The present invention provides a method for treating a substrate. The substrate processing method according to an embodiment includes: a processing step of processing a substrate by generating a process plasma in a chamber; and a cleaning step of removing particle sources present in the chamber by generating a cleaning plasma in the chamber, wherein the process plasma is generated by exciting a fluorine-containing gas, and the cleaning plasma may be generated by exciting oxygen gas and nitrogen gas.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
2.
ABNORMALITY DETECTION METHOD OF GAS CURTAIN SYSTEM, PROGRAM STORED IN RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
The present invention provides a method for detecting whether a gas curtain system forming a gas curtain that encompasses the surface of a substrate is abnormal. The method may comprise: a data collection step of normally operating the gas curtain system so as to acquire a plurality of pieces of normal sample data, and abnormally operating the gas curtain system so as to acquire a plurality of pieces of defective sample data; and a reference time point specifying step of matching data selected from the plurality of pieces of normal sample data and the plurality of pieces of defective sample data collected in the data collection step to each other so as to derive a reference time point at which the difference in data distribution is greater than or equal to the set value.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/768 - Applying interconnections to be used for carrying current between separate components within a device
The present invention relates to a substrate processing apparatus comprising: a processing chamber having a processing space; a plasma generation chamber having a discharge space for generating plasma from a processing gas; an adapter having a guide space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed in the processing space, the guide space, or between the processing space and the guide space. The baffle assembly may comprise: a baffle plate having a plurality of baffle holes provided as passages for gas flowing between the guide space and the processing space; a coupling member for coupling the baffle plate to the processing chamber or the adapter; and a cover surrounding a coupling space in which the coupling member is located so that the coupling member is not exposed to the processing space.
Provided is a substrate processing apparatus comprising: a processing chamber in which a processing space for processing a substrate is provided; a support unit for supporting the substrate in the processing space; a plasma generation chamber which is provided outside the processing chamber, and which has a discharge space for generating plasma from processing gas; an adapter which is connected to the processing chamber and the plasma generation chamber, and which has a guide space for guiding, to the processing chamber, the plasma generated in the discharge space; and a baffle assembly disposed in the processing space or the guide space, or between the processing space and the guide space, wherein the baffle assembly includes: a baffle plate having a plurality of baffle holes by which the guide space communicates with the processing space; and an air flow guide body disposed below the baffle plate, and the air flow guide body has a guide plate which is positioned to be spaced apart from the baffle plate, and which is provided to laterally guide an air flow having passed through some of the baffle holes.
The present invention provides a substrate processing apparatus. The substrate processing apparatus may comprise: a chamber providing a processing space; a substrate support part for supporting a substrate in the processing space; and a plasma source for forming plasma that processes the substrate placed on the substrate support part, wherein the substrate support part includes: a chuck body on which the substrate is placed; a chucking electrode for chucking the substrate placed on the chuck body; and a frequency tuning unit which is electrically connected to the chucking electrode and which adjusts the frequency pass characteristic of the chucking electrode.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
6.
SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
Provided is a substrate treatment apparatus comprising: a housing having a processing space; a support unit that is disposed inside the processing space, supports a substrate, and has a fluid supply hole; a gas supply unit for supplying a process gas into the processing space; a plasma generating unit for exciting the process gas into a plasma state by generating an induced magnetic field in the processing space; and a fluid supply unit having a heat transfer gas supply line for supplying a heat transfer gas to the fluid supply hole provided in the support unit. The fluid supply unit pressurizes at least one of the inside of the fluid supply hole or the upper end of the fluid supply hole when the inside of the processing space is being cleaned.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
A substrate processing apparatus is provided. The substrate processing apparatus comprises: a housing having a processing space; a support unit which supports a substrate in the processing space; and a plasma generation unit which is positioned on one side of the housing, discharges a process gas to generate plasma, and supplies the generated plasma to the processing space, wherein the support unit comprises: a base body: a heater plate which is bonded to the upper surface of the base body by a first adhesive layer; and an electrostatic plate which is bonded to the upper surface of the heater plate by a second adhesive layer and attaches the substrate by an electrostatic force, and the electrostatic plate may have embossings which are formed to protrude from the lower surface to block plasma gas penetrating into the second adhesive layer and are in contact with the upper surface of the heater plate.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
The present invention provides a program stored in a recording medium, for selecting a reference wavelength and a reference time point for detecting an end point at which processing of a substrate by plasma is terminated. The program may perform: a data classification operation of classifying a plurality of pieces of sensor data collected by a sensor installed in a plasma chamber for processing the substrate into a first group and a second group that is a group different from the first group, wherein each piece of sensor data is data including a change in intensity of light according to time for each wavelength generated in the plasma chamber; a group selection operation of selecting a group to which a larger number of pieces of sensor data belongs from among the first group and the second group; a wavelength selection operation of selecting the reference wavelength for detecting the end point on the basis of selection sensor data that is sensor data belonging to a selection group selected in the group selection operation; and a time point selection operation of selecting the reference time point for detecting the end point on the basis of the selection sensor data.
The present invention relates to a side storage and a substrate processing apparatus including same. According to an embodiment, a side storage may include: a housing for providing an accommodation space in which a substrate is accommodated; a support body for supporting the substrate in the accommodation space; and a gas spraying unit for spraying purge gas into the accommodation space, wherein the gas spraying unit includes: a body having an inner space, the front face of which is open; a baffle plate which is positioned in the front face of the inner space and has a spraying hole formed therethrough; and a gas supply line for supplying the purge gas into the inner space, the gas spraying unit dispersing gas for purging the inside of a side storage to control a vortex therein.
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided is a substrate processing apparatus for processing a substrate, comprising: a process chamber for processing; a transfer robot for transferring the substrate to the process chamber; and an inspection unit provided on a path along which the transfer robot transfers the substrate, wherein the inspection unit measures a detection time for which the substrate is detected if the transfer robot transfers the substrate, so as to detect whether the detection time exceeds the error range of a pre-stored reference time.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/677 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for conveying, e.g. between different work stations
G01J 1/02 - Photometry, e.g. photographic exposure meter Details
The present disclosure provides a substrate processing apparatus. The substrate processing apparatus includes a chamber defining a processing space, a gas supply unit supplying a process gas to the processing space, and a support unit supporting a substrate in the processing space, wherein the support unit includes a chuck supporting the substrate, a power applying RF power to the chuck, and an ionization path through which static electricity generated in the chuck is removed.
The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.
