/08 - Carboxyl groups
• C08L 101/12 - Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
• G03F 7/20 - ExposureApparatus therefor

Abstract

The present invention relates to a composition comprising; components a. c. and d; and optional component b. wherein, component a. is a metal compound having the structure (I), optional component b., is a polyol additive, having structure (VI), component c. is a high performance polymer additive, and component d. is a solvent. The present invention further relates to using this compositions in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

IPC Classes  ?

• C23C 18/12 - Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coatingContact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material

Abstract

The present invention relates a coating composition comprising a solvent, metal oxide nanoparticles dispersed in this solvent, a high carbon polymer dissolved in this solvent, where the high carbon polymer comprises a repeat unit of structure (1), a hydroxybiphenyl repeat unit of structure (2) and an moiety containing a fused aromatic containing moiety of structure (3) wherein R1 and R2 are independently selected from the group consisting of hydrogen, an alkyl and a substituted alkyl, Ar is an unsubstituted or substituted fused aromatic ring and X1 is an alkylene spacer, or a direct valence bound. The invention also relates to a processes where this composition is used in lithographic applications as a patterned hard mask either through and inverse tone hard mask pattern transfer process or a conventional mask pattern process using a photoresist, to pattern the hard mask and a hard mask to pattern a semiconductor substrate with a plasma. The invention, also further comprises a process in which a composition comprised of a metal oxide and metal oxide nanoparticle dispersed in a solvent is used to coat a metal hard mask to which is used in a standard hard mask pattern transfer process to pattern a semiconductor substrate.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
• H01L 21/308 - Chemical or electrical treatment, e.g. electrolytic etching using masks
• H01L 21/311 - Etching the insulating layers

Abstract

The present invention relates to a novel styrenic polymer and to the novel composition comprised of this polymer and a solvent; wherein the styrenic polymer has a polydispersity from 1 to 1.3 and further wherein each polymer chain of the styrenic polymer is capped with one end group of structure 1), wherein, and L is a linking group selected from the group consisting of a direct valence bond, oxy (-O-), carbonyloxy, (-(C=O)-O-), carbonate (-O-(C=O)-O-); L2 is a C-1 to C-20 substituted or unsubstituted alkylene spacer, an arylene spacer or a direct valence bond, R, is hydrogen, a halide, a C-1 to C-20 alkyl moiety, or a C-1 to C-20 alkyloxymoiety, m isan integer from 1 to 3; and (I) represent the direct valence bond attaching the end group 1) to the end of the polymer chain of the styrenic polymer. In another aspect of this invention it pertains to the use of this composition to create a grafted film on a substrate, and in a further aspect this grafted film may be used in a directed self-assembly process.

IPC Classes  ?

• C08F 8/00 - Chemical modification by after-treatment
• C08F 2/38 - Polymerisation using regulators, e.g. chain terminating agents
• C08F 12/08 - Styrene
• C09D 125/18 - Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
• C08F 8/02 - Alkylation

Abstract

[Problem] To provide a black matrix composition which is a material suitable for the production of a black matrix that has high light-blocking ability, that is highly heat resistant, and that is suitable for a high-intensity display device structure. [Solution] The present invention uses a black matrix composition characterized by comprising (I) a black coloring agent containing carbon black having a volume average particle size of 1-300 nm, (II) a siloxane polymer obtained by hydrolyzing and condensing a silane compound represented by a prescribed formula in the presence of an acidic or basic catalyst, (III) surface reforming silica fine particles, (IV) a thermobase generator, and (V) a solvent.

IPC Classes  ?

• G02B 5/20 - Filters
• C09C 1/48 - Carbon black
• C08G 77/04 - Polysiloxanes
• C08K 3/04 - Carbon
• C08K 9/06 - Ingredients treated with organic substances with silicon-containing compounds
• C08L 83/04 - Polysiloxanes

Abstract

An object is to provide a planarizing coating-forming composition having high etching resistance and good gap filling property. Another object is to provide a method for manufacturing a device using the planarizing coating-forming composition. Provided are: a planarizing coating-forming composition comprising a specific monomer (I) and a specific organic solvent (II); a method for manufacturing a planarizing coating using the planarizing coating- forming composition; and a method for manufacturing a device using the planarizing coating-forming composition.

IPC Classes  ?

• C07D 311/82 - Xanthenes
• C07D 311/96 - Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings spiro-condensed with carbocyclic rings or ring systems
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

An object is to provide a planarizing coating-forming composition that exhibits high etching resistance, good gap filling property, and high flatness. Another object is to provide a method for manufacturing a device using the planarizing coating-forming composition. Provided are: a planarizing coating-forming composition comprising a specific monomer and a specific acrylate derivative; a method for manufacturing a planarizing coating using the planarizing coating-forming composition; and a method for manufacturing a device using the planarizing coating-forming composition.

IPC Classes  ?

• C07D 311/78 - Ring systems having three or more relevant rings
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

An object is to provide a carbon-comprising underlayer-forming composition having goodcoating formation property and gap filling property. Another object is to provide a method for manufacturing a device using the carbon-comprising underlayer-forming composition. [Solution] Provided are: a carbon-comprising underlayer-forming composition comprising a specific acrylate derivative and a specific organic solvent; a method for manufacturing a carbon-comprising underlayer using the carbon- comprising underlayer-forming composition; and a method for manufacturing a device using the carbon-comprising underlayer-forming composition.

IPC Classes  ?

• C07C 69/54 - Acrylic acid estersMethacrylic acid esters
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

To provide a siloxazane compound capable of shortening the time of a siliceous film producing process and a composition comprising the same. A siloxazane compound having a specific structure, wherein the ratio of the number of O atoms to the total number of O atoms and N atoms is 5% or more and 25% or less, and in the spectrum of the siloxazane compound obtained by 29Si-NMR in accordance with the inverse gate decoupling method, the ratio of the area of the peak detected in -75ppm to -90ppm is 4.0% or less to the area of the peak detected in -25ppm to -55ppm; and a composition comprising the same.

IPC Classes  ?

• C08G 77/54 - Nitrogen-containing linkages
• C09D 183/14 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali- soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

IPC Classes  ?

• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
• G03F 7/38 - Treatment before imagewise removal, e.g. prebaking
• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

[Problem]To provide a material, which is a composition for a black matrix, and which is suitable for a display device structure having high luminance and suitable for producing a black matrix having high heat resistance and high light shielding properties. [Means for Solution] To use a composition for a black matrix comprising (I) a siloxane polymer having specific repeating unit(s), (II) a silanol condensation catalyst, (III) a black colorant, and (IV) a solvent.

IPC Classes  ?

• C09D 183/04 - Polysiloxanes
• C08L 83/04 - Polysiloxanes

Abstract

[Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 1 00 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

The present invention relates to a formulation suitable for the preparation of a highly refractive encapsulation material with good barrier properties towards water vapor for an LED, to an encapsulation material for an LED having a high refractive index and good barrier properties towards water vapor which is obtainable from said formulation and to a light emitting device (LED) comprising said encapsulation material. The formulation comprises a polymer comprising a first repeating unit M1 and a second repeating unit M2; and a surface-modified zirconium dioxide nanocrystal.

IPC Classes  ?

• C08K 3/18 - Oxygen-containing compounds, e.g. metal carbonyls
• C08K 3/22 - OxidesHydroxides of metals
• C09D 183/06 - Polysiloxanes containing silicon bound to oxygen-containing groups
• C09D 183/08 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
• C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

The present invention relates to a formulation suitable for the preparation of a highly refractive encapsulation material with good barrier properties towards water vapor for an LED, to an encapsulation material for an LED having a high refractive index and good barrier properties towards water vapor which is obtainable from said formulation and to a light emitting device (LED) comprising said encapsulation material. The formulation comprises a polymer comprising a first repeating unit U1 and a second repeating unit U2; and a surface-modified nanoparticle, wherein the surface-modified nanoparticle does not contain any zirconium dioxide.

IPC Classes  ?

• H01L 33/56 - Materials, e.g. epoxy or silicone resin
• C08K 3/22 - OxidesHydroxides of metals
• C09D 183/06 - Polysiloxanes containing silicon bound to oxygen-containing groups
• C09D 183/08 - Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
• C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

The present invention provides a positive type photosensitive siloxane composition in which a film formed by the same has high heat resistance, high strength and high crack resistance, an active matrix substrate in which by-product is not generated, an occurrence of defects is suppressed, and an interlayer insulating film is easily formed at a low cost while having good transmittance, a display apparatus including the active matrix substrate, and a method of manufacturing the active matrix substrate. An active matrix substrate includes a plurality of gate wirings provided so as to extend parallel to each other on an insulating substrate, and a plurality of source wirings provided so as to extend parallel to each other in a direction intersecting the respective gate wirings. An interlayer insulating film and a gate insulating film are interposed at portions including the intersecting portions of the gate wirings and the source wirings, on a lower side of the source wiring. The interlayer insulating film is formed using the positive type photosensitive siloxane composition without using a resist.

IPC Classes  ?

• G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
• G02F 1/1333 - Constructional arrangements
• G03F 7/075 - Silicon-containing compounds
• G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
• C08L 83/04 - Polysiloxanes
• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
• C08G 73/08 - PolyhydrazidesPolytriazolesPolyaminotriazolesPolyoxadiazoles
• C08G 77/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
• C08G 77/04 - Polysiloxanes

Abstract

The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

[Subject] There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. [Solution means] There is provided a gap filling composition including a polymer having a certain structure and an organic solvent. There is provided a pattern forming method using a certain polymer.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/38 - Treatment before imagewise removal, e.g. prebaking

Abstract

[Object]To provide a polysilazane-containing composition for forming a film. In order to form a dense and processable siliceous film, the composition is intended to be employed in a two-step conversion process comprising the steps of: forming a film having a dry surface from the composition provided that the conversion in to the siliceous substance proceeds insufficiently; and then subjecting the film to secondary processing. [Means] The present invention provides a polysilazane-containing film-forming composition comprising a particular amine compound, a polysilazane compound, and a solvent; and the invention also provides a process for forming a siliceous substance. In the process, the composition is applied to coat a substrate and thereafter converted into the siliceous substance. The particular amine compound has two amine groups,and the amine groups have at least one phenyl-substituted hydrocarbon group.

IPC Classes  ?

• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

The present application for patent relates to a light-sensitive positive working photosensitive composition especially useful for imaging thick films using a composition which gives very good film uniformity and promotes a good process latitude against feature pattern collapse in patterns created upon imaging and developing of these films.

IPC Classes  ?

• G03F 7/004 - Photosensitive materials
• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

There is provided a gapfilling composition which can reduce pattern collapse and a pattern forming method using the composition. There is provided a gap filling composition including a gap filling compound,an organic solvent, and as required, water, the gap filling compound havinga certain structure and containinghydroxyl groups, carboxyl groups, or amino groups intramolecularly. There is provided a pattern forming method using a low molecular weight compound.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• G03F 7/32 - Liquid compositions therefor, e.g. developers

Abstract

[Object] To provide a negative type photosensitive composition developable with a low concentration alkali developer and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability; and further to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising : (I) an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit, (II) a polysiloxane, (III) a compound having two or more (meth)acryloyloxy groups, (IV) (i) a silicone derivative having a particular structure and/or (ii) a compound having two or more epoxy groups, (V) a polymerization initiator, and (VI) a solvent.

IPC Classes  ?

• G03F 7/075 - Silicon-containing compounds
• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

The present invention relates to a color conversion sheet (100) and an optical device comprising a color conversion sheet (100). The present invention further relates to a use of the color conversion sheet (100) in an optical device (200). The invention further more relates to method for preparing the color conversion sheet (100) and method for preparing the optical device (200).

IPC Classes  ?

• B32B 27/20 - Layered products essentially comprising synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
• C09K 11/02 - Use of particular materials as binders, particle coatings or suspension media therefor
• G02B 1/00 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements
• G02B 1/04 - Optical elements characterised by the material of which they are madeOptical coatings for optical elements made of organic materials, e.g. plastics
• G02B 1/115 - Multilayers
• H01L 33/50 - Wavelength conversion elements

Abstract

[Object] To provide a composition capable of forming a cured film having low permittivity and excellence in chemical resistance, in heat resistance and in resolution; and further to provide a production process employing the composition. [Means] The present invention provides a composition comprising : an alkali-soluble resin, namely, a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl- containing polymerization unit; a polysiloxane; a diazonaphthoquinone derivative; a compound generating acid or base when exposed to heat or light; and a solvent.

IPC Classes  ?

• C08L 83/04 - Polysiloxanes
• C09D 183/04 - Polysiloxanes

Abstract

[Problem] To provide a composition for forming a fine pattern having a good pattern shape even after being applied to a thick-film resist, a high size reduction rate and less defects, as well as a method for forming a fine pattern using the same. [Means for Solution] A composition comprising vinyl resin, an amine compound having a specific cage-type three-dimensional structure and a solvent, and a method for forming a fine pattern using the same.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• G03F 7/004 - Photosensitive materials
• G03F 7/031 - Organic compounds not covered by group
• G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers

Abstract

The present invention relates to a novel block copolymer comprising a low surface energy junction group between two blocks and the blocks are phase separable. The block polymer has the structure (la) or (lb) wherein X is a fluorine containing moiety, a Si -Si 8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and all other variables are as defined herein.

IPC Classes  ?

• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C08G 64/00 - Macromolecular compounds obtained by reactions forming a carbonic ester link in the main chain of the macromolecule
• C08F 293/00 - Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule

Abstract

To provide a positive type photosensitive composition capable of forming a pattern of high resolution, of high heat resistance and of high transparency without emitting harmful volatile substances such as benzene, also capable of reducing pattern defects caused by development residues, by undissolved residues, or by reattached hardly-soluble trace left in pattern formation, and further capable of being excellent in storage stability.The present invention provides a positive type photosensitive siloxane composition comprising : a polysiloxane having a phenyl group, a diazonaphthoquinone derivative, a hydrate or solvate of a photo base-generator having a particular nitrogen-containing hetero-cyclic structure, and an organic solvent.