The present invention provides a substrate processing device. The substrate processing device comprises: a pedestal which supports a substrate and which has a flow path through which a fluid for adjusting the temperature of the substrate flows; and a chiller unit for supplying the fluid to the flow path, wherein the chiller unit comprises: a first fluid supply source for supplying a first fluid of a first temperature; a second fluid supply source for supplying a second fluid of a second temperature, which is different from the first temperature; and a mixing valve which is provided downstream of the first fluid supply source and the second fluid supply source and is provided upstream of the flow path, and which adjusts the mixing ratio of the first fluid and the second fluid of a mixed fluid, the mixed fluid being a fluid in which the first fluid and the second fluid are mixed.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
F16K 11/02 - Multiple-way valves, e.g. mixing valvesPipe fittings incorporating such valvesArrangement of valves and flow lines specially adapted for mixing fluid with all movable sealing faces moving as one unit
16.
SUBSTRATE TREATMENT APPARATUS AND PLASMA GENERATION UNIT
Provided is a substrate treatment apparatus comprising: a housing which has a treatment space: a support unit which is disposed in the treatment space and supports a substrate; a gas supply unit which supplies process gas into the treatment space; and a plasma generation unit which forms an induced magnetic field in the treatment space to excite the process gas into a plasma state, wherein the plasma generation unit comprises: an antenna which has a plurality of segments arranged in series with each other and has segmented spaces formed between the segments adjacent to each other; and dielectrics which are inserted into the respective segmented spaces.
Provided is a substrate processing apparatus for processing a substrate, comprising: a housing having a processing space; a support unit which is arranged inside the processing space and which supports the substrate; a gas supply unit for supplying a process gas into the processing space; and a plasma generation unit, which forms an induced magnetic field in the processing space so as to excite the process gas into a plasma state, wherein the plasma generation unit comprises: an antenna having a plurality of segmented bodies arranged in series with each other and having a segmented space formed between the segmented bodies that are adjacent to each other; and an adjusting body which is inserted into the segmented space, and of which the location can be adjusted.
The present invention provides a method for detecting an abnormality in implementing a process performed by a substrate processing device. The method for detecting an abnormality in implementing a process comprises: a data collection step; an abnormality detection module learning step; and a process implementing abnormality detection step, wherein learning data and target data include a plasma parameter, the plasma parameter may be a parameter obtained by a component driven by the substrate processing device for generating plasma, or obtained by detecting a physical phenomenon generated by the plasma.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
19.
SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may comprise: a process treatment part which provides a treatment space where a substrate is treated; and a plasma source which generates plasma from process gas, wherein: the plasma source includes an antenna which has a coil wound in multiple turns, and a power application unit which applies high-frequency power to the coil; a first ground line is connected to one end of the coil and a second ground line is connected to the other end of the coil; and the power application unit is connected to the coil so as to apply high-frequency power directly to the coil at a position between one end and the other end of the coil.
Provided is an apparatus for processing a substrate, the apparatus for processing a substrate comprising: a chamber having a processing space: a processing space in which a substrate is processed; a chuck which supports the substrate in the processing space and is provided as a lower electrode; a gas supply unit for supplying a process gas to the processing space; a shower head which is disposed above the substrate and has a spray hole through which the process gas flows, and which is provided as an upper electrode; and a power supply unit for generating an electric field in the processing space by applying power to the chuck and the shower head, wherein the chuck comprises a support plate which supports the substrate and is provided as the lower electrode, a support shaft which supports the support plate, a conductor mounted inside the support shaft and electrically connected to the support plate, a connection assembly coupled to the support shaft and electrically connected to the conductor, and a ground line having one end electrically connected to the connection assembly and the other end grounded.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a substrate processing apparatus and a substrate processing method and, more specifically, to an apparatus for processing a substrate by replacing a dielectric plate, and to a method for replacing a dielectric plate used in the apparatus. According to an embodiment of the present invention, when a new dielectric plate is mounted on a device, the new dielectric plate can be accurately positioned at the same position as the mounting position of a previous dielectric plate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
22.
APPARATUS FOR TREATING SUBSTRATE AND SUBSTRATE INSPECTION METHOD IN LOAD LOCK CHAMBER
Provided is an apparatus for treating a substrate, the apparatus including: an equipment front end module including a first transfer robot for transferring a substrate; a transfer chamber including a second transfer robot for transferring a substrate; and a load lock chamber disposed on a transfer path along which a substrate is transferred between the transfer frame and the transfer chamber, in which the load lock chamber includes: a housing including an upper chamber having an upper space, and a lower chamber positioned below the upper chamber and having a lower space; a first rotational supporter for supporting and rotating a substrate located in the upper space; and a second rotational supporter for supporting and rotating a substrate located in the lower space, and the first rotational supporter and the second rotational supporter are used for both an alignment inspection of a substrate and a vision inspection of a substrate.
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
G01N 21/95 - Investigating the presence of flaws, defects or contamination characterised by the material or shape of the object to be examined
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
23.
FACILITY FOR TREATING GAS COMPRISING A GAS COOLING APPARATUS
A facility for treating gas includes a flow channel providing a passage through which a waste gas flows; a thermal decomposition unit for thermally decomposing the waste gas flowing through the flow channel; a quencher for cooling the waste gas passed through the thermal decomposition unit to a predetermined temperature; and a cooling chamber in communication with the flow channel such that the waste gas passed through the quencher is introduced into the cooling chamber, the cooling chamber accommodating a solid material for cooling therewithin.
B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
B01D 53/76 - Gas phase processes, e.g. by using aerosols
F28C 1/08 - Arrangements for recovering heat from exhaust steam
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first housing; a second housing combined with the first housing to define an internal space; a rotation coupling part for O fastening the first housing and the second housing to each other such that one of the first housing and the second housing is rotatable with respect to the other one of the first housing and the second housing; and a channel which supplies a fluid to the internal space or discharges the fluid from the internal space, and has at least a part thereof inserted into a pin hole formed in the rotation coupling part.
A substrate treatment apparatus is disclosed. The substrate treatment apparatus comprises: a housing; a chuck which supports a substrate; a dielectric plate which is arranged to be spaced apart from the chuck with the substrate interposed therebetween; a gas supply unit which supplies process gas for treating the edge region of the substrate with plasma; a protective cover which covers the entire bottom surface of the dielectric plate and protects the dielectric plate from the plasma; and a coupling unit which attaches/detaches the protective cover to/from the dielectric plate.