IPC Classes  ?

• G03F 7/004 - Photosensitive materials
• G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
• G03F 7/075 - Silicon-containing compounds

Abstract

The present invention relates to silazane-siloxane random copolymers as well as their production and their uses, particularly in LEDs.

IPC Classes  ?

• C08G 77/54 - Nitrogen-containing linkages

Abstract

To provide a negative type photosensitive composition curable at a low temperature and capable of forming a cured film excellent in transparency, in chemical resistance and in environmental durability, and also to provide a pattern-formation method employing the composition. [Means] The present invention provides a negative type photosensitive composition comprising : an alkali-soluble resin, a compound having two or more (meth)acryloyloxy groups, a polysiloxane, a polymerization initiator, and a solvent. The alkali-soluble resin is a polymer comprising a carboxyl-containing polymerization unit and an alkoxysilyl-containing polymerization unit.

IPC Classes  ?

• G03F 7/075 - Silicon-containing compounds
• G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

The present invention relates to a polymer, composition, the forming of a sacrificial layer and a method for producing a semiconductor device comprising a step during which a pattern is made using a photoresist by the photolithography method.

IPC Classes  ?

• C08G 61/02 - Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
• C08G 61/12 - Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
• C08G 8/02 - Condensation polymers of aldehydes or ketones with phenols only of ketones
• C08G 10/00 - Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
• C09D 161/00 - Coating compositions based on condensation polymers of aldehydes or ketonesCoating compositions based on derivatives of such polymers
• C09D 165/00 - Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chainCoating compositions based on derivatives of such polymers
• G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• G03F 7/26 - Processing photosensitive materialsApparatus therefor
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

[Problem] To provide a surface treatment composition having excellent coating properties and also having capabilities of improving heat resistance of a resist pattern and of making a resist pattern less soluble in a solvent; a resist pattern-surface treatment method using the composition; and a resist pattern formation method using the composition. [Solution] The present invention provides a surface treatment composition comprising a solvent and a polysiloxane compound soluble in the solvent. A silicon atom which is constituent atom of the polysiloxane connects to a nitrogen-substituted hydrocarbon group provided that the silicon atom directly binds to a carbon atom in the hydrocarbon group. The invention also provides a resist pattern-surface treatment method using the composition and a resist pattern formation method using the composition.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

A composition crosslinkable by broad band UV radiation, which after cross- linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm. The present invention also encompasses a process comprising steps a), b) and c) a) coating the composition of claim 1 on a substrate; b) cross-linking the entire coating by irradiation with broadband UV exposure; c) forming a pattern in the cross-linked coating by cold laser ablating with a UV excimer laser emitting between 222 nm and 308 nm. Finally the present invention also encompasses The present invention also encompasses a process comprising steps a'), b') c') and d') a) coating the composition of claim 1 on a substrate; b) cross-linking part of the coating by irradiation with broadband UV exposure through a mask; c) developing the coating with aqueous base removing the unexposed areas of the film, thereby forming a first pattern; d) forming a second pattern in the first pattern by laser cold laser ablating of the first pattern with a UV excimer laser emitting between 222 nm and 308 nm.

IPC Classes  ?

• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/004 - Photosensitive materials
• G03F 7/36 - Imagewise removal not covered by groups , e.g. using gas streams, using plasma
• G03F 7/38 - Treatment before imagewise removal, e.g. prebaking
• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A1, A2, and A3 are independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; X1 and X2 are individually selected organic spacers; P1 is an organic polymer repeat unit moiety derived from a monomer containing a single polymerizable olefinic carbon double bound, and P2 is an end group moiety derived from a monomer containing a single polymerizable olefinic carbon double bound, and (formula AA) represents a direct valence bond to the linear polymer. The invention also relates to using this novel coating composition to form a grafted polymer film on a substrate.

IPC Classes  ?

• C09D 133/08 - Homopolymers or copolymers of acrylic acid esters
• C09D 135/06 - Copolymers with vinyl aromatic monomers

Abstract

Compositions having a high metal content comprising a metal salt solution, a stabilizer and one or more optional additives, wherein the metal salt solution comprises a metal ion, a counter ion and a solvent. The compositions are useful for forming films on substrates in the manufacture of solid state and integrated circuit devices.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• C09D 1/00 - Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
• C09D 5/00 - Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects producedFilling pastes

Abstract

The present invention relates to a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer comprises at least one structural unit of a nitrogen heteroaromatic ring system.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• C08L 39/04 - Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member

Abstract

[Problem] To provide a high heat resistance resist composition and a pattern formation method using the composition. [Solution] The present invention provides a chemically amplified negative-type resist composition comprising a particular polymer and a particular crosslinking agent, and this composition makes it possible to form a resist pattern of high sensitivity, of excellent resolution and of strong heat-resistance.

IPC Classes  ?

• G03F 7/004 - Photosensitive materials
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/20 - ExposureApparatus therefor
• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

The present invention relates to a method for producing silazane-siloxa copolymers and the use of such copolymers, particularly in LEDs.

IPC Classes  ?

• C08G 77/54 - Nitrogen-containing linkages

Abstract

The present invention relates to novel copolymers containing cross-linkable and graft- able moieties, novel compositions comprised of these novel copolymers and a solvent, and methods for using these novel compositions to form neutral layer films which are both cross-linked and grafted on the substrate which are used in processes for aligning microdomains of block copolymers (BCP) on this neutral layer coated substrate such as self-assembly and directed self-assembly. The novel compositions are comprised of at least one novel random copolymer comprised of least one unit of structure (1), at least one unit of structure (2) at least one unit of structure (3) one ∼∼∼ H end group and one end group having structure (1'); where R1 is selected from the group consisting of a C1-C8 alkyl, C2-C8 fluoroalkyl, C4- C-8 partially fluorinated alkyl moiety, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl moiety and d-C-e fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, d-C-e alkyl and a d-C-e fluoroalkyl and m ranges from 1 to 3, and n' ranges from 1 to 5, and n" ranges from 1 to 5, n'" ranges from 1 to 5, R7 is a C1 to C8 alkyl and X is -CN, or an alkyloxycarbonyl moiety R8-0-(C=0)- where Re is a C1 to C8 alkyl and ∼∼∼ represent the attachment point of the end group to the polymer. The novel polymers, compositions and processes are useful for fabrication of electronic devices.

IPC Classes  ?

• B82Y 10/00 - Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• B82Y 40/00 - Manufacture or treatment of nanostructures
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• C08F 212/08 - Styrene
• C08F 212/32 - Monomers containing only one unsaturated aliphatic radical containing two or more rings
• C08F 4/04 - Azo-compounds
• C09D 125/14 - Copolymers of styrene with unsaturated esters
• C09D 125/16 - Homopolymers or copolymers of alkyl- substituted styrenes

Abstract

The present invention relates to a photosensitive composition, and a color conversion film. The present invention further relates to a use of the photosensitive composition in a color conversion film fabrication process, and to a use of the color conversion film in an optical device. The invention further more relates to an optical device comprising the color conversion film and method for preparing the color conversion film and the optical device.