A substrate treatment apparatus is disclosed. The substrate treatment apparatus comprises: a housing which defines a treatment space; a lower electrode unit which supports a substrate; an upper electrode unit which is arranged to be spaced apart from the lower electrode unit with the substrate interposed therebetween; a gas supply unit which supplies process gas for treating an edge region of the substrate with plasma; and a protective layer which is disposed on the surface of at least a part of the lower and upper electrode units and is formed of a material having high resistance to plasma.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides a support unit. The support unit comprises a chuck body that has a mount surface on which a substrate is placed and that is made of a conductive material in which an additive to adjust thermal expansion coefficients is added to a metal, wherein the chuck body may have a dielectric coating layer formed on the surface thereof.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention relates to a substrate processing apparatus and a substrate processing method, and the technical problem to be solved is to provide a substrate processing apparatus and a substrate processing method, wherein, when center coordinates of an edge area of a bevel-etched substrate are obtained, the time required to obtain the center coordinates can be shortened. The substrate processing apparatus for inspecting a substrate having a bevel-etched area formed at the edge thereof comprises an inspection unit that sets, as inspection coordinates, at least three coordinates in the bevel-etched area of the substrate and calculates, as center coordinates of the bevel-etched area, center coordinates of a circle passing through the at least three set inspection coordinates.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
29.
PROCESS DATA PROCESSING DEVICE AND PROCESS PROCESSING METHOD
A process data processing device of the present invention comprises: a sensor unit that detects a physical size value for a time when a process is in progress; a process data recording unit that receives a physical size value for a time each time a process schedule is in progress in connection with the sensor unit, records the received physical size value for the time as process data, and records the process data cumulatively for each process schedule; and an operation unit that selects at least one set of best process data from the process data by means of a preset best process selection operation and sets a preset range value to the selected best process data as an upper threshold value and a lower threshold value of the process data.
G05B 19/42 - Recording and playback systems, i.e. in which the programme is recorded from a cycle of operations, e.g. the cycle of operations being manually controlled, after which this record is played back on the same machine
The present invention provides a method for controlling a substrate processing apparatus. The control method may comprise: a chuck movement step for moving a lower electrode to a preset height; a gap measurement step for measuring the gap between the upper surface of a substrate and a dielectric plate positioned above the lower electrode; a correction determination step for comparing the gap measured in the gap measurement step with a pre-stored process recipe to determine whether a correction operation for correcting the gap is necessary; and a correction step for moving the lower electrode so that the gap matches the process recipe when it is determined that the correction operation is necessary.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G01B 11/14 - Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
31.
UPPER ELECTRODE UNIT AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME
A substrate processing apparatus is provided. The substrate processing apparatus includes a housing having an interior space, a lower electrode unit supporting a substrate in the interior space, an upper electrode unit facing the lower electrode unit, and a gas supply unit supplying a process gas to the interior space, wherein the upper electrode unit includes a dielectric plate facing an upper surface of the substrate supported by the lower electrode unit, a support body supporting the dielectric plate, wherein the support body and the dielectric plate are combined with each other to form a buffer space and the gas supply unit supplies the process gas to the interior space via the buffer space, and a baffle ring disposed on a flow path of the process gas flowing from the buffer space to the interior space.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
Provided is a substrate processing apparatus for processing a substrate, the apparatus comprising: a chamber having an internal space; a support unit for supporting the substrate in the internal space; a gas supply unit for supplying processing gas to the internal space; a window covering the top of the internal space; a coil unit disposed above the window; a power supply unit for applying high-frequency power to the coil unit; and a magnetic regulator which is disposed above the coil unit and in which an eddy current is generated through electromagnetic induction by the coil unit.
The present invention provides a substrate processing apparatus. The substrate processing apparatus for processing a substrate may comprise: a chamber which has a processing space; a chuck which supports a substrate in the chamber; a plasma unit which generates plasma to be transferred to the substrate; and an impedance tuning unit which is connected to the chuck, wherein the impedance tuning unit comprises: an inductor; a capacitor; and at least one switch which connects the inductor selectively in series or in parallel to the capacitor.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
34.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus of the present invention comprises: a chamber which has an inner space; a substrate support unit which supports a substrate in the inner space; a gas supply unit which supplies processing gas into the inner space; a window which covers the top of the inner space; an inner coil unit which is disposed above the window; an outer coil unit which is disposed above the window and formed to have a larger diameter than the inner coil unit; a power supply unit which applies high-frequency power to the inner coil unit and the outer coil unit; and an electromagnetic isolator which reduces the magnitude of an electromagnetic field in an overlapping region where the electromagnetic field of the inner coil part overlaps the electromagnetic field of the outer coil unit.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides a method for processing a substrate having a pattern. The substrate processing method may comprise: a protection film formation step for forming a protection film on top of the pattern by using first plasma excited from a first process gas; and an etching step which is performed after the protection film formation step, and in which the substrate is etched using, on the substrate, second plasma excited from a second process gas that is different from the first process gas.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
36.
APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR ALIGNING DIELECTRIC PLATE USING THE SAME
An apparatus for treating a substrate includes a housing including an open top and a treatment space therein, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from the top, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, and an aligning unit configured to align a horizontal arrangement of the dielectric plate unit, in which a lid extending from the housing in the horizontal direction and coupled to the upper electrode unit is provided on the housing, and the aligning unit is coupled to the lid.
Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a housing defining a treatment space formed by a combination of an upper housing and a lower housing, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from a top view, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, and an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, in which the upper electrode unit is coupled to the lower housing.
The present invention provides a gap measurement jig that does not need to be regularly calibrated, and a measurement method using the jig. The gap measurement jig is used to measure the gap between upper and lower flat members facing each other and may comprise: a base member placed on the lower flat member; and a movable pin, inserted in the base member, pressed down by the upper flat member on contact therewith.
G01B 5/14 - Measuring arrangements characterised by the use of mechanical techniques for measuring distance or clearance between spaced objects or spaced apertures
G01B 5/00 - Measuring arrangements characterised by the use of mechanical techniques
39.
SUBSTRATE PROCESSING DEVICE, AND SUBSTRATE INSPECTION METHOD IN LOAD LOCK CHAMBER
The present invention provides a device for processing a substrate. The device for processing a substrate comprises: a front end module having a first transport robot for transporting the substrate; a transfer chamber having a second transport robot for transporting the substrate; and a load lock chamber disposed on a transport path through which the substrate is transported, between a transport frame and the transfer chamber. The load lock chamber comprises: a housing comprising a top chamber having a top space and a bottom chamber disposed below the top chamber and having a bottom space; a first rotational support which supports and rotates the substrate positioned in the top space; and a second rotational support which supports and rotates the substrate positioned in the bottom space, wherein the first rotational support and the second rotational support may be used for alignment inspection of the substrate and vision inspection of the substrate.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
40.