IPC Classes  ?

• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor
• G03F 7/004 - Photosensitive materials
• G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
• G03F 7/105 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
• B82Y 20/00 - Nanooptics, e.g. quantum optics or photonic crystals

Abstract

[Problem] To provide an optical functional film having less light reflection and having less wavelength dependency of transmittance, and a method for manufacturing the same. [Means for Solution] An optical functional film, wherein a refractive index nΑ of one surface A of the optical functional film to light is larger than a refractive index nB of the other side surface B to light, and the refractive indices to light decreases gradually from the surface A to the surface B. The optical functional film can be manufactured by conducting multi-layer coating using compositions comprising two kinds of polysiloxane and of solvent on a substrate, compatibilizing the contacting parts of two layers, and thereafter heating them to cure.

IPC Classes  ?

• G02B 1/111 - Anti-reflection coatings using layers comprising organic materials
• C03C 3/076 - Glass compositions containing silica with 40% to 90% silica by weight

Abstract

[Problem] To provide a composition for forming a coating layer having excellent gas barrier performance and a method of forming the coating layer. [Means for Solution] A composition for forming a coating film comprising a specific silicon compound which reacts with a polysilazane by exposure, a polysilazane and an organic solvent, and a method for forming a coating layer comprising coating the composition on a substrate and exposing.

IPC Classes  ?

• C08G 77/52 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
• C08G 77/54 - Nitrogen-containing linkages
• C08G 77/60 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon in which all the silicon atoms are connected by linkages other than oxygen atoms
• C08G 77/62 - Nitrogen atoms
• C09D 183/14 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• C08G 77/50 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
• C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• C08L 83/16 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

The present invention is a charge complexing chemical composition that protects metal during polymer removal. The polymer coatings include crosslinked systems by chemical-amplification and photoacid generated (PAG) means as in epoxies. The system includes a solvent, a charge complexing additive, and an acid that creates a protective complex for sensitive metals during the dissolving and rinsing practice needed for processing microelectronic parts. The composition can be utilized with a method for removing partial and fully cured crosslinked coatings that originate from chemical amplification or PAG-epoxy photoimageable coatings.

IPC Classes  ?

• G03F 7/42 - Stripping or agents therefor

Abstract

The present invention relates to a photosensitive composition comprising at least one nanosized fluorescent material and polysiloxane, to a color conversion film, and to a use of the color conversion film in an optical device. The invention further relates to an optical device comprising the color conversion film and a method for preparing the color conversion film and the optical device.

IPC Classes  ?

• G03F 7/004 - Photosensitive materials
• G03F 7/075 - Silicon-containing compounds

Abstract

The present invention relates to a novel block copolymer of structure 1, wherein, A -is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B. The invention also relates to a composition comprising the novel copolymer and its use in direct self- assembly processes.

IPC Classes  ?

• C08F 293/00 - Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites

Abstract

The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.

IPC Classes  ?

• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

To provide a composition for an underlayer, which can form an underlayer having flattened surface. [Means for Solution] A composition for forming an underlayer, comprising a polymer having a repeating unit containing nitrogen and a solvent. An underlayer is formed by coating this composition on a substrate, preferably baking in an inert atmosphere, and then baking in the air containing oxygen.

IPC Classes  ?

• C09D 179/02 - Polyamines
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

Provided are: a positive photosensitive siloxane composition which allows a film formed therefrom to have high heat resistance, high strength, and high crack resistance; an active matrix substrate with which no by-products are generated, defect occurrence is suppressed, an interlayer insulating film is easily formed at low cost, and transmittance is good; a display device provided with the active matrix substrate; and a method for producing the active matrix substrate. An active matrix substrate 30 has, on an insulating substrate 10, a plurality of gate wires 11 provided so as to extend in parallel to each other, and a plurality of source wires 12 provided so as to extend in parallel to each other in a direction intersecting with the respective gate wires 11. An interlayer insulating film 14 and a gate insulating film 15 are interposed below the source wires 12 at a portion including the portion where the gate wires 11 and the source wires 12 intersect. The interlayer insulating film 14 is formed using a positive photosensitive siloxane composition without using a resist.

IPC Classes  ?

• G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
• G02F 1/1333 - Constructional arrangements
• G02F 1/1368 - Active matrix addressed cells in which the switching element is a three-electrode device
• G03F 7/075 - Silicon-containing compounds

Abstract

The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where R1 is hydrogen or C1-C4 alkyl, R2 is selected from a group chosen from hydrogen, C1-C4 alkyl, C1-C4 alkoxy and halide, R3 is selected from a group chosen from hydrogen, C1-C4 alkyl and C1-C4 fluoroalkyl, and R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently chosen from a C1-C4 alkyl and n= 1-6. The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

IPC Classes  ?

• C08L 53/00 - Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bondsCompositions of derivatives of such polymers
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• C08F 8/42 - Introducing metal atoms or metal-containing groups
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• C08F 293/00 - Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
• C08F 230/08 - Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon

Abstract

The present invention relates to a two novel processes, "Dual Coating Process and Single Coating Process," for forming an array of via's by employing a graphoepitaxy approach, where an array of pillars the surface of the pillars has been modified by the formation of a hydrophobic poly(vinyl aryl) brush at the surface of the pillars. The present invention also relates to a composition comprising a poly(vinyl aryl) hydrophopic polymer brush precursor terminated at one chain end with a reactive functional group, a diblock copolymer comprising an etch resistant hydrophobic block and a highly etchable hydrophilic block, a thermal acid generator and a solvent.

IPC Classes  ?

• B81C 1/00 - Manufacture or treatment of devices or systems in or on a substrate

Abstract

[Problem] To provide a composition, and a method for forming a pattern using the same, with which it is possible to improve the surface roughness of a resist pattern. [Solution] Provided are: a composition containing a specific nitrogen-containing compound, an anionic surfactant including a sulfo group, and water; and a method for forming a pattern that includes a step applicable to a resist pattern in which the composition has been developed and then dried.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

The invention relates to the use of a hybrid material containing: a) an organopolysilazane material and b) at least one surface-modified nanoscale inorganic oxide as coating material for producing transparent layers having a thickness of less than 500 μιτι in optoelectronic components.

IPC Classes  ?

• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• C08L 83/16 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

[Problem] To provide a sacrificial film composition having excellent heat resistance and storage stability, and a method for manufacturing a semiconductor device using same. [Solution] A sacrificial film composition which comprises a solvent and a polymer including a repeating unit containing nitrogen atoms having lone pairs, and has a very low content of specified transition metal ions; and a method for manufacturing a semiconductor device having a porous material using said composition as a sacrificial material.

IPC Classes  ?

• H01L 21/312 - Organic layers, e.g. photoresist
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Abstract

[Problem] To provide a fluid dispersion obtained by highly dispersing, in an organic carrier fluid, surface-modified silica nanoparticles having high transparency and storage stability. [Solution] A method for producing surface-modified silica nanoparticles, said method comprising: a step for preparing a first silica-nanoparticle fluid dispersion that includes silica nanoparticles and an aqueous carrier fluid; a step for obtaining a second silica-nanoparticle fluid dispersion by substituting the aqueous carrier fluid in the first silica-nanoparticle fluid dispersion with an organic carrier fluid that includes at least one selected from cyclic esters and cyclic amides; and a step for adding, to the second silica-nanoparticle fluid dispersion, a silane coupling agent represented by formula (1) (in the formula, R1 are each independently a C1-C20 hydrocarbon group, and R2 is a C1-C3 hydrocarbon group) so as to modify the surface of the silica nanoparticles.

IPC Classes  ?

• C01B 33/18 - Preparation of finely divided silica neither in sol nor in gel formAfter-treatment thereof
• C01B 33/145 - Preparation of hydroorganosols, organosols or dispersions in an organic medium
• C09C 1/30 - Silicic acid
• C09C 3/12 - Treatment with organosilicon compounds

Abstract

[Problem] TO provide a void forming composition whereby a sacrificial region comprising a sacrificial material completely decomposed and vaporized at a desired temperature can be formed, and a method for manufacturing a semiconductor device which uses the void forming composition. [Solution] A void forming composition characterized by including a solvent and a polymer including five or more of at least one type of repeating units represented by formula (1) or formula (2) (In the formulas, Ar1, Ar2, and Ar2’ are each independently an unsubstituted or substituted aromatic group, and L1 through L2 are each independently selected from the group consisting of an oxygen atom, a sulfur atom, an alkyl, a sulfone, an amide, a ketone, or general formula (3) (in which Ar3 is an aromatic group, and L3 is a trivalent atom selected from the group consisting of nitrogen, boron, and phosphorus).)

IPC Classes  ?

• C08L 65/00 - Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chainCompositions of derivatives of such polymers
• C08G 61/12 - Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
• H01L 21/312 - Organic layers, e.g. photoresist
• H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
• H01L 23/532 - Arrangements for conducting electric current within the device in operation from one component to another including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Abstract

The present invention relates to a novel absorbing antireflective coating composition comprising a novel crosslinkable polymer comprising at least one repeat unit (A) having structure (1), at least one repeat unit (B) having a structure (2), and at least one repeat unit (C) having structure (3) where D is a direct valence bound or C(R1)(R2) methylene moiety where R1 and R2 are independently H, C1-C8 alkyl, C3-C24 cycloalkyl or C6-C24 aryl; Ari, Arii, Ariii and Ariv are independently phenylenic and naphthalenic moiety, R3 and R4 are independently hydrogen or C1-C8 alkyl; and R5 and R6 are independently hydrogen or C1-C8 alkyl; and a solvent. The invention also relates to a process for forming an image using the novel antireflective coating composition.

IPC Classes  ?

• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

A copolymerized polysilazane comprising at least repeating units represented by general formula (I): -Si(R1)(R2)-NR3- and repeating units represented by general formula (II): -Si(R1)(R2)-NH- (in the formulas, R1 and R2 each independently represent a hydrogen atom, hydrocarbon group, hydrocarbon group-containing silyl group, hydrocarbon group-containing amino group, or hydrocarbon oxy group, and R3 represents an alkyl group, alkenyl group, alkoxy group, cycloalkyl group, aryl group or alkyl silyl group), and the NR3/SiH1,2 ratio (SiH1,2 represents the total amount of SiH1 and SiH2) is 0.005-0.3. Said copolymerized polysilazane can be manufactured by reacting Si(R1)(R2)X2 (in the formula, X represents a halogen atom) with a primary amine compound: R3NH2 and then reacting with ammonia, and is able to form a siliceous film that has withstand voltage characteristics and solvent resistance by firing at a low temperature.

IPC Classes  ?

• C08G 77/62 - Nitrogen atoms
• C01B 33/12 - SilicaHydrates thereof, e.g. lepidoic silicic acid
• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• H01L 21/312 - Organic layers, e.g. photoresist

Abstract

A hybrid material for light emitting diodes, comprising a) an organopolysilazane material, comprising repeating units of formulae (I) [-SiR1R2 - NR3-]x and (II) [-SiHR4- NR5-]y wherein the symbols and indices have the following meanings: R1 is C2-C6-alkenyl or C4-C6-alkadienyl; R2 is H or an organic group; R3 is H or an organic group; R4 is H or an organic group; R5 is H or an organic group; x is 0.001 to 0.2; and y is 2x to (1 -x), with the proviso that x+y≤1 and that y can be 0 if R2 is H, and b) inorganic nanoparticles having a mean diameter in the range of from 1 to 30 nm, which are surface modified with a capping agent comprising a C1-C18-alkyl and/or C1-C18-alkenyl group, is useful as encapsulation material for LEDs.

IPC Classes  ?

• C08K 3/22 - OxidesHydroxides of metals
• C08K 9/06 - Ingredients treated with organic substances with silicon-containing compounds
• H01L 33/52 - Encapsulations
• H01L 23/29 - Encapsulation, e.g. encapsulating layers, coatings characterised by the material

Abstract

The present invention relates to novel compositions comprising a metal component selected from a group chosen from at least one polyoxometalate, at least one heteropolyoxometalate and a mixture thereof; and, at least one organic component. The present invention also relates to methods of preparing the nanorod arrays and the nanorod materials and films. The present invention also relates to novel compositions to generate metal-oxide rich films, and also relates to processes for via or trench filling, reverse via or trench filling and imaging with under layers. The materials are useful in wide range of manufacturing applications in many industries, including the semiconductor devices, electro-optical devices and energy storage industry.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• G03F 7/004 - Photosensitive materials

Abstract

Disclosed herein is an underlayer composition, wherein the underlayer is typically used for promoting the formation of self assembled structures, and wherein the underlayer formulation comprises: (a) a polymer comprising at least one monomer repeat unit having the structure (I) wherein X is a crosslinking group chosen from formulae (II), (III), (IV), (V) and wherein n is 0-5, p is 0-5, q is 1-2, m is 1-2 and R is H, C1-C4alkyl or tri (C1- C4alkyl)silyl; (b) at least one thermal acid generator; and (c) a solvent. The invention further relates to methods of making and using the composition.

IPC Classes  ?

• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

Abstract

A heat- or photo-curable composition comprising: a polysiloxane which is produced by reacting a silicon compound (i) represented by the formula: R1nSi(X)4-n (wherein R1 represents an alkyl group, an aryl group or the like; X represents a chlorine atom or an alkoxy group; and n represents 0 to 2) with a silicon compound (ii) represented by formula (b) or (c) (wherein R2 to R7 independently represent an alkyl group or the like; M1 and M2 independently represent an arylene group, an alkylene group or the like; and Y1 to Y6 independently represent a chlorine atom or an alkoxy group) in the presence of an alkali catalyst or an acid catalyst; a polymerization initiator which enables the generation of an acid or a base by the action of heat or light; and a solvent. The composition enables the formation of a thick film. When the composition is applied onto a substrate, is then heated or exposed to light, is then developed if necessary, and is then heated and burned at a low temperature, a cured film can be formed.