LOAD LOCK CHAMBER AND APPARATUS FOR TREATING SUBSTRATE
Provided is an apparatus for treating a substrate, the apparatus including: an equipment front end module including a load port and a transfer frame; a process chamber for performing a process treatment on a substrate; and a load lock chamber disposed in a transfer path of the substrate transferred between the transfer frame and the process chamber, in which the load lock chamber includes: a housing having an interior space; a compartmentalizing plate for compartmentalizing the interior space into a first space, and a second space independent of the first space; and an aligning unit for aligning a notch of the substrate provided in any one of the first space and the second space.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
The present invention provides a substrate processing apparatus including a housing, a support unit, a plasma generator, and a baffle. The housing has a processing space. The support unit supports a substrate in the processing space. The plasma generator is located outside the housing, generates plasma by discharging a process gas, and supplies the generated plasma to the processing space. The baffle is disposed above the support unit and ensures that the plasma moving from the plasma generator to the processing space is uniformly delivered to the substrate. The baffle has a body having holes that provide paths for the plasma to move, and some or all of the holes are inclined.
The present invention provides a method for treating a substrate. The substrate treatment method of one embodiment comprises: a hard mask film removal step of removing, from a substrate, a hard mask film on the top part of a thin film formed on the substrate; and a cleaning step of removing a specific film formed on the substrate, wherein the hard mask film removal step and the cleaning step can be carried out in the same chamber.
H01L 21/02 - Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/027 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
37 - Construction and mining; installation and repair services
Goods & Services
Machines for manufacturing semiconductors; semiconductor processing machines; LCD processing machines; LED manufacturing machines; OLED manufacturing machines; waste gas treatment device for semiconductor manufacturing processes being filters and purifiers for removing contaminants from gasses used in the semiconductor industry; waste gas treatment device for OLED manufacturing processes being filters and purifiers for removing contaminants from gasses used in the OLED industry; waste gas treatment device for LCD manufacturing processes being filters and purifiers for removing contaminants from gasses used in the LCD industry; waste gas treatment device for LED manufacturing processes being filters and purifiers for removing contaminants from gasses used in the LED industry; waste gas treatment device for solar panel manufacturing processes being filters and purifiers for removing contaminants from gasses used in the solar panel industry; fluid dispensers for semiconductor processing machines; fluid dispensers for OLED processing machines; fluid dispensers for LED processing machines; fluid dispensers for LCD processing machines Repair of semiconductor manufacturing machines; repair of crystalline liquid manufacturing machines; maintenance of semiconductor manufacturing machines; maintenance of crystalline liquid manufacturing machines; providing information relating to the repair or maintenance of semi-conductor manufacturing machines and systems; installation, maintenance and repair of LCD panels; installation, maintenance and repair of light emitting diode (LED) making apparatus; installation, maintenance and repair of OLED making apparatus; installation, maintenance and repair of semiconductor processing machines
37 - Construction and mining; installation and repair services
Goods & Services
Machines for manufacturing semiconductors; semiconductor processing machines; LCD processing machines; LED manufacturing machines; OLED manufacturing machines; waste gas treatment device for semiconductor manufacturing processes being filters and purifiers for removing contaminants from gasses used in the semiconductor industry; waste gas treatment device for OLED manufacturing processes being filters and purifiers for removing contaminants from gasses used in the OLED industry; waste gas treatment device for LCD manufacturing processes being filters and purifiers for removing contaminants from gasses used in the LCD industry; waste gas treatment device for LED manufacturing processes being filters and purifiers for removing contaminants from gasses used in the LED industry; waste gas treatment device for solar panel manufacturing processes being filters and purifiers for removing contaminants from gasses used in the solar panel industry; fluid dispensers for semiconductor processing machines; fluid dispensers for OLED processing machines; fluid dispensers for LED processing machines; fluid dispensers for LCD processing machines Repair of semiconductor manufacturing machines; repair of crystalline liquid manufacturing machines; maintenance of semiconductor manufacturing machines; maintenance of crystalline liquid manufacturing machines; providing information relating to the repair or maintenance of semi-conductor manufacturing machines and systems; installation, maintenance and repair of LCD panels; installation, maintenance and repair of light emitting diode (LED) making apparatus; installation, maintenance and repair of OLED making apparatus; installation, maintenance and repair of semiconductor processing machines
Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.
A method of manufacturing a porous filter includes a step of preparing a first porous filter having first micropores, a step of increasing the size of the first micropores by stretching while heating the first porous filter, a step of maintaining the increased size of the first micropores by sucking a liquid into the increased first micropores, and a step of forming a second porous filter having second micropores larger than the first micropores by evaporating the liquid.
The present invention provides a substrate processing method. In the substrate processing method according to an embodiment, a substrate is processed by supplying process gas into a chamber, wherein a part of the process gas is excited into a state of plasma, the plasma removes a hard mask film formed on a substrate from the substrate, another part of the process gas reacts with a thin film formed on the substrate to form a passivation film on the surface of the thin film, and the process gas may be a CHF-based gas.
The present invention provides a method for processing a substrate. A method for processing a substrate, according to one embodiment, supplies a gas to a processing space in a chamber, and excites the gas to remove a plurality of thin films formed on a substrate and a hard mask film among hard mask films located on top of the thin films, wherein the hard mask film may include boron and/or a metal other than carbon.
H01L 21/033 - Making masks on semiconductor bodies for further photolithographic processing, not provided for in group or comprising inorganic layers
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides a substrate processing method. A substrate processing method according to an embodiment may include a first step of supplying a process gas to a chamber and exciting the process gas to react with a specific film formed on the substrate to generate a reaction product, and a second step of supplying a dissociation gas to the chamber and exciting the dissociation gas to remove the reaction product from the substrate.
The inventive concept provides a substrate treating method. The substrate treating method includes taking in a substrate to a treating space to mount on a support unit; upwardly moving the support unit after mounting the substrate on the support unit; determining whether the support unit moves normally after the upwardly moving the support unit; and treating the substrate by generating a plasma in the treating space, and wherein at the determining whether the support unit moves normally, before the plasma is generated at the treating space at the treating the substrate, whether a pulse distance matching a predetermined distance data according to a pulse value of a driving unit which pulse-moves a moving body which moves the support unit in a top/down direction, matches a movement distance of the moving body is determined, and an interlock is generated if the pulse distance and the movement distance is different.