IPC Classes  ?

• C08L 83/14 - Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon onlyCompositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• C09D 183/14 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• G03F 7/004 - Photosensitive materials
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/075 - Silicon-containing compounds

Abstract

Disclosed herein is a formulation for depositing a cured underlayer for promoting the formation of self assembled structures. The underlayer comprises: (a) a polymer comprising at least one pendant vinyl ether monomer repeat unit having the structure, (I): wherein R is chosen from H, C1-C4 alkyl, or halogen, and W is a divalent group chosen from C1-C6 alkylene, C6-C20 arylene, benzylene, or C2-C20 alkyleneoxyalkylene; (ii) optional thermal acid generator; and (c) a solvent. The invention also relates to processes of forming a pattern using the underlayer.

IPC Classes  ?

• C08F 220/14 - Methyl esters

Abstract

[Problem] To provide a film-forming composition and a film-forming method with which it is possible to form a film having excellent gas barrier performance. [Solution] Disclosed is a film-forming composition comprising: a polysiloxane that does not include a hydroxyl group or a carboxyl group; a polysilazane; and an organic solvent. Also disclosed is a film-forming method comprising: coating a substrate with said composition; and exposing the same to light.

IPC Classes  ?

• C09D 183/04 - Polysiloxanes
• C08J 7/04 - Coating
• C09D 183/14 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms

Abstract

The present invention relates to novel, soluble, multi-ligand-substituted metal oxide compounds to form metal oxide films with improved stability as well as compositions made from them and methods of their use. Specifically, the invention pertains to a compounds having structure (I), wherein M is a metal and n is 1 to 20, and wherein at least one of R1, R2, R3, and R4 is i) and at least at least one of R1, R2, R3, and R4 is ii), where i) is a silicon bearing organic moiety having at least 2 carbons, and ii) is an organic moiety. The invention also relates to spin-coatable composition of compounds of structure (I) dissolved into a solvent. The present invention further relates to processes using this spin coatable composition to form a coating on a patterned substrate.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
• C08G 77/58 - Metal-containing linkages
• C08G 79/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon

Abstract

This substrate processing method comprises: a step wherein a substrate, which is provided with a prebaked film that has a silazane bond, is carried into a process chamber; a modification step wherein the substrate is heated to a first temperature and a processing gas is supplied to the substrate; and a drying step wherein the substrate is heated at a second temperature that is higher than the first temperature but not higher than the temperature of the prebaking.

IPC Classes  ?

• H01L 21/312 - Organic layers, e.g. photoresist
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/304 - Mechanical treatment, e.g. grinding, polishing, cutting
• H01L 21/31 - Treatment of semiconductor bodies using processes or apparatus not provided for in groups to form insulating layers thereon, e.g. for masking or by using photolithographic techniquesAfter-treatment of these layersSelection of materials for these layers

Abstract

The invention relates to the use of specific organopolysilazanes as an encapsulation material for light emitting diodes (LED).The organopolysilazane polymers act as insulating filling materials and are stable over temperature and over exposure to ambient UV radiation. The encapsulating material has good thermal stability against discoloration to yellow by aging even at high temperatures which is a key factor for the long lifetime of an LED encapsulant and the LED performance.

IPC Classes  ?

• C08G 77/62 - Nitrogen atoms
• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/312 - Organic layers, e.g. photoresist
• H01L 33/56 - Materials, e.g. epoxy or silicone resin

Abstract

[Problem] To provide a coating composition which places minimal load on the environment, and with which a cured film of high corrosion resistance, soiling resistance, and transparency can be obtained. [Solution] A coating composition characterized by containing (A) a polysilazane having alkoxy-modified silane groups on side chains, (B) a non-reactive polydialkylsiloxane, and (C) a reactive polydialkylsiloxane; and a cured film obtained by curing thereof.

IPC Classes  ?

• C09D 183/16 - Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon onlyCoating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
• B32B 27/00 - Layered products essentially comprising synthetic resin
• B32B 27/30 - Layered products essentially comprising synthetic resin comprising vinyl resinLayered products essentially comprising synthetic resin comprising acrylic resin
• C09D 4/02 - Acrylmonomers
• C09D 5/16 - Anti-fouling paintsUnderwater paints
• C09D 7/12 - Other additives
• C09D 183/04 - Polysiloxanes

Abstract

The present disclosure relates to spin-on compositions containing at least one metal oxide dicarboxylate and an organic solvent into which the metal oxide dicarboxylate is soluble or colloidally stable. The dicarboxylate is capable of decomposing during heat treatment to give a cured metal oxide film. The present disclosure also relates to method of using the spin-on compositions.

IPC Classes  ?

• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

[Problem] To provide: a dendrimer compound which can improve critical dimension uniformity and depth of focus margin; and a composition which enables the formation of an underlayer antireflective film. [Solution] A dendrimer compound in which an aromatic group substituted by a halogenated alkyl group and at least two OH groups are bound to the terminal of a backbone having an ether bond or a thioether bond; and a composition for forming an underlayer antireflective film, which contains the dendrimer compound.

IPC Classes  ?

• C08G 65/329 - Polymers modified by chemical after-treatment with organic compounds
• C08G 63/91 - Polymers modified by chemical after-treatment
• G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where R1 to R5 are independently chosen from the group consisting of H and C1-C6 alkyl; R6 is chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C1-C8) and fluoroalkyl (C1-C8) and W is a C2-C6 alkylene spacer.

IPC Classes  ?

• C08F 220/34 - Esters containing nitrogen
• C08F 226/10 - N-Vinyl-pyrrolidone
• C08F 8/44 - Preparation of metal salts or ammonium salts
• C09D 133/14 - Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
• C09D 139/06 - Homopolymers or copolymers of N-vinyl-pyrrolidones
• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

Disclosed and claimed herein is a template for directing a pattern in a block copolymer film and the process of making the pattern.

IPC Classes  ?

• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

Abstract

A resist pattern that is free from pattern collapse, pattern defects, line width variation and pattern melting is formed by rinsing a fine resist pattern, which is obtained by exposing and developing a photosensitive resin, with use of a rinsing liquid for lithography containing a nonionic surfactant represented by formula (I) and water. (In the formula, R1 and R2 may be the same or different and each represents a hydrogen atom or a methyl group; R3 and R4 may be the same or different and each represents a hydrogen atom, a methyl group or an ethyl group; R5 represents a hydrocarbon group having 2-5 carbon atoms and containing a double bond or a triple bond, or a phenylene group; and R6 and R7 may be the same or different and each represents a hydrogen atom or a methyl group.)

IPC Classes  ?

• G03F 7/32 - Liquid compositions therefor, e.g. developers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

[Problem] To provide: a composition for forming an upper layer film, which enables the formation of a pattern that has excellent roughness and pattern shape in a pattern forming method by means of extreme ultraviolet light exposure; and a pattern forming method which uses this composition for forming an upper layer film. [Solution] A composition for forming an upper layer film, which is characterized by containing a triphenylene derivative having a hydrophilic group and a solvent; and a method wherein a pattern is formed by applying this composition to a resist surface and then exposing and developing this composition. This composition may additionally contain a polymer.