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit positioned within the treating space and configured to apply a power and to support a substrate; and a plasma control unit configured to change a characteristic of a plasma formed in the treating space, and wherein the plasma control unit includes: a gap control plate positioned above the support unit; and a plate driver changing a position of the gap control plate, and the plate driver maintains a gap between a bottom surface of the gap control plate and a top surface of the support plate while changing a characteristic of the plasma by changing the position of the gap control plate.
The inventive concept provides a substrate treating method. The substrate treating method includes treating an edge region of a substrate using a plasma; and acquiring an image to be determined by imaging a substrate on which a treatment has been completed in the treating the edge region, comparing the image to be determined with an image stored in a database, and determining whether a substrate treated in the treating the edge region is defective or not, and wherein the image stored in the database is a defective image of a substrate which has been determined as defective, which is previously stored in the database in the acquiring the image to be determined.
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support plate for supporting a substrate and applying a power; a plasma control unit placed above the support plate to face the support plate; and a top electrode unit positioned to surround the plasma control unit, and wherein the plasma control unit includes: a dielectric plate positioned to face a top surface of a substrate mounted on the support plate; and a metal plate positioned above the dielectric plate, and the metal plate is electrically connected to the top electrode unit.
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substrate at the treating space; and a gas supply unit configured to supply a gas which is excited to a plasma to the treating space, and wherein the support unit includes: a chuck supporting a center region of the substrate; and an edge electrode formed in a ring shape, and wherein the edge electrode includes: a body portion surrounding the chuck at an outer side of the chuck; and a protrusion portion formed protruding to an outer side of the body portion, and a hole is formed at the protrusion portion penetrating the protrusion portion and which exhausts an atmosphere of the treating space.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
55.
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Disclosed is a method of processing a substrate. The method may include: a substrate loading operation of loading a substrate into a treating space of a chamber; a film removal operation of removing a film provided on the substrate; a protective film formation operation of forming a protective film containing oxygen on the substrate; and a substrate unloading operation of unloading the substrate from the treating space.
Disclosed is an apparatus for processing a substrate, the apparatus including: a housing providing a processing space therein; support unit disposed within the housing and supporting a substrate; and a plasma generating unit provided above the housing, in which the plasma supplying unit includes: a plasma chamber with a discharge space formed inside; a diffusion member provided between the plasma chamber and the housing, and diffusing plasma; a plasma source for generating plasma in the discharge space from process gas; and a sealing member provided between a lower flange of the plasma chamber and an upper flange of the diffusion member, and the sealing member includes: an inner sealing member inserted into a mounting groove formed in an upper surface of the upper flange; and an outer sealing member inserted into a space formed by combination of the upper flange and the lower flange, and positioned at a further outward side from the discharge space than the inner sealing member.
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having a treating space; a support unit configured to support a substate within the treating space; and a plasma source for generating a plasma by exciting a gas supplied to the treating space, and wherein the support unit includes: a chuck having the substrate mounted to a top surface thereof; and a ring member in a ring shape surrounding an outer side of the chuck, and the ring member includes a cut surface which divides the ring member and a holding member positioned at the cut surface which holds a position of the ring member which is divided by the cut surface.
The present invention provides an apparatus for processing a substrate. The apparatus for processing the substrate comprises: a housing that provides a processing space therein; a plasma generating unit that generates plasma from a process gas; an induction unit located between the plasma generating unit and the housing and providing a passage through which the plasma is supplied to the processing space; and a sealing member provided to seal a connection portion of the plasma generating unit and the induction unit, wherein the sealing member may comprise: a packing; a packing flange that supports the packing; and a packing shield that blocks direct exposure of the packing to plasma flowing out through a gap in the connection portion.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
Provided in the present invention is an apparatus for collecting powder in exhaust gas comprising: a device for collecting powder contained in exhaust gas before the exhaust gas is introduced into a cylindrical adsorption reaction device that treats the exhaust gas using an adsorption reaction, wherein a cylindrical filter body includes a filter member that filters the exhaust gas and is disposed underneath the adsorption reaction device so as to be connected to the adsorption reaction device; a housing that provides an internal space to house the filter body, and a filter striking module that applies a physical impact to the filter body to dislodge powder adhering to the filter member.
An apparatus includes a filter body, which filters an exhaust gas and feeds it to an adsorption reaction device and is disposed below the adsorption reaction device; and a housing which provides an internal space for storing powder separated from the filter body and is installed below the adsorption reaction device, which housing includes a filter installation unit, which is a space projected below the adsorption reaction device and which provides a filter installation space internally for installing the filter body and an expansion unit that protrudes sideways from the filter installation unit and provides an expansion space which communicates internally with the filter installation space, and the internal space is expanded by the expansion space to increase the powder collection capacity. A suction port for sucking in the exhaust gas is installed in the expansion unit.
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
B01D 46/24 - Particle separators, e.g. dust precipitators, using rigid hollow filter bodies
B01D 46/681 - Regeneration of the filtering material or filter elements inside the filter by means acting on the cake side involving movement with regard to the filter elements by scrapers, brushes or the like
A substrate processing apparatus is provided. The substrate processing apparatus includes a chuck supporting a substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate supported on the chuck, and an edge electrode provided to surround the substrate supported on the chuck when viewed from above and to generate plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from an inner periphery of the edge electrode to an outer periphery of the edge electrode when viewed from above is formed in the edge electrode.
The present invention presents a scrubber burner composed of a preheating spray ring that is formed with a porous material with certain thickness, and that preheats and sprays the fuel gas in the preheating combustion space formed inside, a preheating guide ring equipped with multiple preheating guide holes that wrap the outer circumference of the aforementioned preheating spray ring, and that penetrates from the outer circumference to the inner circumference, and a preheating burner module equipped with a housing that forms a ring shaped gas channel that is separated from the outer circumference of the aforementioned preheating guide ring and through which the aforementioned fuel gas flows.