IPC Classes  ?

• G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• C08F 20/10 - Esters
• C08G 63/133 - Hydroxy compounds containing aromatic rings
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

[Problem] To provide a composition which can form a fine negative photoresist pattern exhibiting little surface roughness, and a pattern formation method which uses the composition. [Solution] A composition for forming a fine resist pattern is used in a positive resist pattern formation method, which uses a chemically amplified positive photoresist composition, in order to reduce the size of the pattern by increasing the thickness the resist pattern, the composition being characterized by containing a polymer having an amino group in the repeating units thereof, a solvent, and an acid. The composition is coated on a positive photoresist pattern after the same has been developed, and then heated, thus enabling the formation of a fine pattern.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

[Problem] To provide a composition which can form a fine negative photoresist pattern which does not have problems of surface roughness, bridge defects, lack of resolution, etc., and to provide a pattern forming method using same. [Solution] Given a negative resist pattern formed using a chemically amplified resist composition, this fine pattern-forming composition is used to make a pattern finer by being applied to the negative resist pattern to thicken the resist pattern. This composition contains a solvent, and a polymer mixture or polymer including an amino group in the repeating unit, and further either contains a specific amount of acid, or exhibits a specific pH. Further, the polymer mixture contains multiple polymers having a 3 or greater HSP distance determined from the Hansen solubility parameters. This composition is coated onto a negative photoresist pattern obtained by developing with an organic solvent developer and is heated, thereby forming a fine pattern.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable
• G03F 7/32 - Liquid compositions therefor, e.g. developers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

[Problem] To provide a composite of metal oxide nanoparticles and a silsesquioxane polymer in which aggregation of metal oxides, etc. does not occur during a curing process and which is capable of forming a high quality cured film in which the metal oxides are evenly dispersed. [Solution] A method for producing a composite of metal oxide nanoparticles and a silsesquioxane polymer, and a composite produced from said method, wherein a silsesquioxane polymer having a silanol group on a terminal or a silane monomer is reacted with metal oxide nanoparticles having a hydroxyl group or an alkoxy group on the surface in an aqueous solvent under the presence of a phase transfer catalyst.

IPC Classes  ?

• C08G 79/00 - Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon
• B82Y 30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
• B82Y 40/00 - Manufacture or treatment of nanostructures
• C08G 77/58 - Metal-containing linkages
• C08K 3/22 - OxidesHydroxides of metals
• C08L 83/06 - Polysiloxanes containing silicon bound to oxygen-containing groups

Abstract

[Problem] To provide a composite of silicon oxide nanoparticles and a silsesquioxane polymer which is capable of forming a cured film with a low refractive index at low cost. [Solution] Provided are a method for producing a composite of silicon oxide nanoparticles and a silsesquioxane polymer and a composite produced from said method, wherein a silsesquioxane polymer having a silanol group on a terminal or a silane monomer is reacted with silicon oxide nanoparticles having a hydroxyl group or an alkoxy group on the surface in a mixed solvent of an aqueous solvent and an organic solvent under the presence of a phase transfer catalyst.

IPC Classes  ?

• C08G 77/04 - Polysiloxanes
• C08K 3/36 - Silica
• C08L 83/06 - Polysiloxanes containing silicon bound to oxygen-containing groups

Abstract

[Problem] To provide a composition for forming an overlay film and a pattern formation method using said composition, with which a pattern exhibiting excellent roughness and an excellent pattern shape can be formed in a pattern formation method using extreme ultraviolet light exposure. [Solution] This composition for forming an overlay film is characterized by including a solvent, and a fullerene derivative having a hydrophilic group. Furthermore, provided is a method in which said composition is applied to a resist surface, exposed to light, and developed, thereby forming a pattern. A polymer can also be included in said composition.

IPC Classes  ?

• G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

Disclosed herein is a photosensitive composition comprising a heterocyclic thiol compound or tautomeric form thereof and its method of use on a substrate,which may include a chalcophile substrate.

IPC Classes  ?

• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

The present disclosure relates to soluble, multi-ligand-substituted metal compounds with improved stability as well as compositions made from them and methods of their use.

IPC Classes  ?

• C07F 7/00 - Compounds containing elements of Groups 4 or 14 of the Periodic Table
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

A positive-acting photosensitive siloxane composition which comprises (I) two or more polysiloxanes that differ in the rate of dissolution in aqueous tetramethylammonium hydroxide (TMAH) solutions, (II) a polysiloxane that gives a film which after prebaking has a rate of dissolution in 2.38 wt% aqueous TMAH solution of 50-1,000 Å/sec and that has a group soluble in aqueous TMAH solutions, other than silanol, (III) a diazonaphthoquinone derivative, and (IV) a solvent.

IPC Classes  ?

• G03F 7/023 - Macromolecular quinonediazidesMacromolecular additives, e.g. binders
• G03F 7/075 - Silicon-containing compounds

Abstract

This aromatic imide compound having improved solubility and improved sensitivity toward visible light such as g-rays and h-rays is represented by formula (1) (In the formula: R1 represents a C1-7 haloalkyl group or haloaryl group; R2 represents a substituted or unsubstituted aliphatic-group- or aromatic-group-containing group which may contain a heteroatom; R3 represents a halogen atom or a hydrocarbon group, m represents an integer of 0 or greater; n represents an integer of 0 or greater; and the sum of m and n is 1 to 6, inclusive.). It is possible to obtain this compound by, for example, producing an anhydrous naphthalic acid substituted with an aromatic-group-containing group by reacting a halogenated naphthalic acid anhydride with an aromatic-group-containing hydrocarbon such as ethynylbenzene, reacting the product thereof with hydroxylamine hydrochloride, N-hydroxy-imidizating the product of the reaction, and then reacting the product thereof with a sulfonyl halide such as trifluoro sulfonyl chloride.

IPC Classes  ?

• C07D 221/14 - Aza-phenalenes, e.g. 1,8-naphthalimide
• C07D 409/06 - Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a carbon chain containing only aliphatic carbon atoms
• G03F 7/004 - Photosensitive materials

Abstract

[Problem] To provide a dense silicic film and a method for forming the film. [Solution] A method for forming a dense silicic film which comprises applying, on a substrate, a composition for coating film formation which contains a polymer having silazane bonds, thereby forming a film, irradiating the film with light having a maximum peak wavelength of 160-179 nm, and successively irradiating the film with light having a maximum wavelength longer by 10-70 nm than the maximum peak wavelength of the light with which the film has been irradiated; and a dense silicic film formed by the method.

IPC Classes  ?