F23G 7/06 - Methods or apparatus, e.g. incinerators, specially adapted for combustion of specific waste or low grade fuels, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
F23D 14/32 - Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid using a mixture of gaseous fuel and pure oxygen or oxygen-enriched air
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first body; a second body which is different from the first body; and a sealing unit which seals the connection portion between the first body and the second body, wherein the sealing unit comprises: a sealing member which seals the connection portion; and an interface member which comes into contact with the first body or the second body and is provided as a material having higher thermal conductivity than the sealing member.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A dry gas scrubber is disclosed. The dry gas scrubber is for treatment of an effluent stream and comprises: a chamber having an inlet for receiving the effluent stream, a cooler coupled with the inlet and configured to cool the effluent stream, and a resin chamber downstream of the cooler and configured to receive the effluent stream for treatment. In this way, the cooler is interposed between the process tool and the resin chamber and operates to cool the effluent stream prior to its being delivered to the resin chamber. Cooling the effluent stream in this way helps to improve the performance of the resin, even when the effluent stream is at an elevated temperature.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
The present invention provides a substrate processing apparatus. The substrate processing apparatus comprises: a chamber having a first space and a second space communicating with the first space; a plasma source generating plasma in the first space or the second space; and a light analysis unit monitoring light generated in the first space and the second space, wherein the light analysis unit may include a first receiving part that receives light from the first space, and a second receiving part that receives light from the second space.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/66 - Testing or measuring during manufacture or treatment
G01J 1/02 - Photometry, e.g. photographic exposure meter Details
An apparatus for a dry gas scrubber includes: a cooling chamber defined by a housing having an inlet for receiving an effluent stream for treatment by the dry gas scrubber, an outlet for providing the effluent stream for treatment by the dry gas scrubber, and at least one cooling plate within the chamber, the cooling plate being thermally coupled with the housing and configured to deviate a direction of flow of the effluent stream when flowing from the inlet to the outlet. In this way, the cooling chamber is interposed between the process tool and the resin chamber of the dry gas scrubber and operates to cool the effluent stream prior to its being delivered to the resin chamber. Cooling the effluent stream in this way helps to improve the performance of the resin, even when the effluent stream is at an elevated temperature.
B01D 53/04 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
B01D 53/00 - Separation of gases or vapoursRecovering vapours of volatile solvents from gasesChemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases or aerosols
B01F 25/431 - Straight mixing tubes with baffles or obstructions that do not cause substantial pressure dropBaffles therefor
B01D 46/24 - Particle separators, e.g. dust precipitators, using rigid hollow filter bodies
F23J 15/06 - Arrangements of devices for treating smoke or fumes of coolers
F23J 15/02 - Arrangements of devices for treating smoke or fumes of purifiers, e.g. for removing noxious material
B01D 46/00 - Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may comprise: a process treatment unit that provides a treatment space in which the substrate is treated; and a plasma generation unit that is provided above the process treatment unit and generates plasma from a process gas. The plasma generation unit includes: a plasma chamber having an electric discharge space formed therein; a shield unit surrounding the exterior of the plasma chamber; an antenna which surrounds the shield unit from the outside of the shield unit and to which high-frequency power is applied; and a connection unit electrically connecting the shield unit and the antenna.
A substrate treating apparatus includes a process treating unit providing a treating space for treating a substrate and a plasma generation unit provided above the process treating unit and generating a plasma from a process gas. The plasma generation unit includes a plasma chamber having a discharge space formed therein, an antenna surrounding an outside of the plasma chamber and flowing a high frequency current therethrough, and a cover member surrounding an outside of the antenna, and wherein the cover member is grounded.
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate comprises: a chamber defining a processing space; a gas supply unit for supplying a processing gas to the processing space; and a support unit supporting the substrate in the processing space, wherein the support unit comprises: a chuck supporting the substrate; a power source applying an RF power to the chuck; and a discharging path for removing static electricity generated on the chuck.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides an apparatus for treating a substrate. The apparatus for treating a substrate may comprise: a process treatment part which provides a treatment space where a substrate is treated; and a plasma source which generates plasma from process gas, wherein: the plasma source includes an antenna which has a coil wound in multiple turns, and a power application unit which applies high-frequency power to the coil; a first ground line is connected to one end of the coil and a second ground line is connected to the other end of the coil; and the power application unit is connected to the coil so as to apply high-frequency power directly to the coil at a position between one end and the other end of the coil.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
71.
SUPPORT UNIT AND SUBSTRATE PROCESSING APPARATUS COMPRISING SAME
The present invention comprises: a support plate having an upper space, on which a substrate is placed, and an inner space; a lift pin assembly which transfers the substrate between an external transport unit and the support plate; and a decompression unit applying a negative pressure into the inner space, wherein the upper surface of the support plate has a vacuum hole formed therein, the vacuum hole being in communication with the inner space and sucking the substrate placed on the support plate. The lift pin assembly comprises: a base plate located in the inner space; a plurality of lift pins which are provided to protrude onto the base plate and support the bottom surface of the substrate; and a driver which moves up and down the base plate in the inner space. The base plate may have a through-hole which passes therethrough vertically so as to provide the negative pressure provided to the lower region of the base plate in the inner space to the upper region of the base plate from the inner space.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The present invention provides a substrate processing apparatus. The substrate processing apparatus comprises: a housing having an inner space; a lower electrode unit supporting a substrate in the inner space; an upper electrode unit facing the lower electrode unit; and a gas supply unit supplying a processing gas into the inner space, wherein the upper electrode unit may comprise: a dielectric plate facing the upper surface of the substrate that is supported by the lower electrode unit; a support body supporting the dielectric plate, the support body and the dielectric plate being combined with each other to form a buffer space and the gas supply unit supplying the processing gas into the inner space via the buffer space; and a baffle ring which is disposed on a flow path of the processing gas which flows from the buffer space to the inner space.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
73.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a chuck which supports a substrate; a gas supply unit which supplies process gas to the edge region of the substrate supported by the chuck; and an edge electrode which is provided to surround the substrate supported by the chuck as viewed from above and generates plasma from the gas, wherein the edge electrode has a ring shape, and the edge electrode has a groove formed to be indented in a direction from the inner circumference toward the outer circumference of the edge electrode as viewed from above.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
75.
SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
The present invention provides a device for processing a substrate. The device for processing a substrate may comprise: a housing having an inner space; a chuck for supporting a substrate in the inner space; a gas supply unit for supplying process gas to an edge region of the substrate; an edge electrode for generating plasma from the process gas at the edge region of the substrate supported by the chuck; and a dielectric plate facing the substrate supported by the chuck, wherein the dielectric plate is movably divided.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides a substrate-processing apparatus. The substrate-processing apparatus comprises: a housing having a processing space for processing a substrate; a support unit for supporting the substrate in the processing space; a plasma source for generating plasma using a process gas supplied to the processing space; and a connector assembly for supplying power to components provided in the apparatus, wherein the connector assembly may comprise a body having a groove formed on the outer surface thereof, a pin unit inserted into the groove, and a fuse installed in the pin unit.
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate comprises: a housing providing a processing space; a support unit disposed inside the processing space to support a substrate; and a plasma source provided above the housing and for generating plasma from a process gas. The top surface of the support unit comprises a first area comprising the center and a second area surrounding the first area. A groove, which is formed between the first area and the second area and is inwardly indented from the top surface of the support unit, is formed on the support unit. The support unit comprises: a plurality of first support protrusions formed on the first area and supporting the bottom surface of the substrate; a plurality of second support protrusions formed on the second area and supporting the bottom surface of the substrate; and a suctioning hole formed in the bottom surface of the groove to vacuum suction the substrate. A first shape formed by virtual straight lines connecting the plurality of first support protrusions may form symmetry with a second shape formed by virtual straight lines connecting the plurality of second support protrusions.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
The present invention provides a substrate treatment apparatus. In one embodiment, a substrate treatment apparatus comprises: a housing in which an upper housing and a lower housing are combined to define a treatment space; a gas supply unit for supplying gas to the treatment space; a support unit which is provided in the treatment space and which has a chuck for supporting the substrate, and a lower electrode provided to surround the chuck when viewed from above; a dielectric plate unit which is provided in the treatment space and which has a dielectric plate disposed to face the substrate supported by the support unit; and an upper electrode unit which is coupled to the dielectric plate unit and which has an upper electrode disposed to face the lower electrode, wherein the upper electrode unit can be coupled to the lower housing.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
79.
SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
The present invention provides a device for processing a substrate. The device for processing a substrate may comprise: a housing which has a processing space; a gas supply unit which supplies gas into the processing space; a support unit which has a chuck for supporting a substrate in the processing space and a lower electrode provided to surround the chuck as viewed from above; a temperature control plate which is provided in the housing; a dielectric plate unit which is coupled to the temperature control plate and has a dielectric plate disposed opposite to the substrate supported by the support unit in the processing space; and an upper electrode unit which is coupled to the temperature control plate and has an upper electrode disposed opposite to the lower electrode, wherein the dielectric plate unit includes a first base which is disposed between the dielectric plate and the temperature control plate.
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a first housing; a second housing combined with the first housing to define an internal space; a rotation coupling part for fastening the first housing and the second housing to each other such that one of the first housing and the second housing is rotatable with respect to the other one of the first housing and the second housing; and a channel which supplies a fluid to the internal space or discharges the fluid from the internal space, and has at least a part thereof inserted into a pin hole formed in the rotation coupling part.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Provided is a substrate processing apparatus including: a chuck configured to support a substrate; a dielectric plate disposed to face an upper surface of the substrate supported by the chuck; a gas supply unit configured to supply process gas to an edge region of the substrate; and a first edge electrode configured to generate plasma from the process gas to the edge region of the substrate supported by the chuck, in which the first edge electrode includes: a plurality of electrode units; and one or more insulating units provided between the electrode units.
The present invention provides a substrate processing device. In an embodiment, the substrate processing device includes: a housing having an open upper portion and having a processing space therein; a gas supply unit for supplying gas to the processing space; a support unit having a chuck supporting a substrate in the processing space and a lower electrode provided to surround the chuck when viewed from above; a dielectric plate unit having a dielectric plate disposed to face the substrate supported by the support unit in the processing space; an upper electrode unit coupled to the dielectric plate unit and having an upper electrode disposed to face the lower electrode; and an alignment unit for aligning the horizontal arrangement of the dielectric plate unit, wherein a lead extending horizontally from the housing and coupled to the upper electrode unit is provided on top of the housing, and the alignment unit may be coupled to the lead.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
The present invention provides a substrate processing apparatus. This substrate processing apparatus comprises: a processing chamber that provides a processing space for processing a substrate; a plasma-generating chamber for generating plasma from a process gas, the generated plasma being supplied to the processing space; a diffusion chamber for diffusing, to the processing space, the plasma generated in the plasma-generating chamber; a baffle which is installed on the upper end of the processing chamber and has a plurality of baffle holes; and an air current-guiding member which is provided inside the diffusion chamber and guides the flow direction of the plasma. The air current-guiding member includes a guide body by which the flow direction of the plasma partially changes. The guide body includes an upper guide body which combines with a side wall of the diffusion chamber to form a first passage, and a lower guide body which is disposed below the upper guide body and combines with the upper guide body to form a second passage.
The present invention provides a device for processing a substrate. The device for processing a substrate may comprise: a chuck for supporting the substrate; a gas supply unit for supplying process gas to an edge region of the substrate supported by the chuck; and an edge electrode which is provided so as to surround the substrate supported by the chuck when viewed from above, and generates plasma from the gas, wherein the edge electrode has a ring shape and a groove recessed in a direction from the inner circumference toward the outer circumference of the edge electrode when viewed from above.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
G01B 11/02 - Measuring arrangements characterised by the use of optical techniques for measuring length, width, or thickness
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may comprise: a housing having a processing space in which a substrate is processed; a window unit which covers the top of the processing space so as to seal the processing space; a support unit which supports the substrate in the processing space; a gas supply unit including a nozzle through which gas is supplied into the processing space; and a plasma unit which is disposed outside the processing space and generates plasma from the gas, wherein the nozzle comprises: a body having an inner space and an outlet through which the gas in the inner space is supplied into the processing space; and an insertion member inserted into the top of the body.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate comprises: a chamber that has a processing space for processing a substrate and an entrance through which a substrate enters and exits; a gas supply unit that supplies a process gas to the processing space; a plasma unit that generates plasma from the process gas; and a door assembly that opens and closes the entrance, wherein the door assembly includes a door that opens and closes the entrance, and a door actuator that moves the door between an open position and a closed position, and the door may include a housing having a passage at one side thereof, wherein an air flow is induced in the passage, and an internal space, a valve that opens or closes the passage, and a valve actuator that moves the valve between an open position and a closed position.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F16K 3/02 - Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing with flat sealing facesPackings therefor
F16K 51/02 - Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
The present invention provides a device for processing a substrate. The device for processing a substrate may comprise: a chamber having a processing space; a support unit which supports a substrate in the processing space; a gas supply unit which supplies a process gas into the processing space; and a plasma generation unit which generates plasma from the process gas, wherein the plasma generation unit comprises: an inner coil part; an outer coil part which is formed to surround the inner coil part, as viewed from above; an upper power supply which applies power to the inner coil part and the outer coil part; and a ground plate which is disposed above the inner coil part and the outer coil part to ground the inner and outer coil parts.