• B05D 7/24 - Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
• B05D 3/06 - Pretreatment of surfaces to which liquids or other fluent materials are to be appliedAfter-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
• B32B 9/00 - Layered products essentially comprising a particular substance not covered by groups
• C01B 21/068 - Binary compounds of nitrogen with metals, with silicon, or with boron with silicon
• C08J 7/00 - Chemical treatment or coating of shaped articles made of macromolecular substances

Abstract

[Problem] To provide a composition for forming a fine pattern whereby a pattern with a high dry etching tolerance can be formed, and a pattern formation method using the same wherein pipe clogging hardly occurs in the production process. [Solution] A composition for forming a fine pattern to be used for thickening a resist pattern to microfabricate a pattern in a method for forming a negative type resist pattern using a chemical amplification type resist composition, said composition comprising a polymer that contains a repeating unit having a hydroxyaryl group and an organic solvent that would not solubilize the negative type resist pattern, and a pattern formation method using the same. In the pattern formation method, the resist composition and the composition for forming a fine pattern thereof are coated by the same coating device so that pipe clogging can be prevented.

IPC Classes  ?

• G03F 7/40 - Treatment after imagewise removal, e.g. baking
• C08F 12/24 - Phenols or alcohols
• C08F 20/30 - Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen- containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. Each of E1 to E3 is independently selected from the group consisting of carbon and nitrogen atoms, provided that at least one of them is a nitrogen atom; each of F1 to F3 is independently selected from the group consisting of oxygen and sulfur atoms; each of G1 to G3 is independently selected from the group consisting of a vinyloxy group, a N-methoxymethylamide group and a hydrogen atom, provided that at least one of them is a vinyloxy group or a N- methoxymethylamide group; and each of p1 to p3 is independently selected from integer including 0 provided that at least any two of them are at least 1 or above 1.

IPC Classes  ?

• C07D 251/38 - Sulfur atoms
• C07D 251/30 - Only oxygen atoms
• C09D 139/04 - Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
• G03F 7/09 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers

Abstract

The invention relates to a novel positive working photosensitive composition having: at least one photoacid generator; at least one novolak polymer; at least one polymer, having a polymer backbone, said polymer comprising a structure of the following formula: wherein R1 - R5 are, independently, -H or -CH3, A is a linear or branched C1-C10 alkylene group, B is a C1-C12 alkyl or alicyclic group, D is a linking group that may be a chemical bond, a carboxylate group, wherein the carbonyl carbon is bonded to the polymer backbone, or a -COOCH2- group, wherein the carbonyl carbon is bonded to the polymer backbone, Ar is a substituted or unsubstituted aromatic group or heteroaromatic group, E is a linear or branched C2-C10 alkylene group, G is an acid cleavable group. The invention further relates to a process for using the novel composition for forming an image.

IPC Classes  ?

• G03F 7/039 - Macromolecular compounds which are photodegradable, e.g. positive electron resists

Abstract

Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.

IPC Classes  ?

• C08F 220/18 - Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
• G03F 7/027 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
• G03F 7/033 - Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
• G03F 7/038 - Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

[Problem] To provide an overlay film forming composition in which in a lithography method using extreme ultraviolet there is no pattern deterioration caused by deep ultraviolet light, and in which the generation of gas during exposure can be suppressed. [Solution] An overlay film forming composition that includes a water soluble polymer comprising a hydrophilic group and a deep ultraviolet light absorbing group which absorbs light with a wavelength of 170-300 nm, and an aqueous solvent, in which the water content of the aqueous solvent is equal to or greater than 70% by weight of the total weight of the aqueous solvent. A pattern can be formed by applying the overlay film forming composition on top of the resist film, hardening the overlay film forming composition by applying heat, exposing the composition to extreme ultraviolet light, and then developing the composition.

IPC Classes  ?

• G03F 7/11 - Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• C08F 212/02 - Monomers containing only one unsaturated aliphatic radical
• C08F 220/02 - Monocarboxylic acids having less than ten carbon atomsDerivatives thereof
• H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or

Abstract

The present invention relates to a novel polymeric composition comprising a novel polymer having two or more repeat units and a terminus having the structure (1), wherein R1 represents a C1-C20 substituted or unsubstituted alkyl group, w is a number from 1-8, X is oxygen(O) or nitrogen (N), and Rd is a reactive group. The invention also relates to a process for forming a pattern using the novel polymeric composition. The invention further relates to a process of making the novel polymer.

IPC Classes  ?

• C08F 4/04 - Azo-compounds
• C08F 8/14 - Esterification
• G03F 7/00 - Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfacesMaterials therefor, e.g. comprising photoresistsApparatus specially adapted therefor

Abstract

[Problem] To provide a negative photosensitive siloxane compound which can be inorganically developed, and a method for forming a cured film using the compound. [Solution] A negative photosensitive siloxane composition comprising: polysiloxane; a silicon-containing compound having a pKa of 2.0-15.7; a photo-polymerization initiator; and a solvent. A cured film can be obtained by applying the composition to the top of a substrate, exposing same, developing same by means of an inorganic developing solution, and heating same.

IPC Classes  ?

• G03F 7/075 - Silicon-containing compounds

Abstract

[Problem] To provide a negative photosensitive siloxane compound which can be inorganically developed, and a method for forming a cured film using the compound. [Solution] A negative photosensitive siloxane composition comprising: polysiloxane; a silicon-containing compound having ureide bonds; a polymerization initiator; and a solvent. A cured film can be obtained by applying the composition to the top of a substrate, exposing same, and, without heating after the exposure, developing same.

IPC Classes  ?

• G03F 7/075 - Silicon-containing compounds
• G03F 7/004 - Photosensitive materials
• G03F 7/40 - Treatment after imagewise removal, e.g. baking

Abstract

The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using anion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.

IPC Classes  ?

• C08J 3/00 - Processes of treating or compounding macromolecular substances
• B01D 15/36 - Selective adsorption, e.g. chromatography characterised by the separation mechanism involving ionic interaction, e.g. ion-exchange, ion-pair, ion-suppression or ion-exclusion
• B01J 45/00 - Ion-exchange in which a complex or a chelate is formedUse of material as complex or chelate forming ion-exchangersTreatment of material for improving the complex or chelate forming ion-exchange properties

Abstract

This invention relates generally to silicon based photoresist compositions that can be used in forming low k dielectric constant materials suitable for use in electronic devices, methods of their use and the electronic devices made therefrom.

IPC Classes  ?

• C08L 83/04 - Polysiloxanes
• G03F 7/075 - Silicon-containing compounds
• H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
• H01L 21/312 - Organic layers, e.g. photoresist

Abstract

An inorganic polysilazane resin of the present invention has an Si/N ratio (i.e., a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si-NH and Si-Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si-Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.

IPC Classes  ?

• C01B 21/082 - Compounds containing nitrogen and non-metals
• H01L 21/316 - Inorganic layers composed of oxides or glassy oxides or oxide-based glass

Goods & Services

Chemical in liquid form used as an anti-reflective coating for photo resists for use in the electronics industry.

Goods & Services

Electrical insulating materials; electrical insulating materials for use in integrated circuits and semiconductor devices; interlayer dielectric coating materials for use in integrated circuits and semiconductor devices; electrical insulating materials in the form of film for use in the manufacture of semiconductors.