The present invention presents a burner for scrubbers equipped with the first nozzle that is in the shape of a pipe and that is equipped with the first main body, the second nozzle that is in the shape of a pipe and equipped with the second main body that is located to wrap the outer circumference of the aforementioned first main body, and the third nozzle that is in the shape of a pipe and that is equipped with the third main body located to wrap the outer circumference of the aforementioned second main body.
F23D 14/22 - Non-premix gas burners, i.e. in which gaseous fuel is mixed with combustion air on arrival at the combustion zone with separate air and gas feed ducts, e.g. with ducts running parallel or crossing each other
F23D 14/32 - Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid using a mixture of gaseous fuel and pure oxygen or oxygen-enriched air
F23G 7/06 - Methods or apparatus, e.g. incinerators, specially adapted for combustion of specific waste or low grade fuels, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
F23D 14/58 - Nozzles characterised by the shape or arrangement of the outlet or outlets from the nozzle, e.g. of annular configuration
The present invention provides a substrate treatment apparatus. The substrate treatment apparatus comprises: a facility front end module having a load port and a transfer frame; a process chamber for performing a treatment process for a substrate; and a load lock chamber disposed on a conveyor path of the substrate conveyed between the transfer frame and the process chamber. The load lock chamber may comprise: a housing having an inner space; a partition plate partitioning the inner space into a first space and a second space independent from the first space; and an alignment unit, for aligning notches of the substrate, provided in any one of the first space and the second space.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 21/68 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for positioning, orientation or alignment
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Provided is a lift pin assembly. In an embodiment, the lift pin assembly may comprise: a driving member; a horizontal bar that is raised and lowered vertically by the driving member; at least one pin support member which moves vertically according to the raising and lowering of the horizontal bar and in which lift pins are installed; and a guide member that guides the movement of the pin support member. The pin support member may include: a lift hoop in which the lift pins are installed; a shaft for supporting the lift hoop; a bellows provided surrounding the shaft; and a shaft ring provided on the outer circumferential surface of the shaft so as to prevent a gap from forming between the shaft and the bellows.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The inventive concept relates to an apparatus for processing a substrate. In an embodiment, the apparatus for processing the substrate includes a plasma chamber, a coil electrode installed around the plasma chamber, and a Faraday shield provided between the coil electrode and the plasma chamber. The Faraday shield includes a cutout having a plurality of slots formed in a vertical direction along a periphery of the plasma chamber, an upper rim provided at the top of the cutout, and a lower rim provided at the bottom of the cutout. The upper rim and the lower rim have a thermal expansion reduction means configured to reduce a difference in thermal deformation between the upper and the lower rim and the cutout.
The present invention provides a device for processing a substrate. The device for processing a substrate comprises: a housing having a processing space provided therein; a support unit disposed in the housing to support the substrate; and a plasma generating unit provided above the housing, wherein the plasma generating unit comprises: a plasma chamber having a discharge space formed therein; a diffusion member, which is provided between the plasma chamber and the housing and diffuses plasma; a plasma source for generating plasma in the discharge space from a processing gas; and a sealing member provided between a lower flange of the plasma chamber and an upper flange of the diffusion member, and the sealing member may comprise an inner sealing member inserted into a mounting groove formed on the upper surface of the upper flange, and an outer sealing member inserted into an in-between space formed by combining the upper flange and the lower flange with each other, and positioned farther outside the discharge space than the inner sealing member.
A substrate processing method is provided. The substrate processing method may comprise: a substrate entering step of entering a substrate into a processing space included in a chamber; a film removal step of removing a film provided on the substrate; a protection film formation step of forming, on the substrate, a protection film including oxygen; and a substrate withdrawing step of withdrawing the substrate from the processing space.
The present invention provides a support unit included in an apparatus for treating a substrate by using plasma. The support unit may include: a chuck configured to support a lower surface of the substrate; a moving plate provided to surround the chuck when viewed from above; and a lifting member configured to change an exposed area of an edge region of the substrate supported by the chuck for the treating space by relatively moving the moving plate in an upper or lower direction with respect to the chuck.
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
95.
SUBSTRATE PROCESSING APPARATUS AND METHOD FOR SENSING LEAKAGE FROM PROCESSING CHAMBER
The present invention provides a method for sensing leakage from a processing chamber that is a vacuum chamber. According to the method for sensing leakage from a processing chamber, leakage from a processing chamber can be sensed by using the temperature of the processing chamber, which is measured by a temperature measurement member installed in the processing chamber, and an opening/closing ratio of a valve installed on a pressure adjusting line which adjusts the pressure in the processing chamber.
H01L 21/67 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing, a support unit including a chuck that supports a substrate, a gas supply unit, and a dielectric plate that faces an upper surface of the substrate supported by the chuck, a height of a lower surface of a central area of the dielectric plate and a height of a lower surface of an edge area of the dielectric plate are different, and a height of an upper surface of a central area of the chuck and a height of an upper surface of an edge area of the chuck are different.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
97.
Substrate processing apparatus and substrate transfer method
An apparatus for processing a substrate includes a housing having a processing space therein, a transfer robot that loads the substrate into the processing space or unloads the substrate from the processing space, a support unit including a chuck that supports the substrate in the processing space and a lift pin that moves the substrate in an up-down direction, a dielectric plate having a lower surface disposed to face an upper surface of the chuck, and a gap measurement unit that measures a gap between the dielectric plate and the substrate supported by the lift pin or a gap between the dielectric plate and the chuck.
H01L 21/683 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping
H01L 21/66 - Testing or measuring during manufacture or treatment
H01L 21/687 - Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereofApparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
Semiconductor processing machines; semiconductor wafer processing equipment; machines for manufacturing semiconductors; apparatus for manufacturing semiconductors; marking apparatus for manufacturing semiconductors, namely, laser machines for marking semiconductors; Machines for manufacturing semiconductors, namely, sputtering apparatus for semiconductor processing machines; laser marking machines for semiconductor lead frame; semiconductor washing equipment, namely, semiconductor washing machines; semiconductor substrates manufacturing machines; vacuum chambers used in manufacturing semiconductor substrates, namely, for processing semiconductor substances; etching apparatus for use in manufacturing semiconductor substrates; manufacturing apparatus for substrates, namely, semiconductor substrates manufacturing machines; processing apparatus for substrates, namely, semiconductor substrates manufacturing machines; etching apparatus for use in manufacturing semiconductor wafers; ashing apparatus for use in the manufacture of semiconductor wafers; processing apparatus for semiconductor wafer, namely, semiconductor wafer processing equipment; processing machine apparatus for semiconductors
