|
C30B 1/00
|
Single-crystal growth directly from the solid state |
|
C30B 1/02
|
Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing |
|
C30B 1/04
|
Isothermal recrystallisation |
|
C30B 1/06
|
Recrystallisation under a temperature gradient |
|
C30B 1/08
|
Zone recrystallisation |
|
C30B 1/10
|
Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion |
|
C30B 1/12
|
Single-crystal growth directly from the solid state by pressure treatment during the growth |
|
C30B 3/00
|
Unidirectional demixing of eutectoid materials |
|
C30B 5/00
|
Single-crystal growth from gels |
|
C30B 5/02
|
Single-crystal growth from gels with addition of doping materials |
|
C30B 7/00
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions |
|
C30B 7/02
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent |
|
C30B 7/04
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using aqueous solvents |
|
C30B 7/06
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents |
|
C30B 7/08
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by cooling of the solution |
|
C30B 7/10
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes |
|
C30B 7/12
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis |
|
C30B 7/14
|
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution |
|
C30B 9/00
|
Single-crystal growth from melt solutions using molten solvents |
|
C30B 9/02
|
Single-crystal growth from melt solutions using molten solvents by evaporation of the molten solvent |
|
C30B 9/04
|
Single-crystal growth from melt solutions using molten solvents by cooling of the solution |
|
C30B 9/06
|
Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition |
|
C30B 9/08
|
Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents |
|
C30B 9/10
|
Metal solvents |
|
C30B 9/12
|
Salt solvents, e.g. flux growth |
|
C30B 9/14
|
Single-crystal growth from melt solutions using molten solvents by electrolysis |
|
C30B 11/00
|
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method |
|
C30B 11/02
|
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method without using solvents |
|
C30B 11/04
|
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt |
|
C30B 11/06
|
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added |
|
C30B 11/08
|
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation |
|
C30B 11/10
|
Solid or liquid components, e.g. Verneuil method |
|
C30B 11/12
|
Vaporous components, e.g. vapour-liquid-solid-growth |
|
C30B 11/14
|
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method characterised by the seed, e.g. its crystallographic orientation |
|
C30B 13/00
|
Single-crystal growth by zone-meltingRefining by zone-melting |
|
C30B 13/02
|
Zone-melting with a solvent, e.g. travelling solvent process |
|
C30B 13/04
|
Homogenisation by zone-levelling |
|
C30B 13/06
|
Single-crystal growth by zone-meltingRefining by zone-melting the molten zone not extending over the whole cross-section |
|
C30B 13/08
|
Single-crystal growth by zone-meltingRefining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone |
|
C30B 13/10
|
Single-crystal growth by zone-meltingRefining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials |
|
C30B 13/12
|
Single-crystal growth by zone-meltingRefining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state |
|
C30B 13/14
|
Crucibles or vessels |
|
C30B 13/16
|
Heating of the molten zone |
|
C30B 13/18
|
Heating of the molten zone the heating element being in contact with, or immersed in, the molten zone |
|
C30B 13/20
|
Heating of the molten zone by induction, e.g. hot wire technique |
|
C30B 13/22
|
Heating of the molten zone by irradiation or electric discharge |
|
C30B 13/24
|
Heating of the molten zone by irradiation or electric discharge using electromagnetic waves |
|
C30B 13/26
|
Stirring of the molten zone |
|
C30B 13/28
|
Controlling or regulating |
|
C30B 13/30
|
Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fieldsControlling the section of the crystal |
|
C30B 13/32
|
Mechanisms for moving either the charge or the heater |
|
C30B 13/34
|
Single-crystal growth by zone-meltingRefining by zone-melting characterised by the seed, e.g. by its crystallographic orientation |
|
C30B 15/00
|
Single-crystal growth by pulling from a melt, e.g. Czochralski method |
|
C30B 15/02
|
Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt |
|
C30B 15/04
|
Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n–p-junction |
|
C30B 15/06
|
Non-vertical pulling |
|
C30B 15/08
|
Downward pulling |
|
C30B 15/10
|
Crucibles or containers for supporting the melt |
|
C30B 15/12
|
Double crucible methods |
|
C30B 15/14
|
Heating of the melt or the crystallised materials |
|
C30B 15/16
|
Heating of the melt or the crystallised materials by irradiation or electric discharge |
|
C30B 15/18
|
Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat |
|
C30B 15/20
|
Controlling or regulating |
|
C30B 15/22
|
Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal |
|
C30B 15/24
|
Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using mechanical means, e.g. shaping guides |
|
C30B 15/26
|
Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using television detectorsStabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using photo or X-ray detectors |
|
C30B 15/28
|
Stabilisation or shape controlling of the molten zone near the pulled crystalControlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods |
|
C30B 15/30
|
Mechanisms for rotating or moving either the melt or the crystal |
|
C30B 15/32
|
Seed holders, e.g. chucks |
|
C30B 15/34
|
Edge-defined film-fed crystal growth using dies or slits |
|
C30B 15/36
|
Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation |
|
C30B 17/00
|
Single-crystal growth on to a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method |
|
C30B 19/00
|
Liquid-phase epitaxial-layer growth |
|
C30B 19/02
|
Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux |
|
C30B 19/04
|
Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition |
|
C30B 19/06
|
Reaction chambersBoats for supporting the meltSubstrate holders |
|
C30B 19/08
|
Heating of the reaction chamber or the substrate |
|
C30B 19/10
|
Controlling or regulating |
|
C30B 19/12
|
Liquid-phase epitaxial-layer growth characterised by the substrate |
|
C30B 21/00
|
Unidirectional solidification of eutectic materials |
|
C30B 21/02
|
Unidirectional solidification of eutectic materials by normal casting or gradient freezing |
|
C30B 21/04
|
Unidirectional solidification of eutectic materials by zone-melting |
|
C30B 21/06
|
Unidirectional solidification of eutectic materials by pulling from a melt |
|
C30B 23/00
|
Single-crystal growth by condensing evaporated or sublimed materials |
|
C30B 23/02
|
Epitaxial-layer growth |
|
C30B 23/04
|
Pattern deposit, e.g. by using masks |
|
C30B 23/06
|
Heating of the deposition chamber, the substrate, or the materials to be evaporated |
|
C30B 23/08
|
Epitaxial-layer growth by condensing ionised vapours |
|
C30B 25/00
|
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth |
|
C30B 25/02
|
Epitaxial-layer growth |
|
C30B 25/04
|
Pattern deposit, e.g. by using masks |
|
C30B 25/06
|
Epitaxial-layer growth by reactive sputtering |
|
C30B 25/08
|
Reaction chambersSelection of materials therefor |
|
C30B 25/10
|
Heating of the reaction chamber or the substrate |
|
C30B 25/12
|
Substrate holders or susceptors |
|
C30B 25/14
|
Feed and outlet means for the gasesModifying the flow of the reactive gases |
|
C30B 25/16
|
Controlling or regulating |
|
C30B 25/18
|
Epitaxial-layer growth characterised by the substrate |
|
C30B 25/20
|
Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer |
|
C30B 25/22
|
Sandwich processes |
|
C30B 27/00
|
Single-crystal growth under a protective fluid |
|
C30B 27/02
|
Single-crystal growth under a protective fluid by pulling from a melt |
|
C30B 28/00
|
Production of homogeneous polycrystalline material with defined structure |
|
C30B 28/02
|
Production of homogeneous polycrystalline material with defined structure directly from the solid state |
|
C30B 28/04
|
Production of homogeneous polycrystalline material with defined structure from liquids |
|
C30B 28/06
|
Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient |
|
C30B 28/08
|
Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting |
|
C30B 28/10
|
Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt |
|
C30B 28/12
|
Production of homogeneous polycrystalline material with defined structure directly from the gas state |
|
C30B 28/14
|
Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases |
|
C30B 29/00
|
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape |
|
C30B 29/02
|
Elements |
|
C30B 29/04
|
Diamond |
|
C30B 29/06
|
Silicon |
|
C30B 29/08
|
Germanium |
|
C30B 29/10
|
Inorganic compounds or compositions |
|
C30B 29/12
|
Halides |
|
C30B 29/14
|
Phosphates |
|
C30B 29/16
|
Oxides |
|
C30B 29/18
|
Quartz |
|
C30B 29/20
|
Aluminium oxides |
|
C30B 29/22
|
Complex oxides |
|
C30B 29/24
|
Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co, or Al, e.g. ortho ferrites |
|
C30B 29/26
|
Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al |
|
C30B 29/28
|
Complex oxides with formula A3Me5O12, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets |
|
C30B 29/30
|
NiobatesVanadatesTantalates |
|
C30B 29/32
|
TitanatesGermanatesMolybdatesTungstates |
|
C30B 29/34
|
Silicates |
|
C30B 29/36
|
Carbides |
|
C30B 29/38
|
Nitrides |
|
C30B 29/40
|
AIIIBV compounds |
|
C30B 29/42
|
Gallium arsenide |
|
C30B 29/44
|
Gallium phosphide |
|
C30B 29/46
|
Sulfur-, selenium- or tellurium-containing compounds |
|
C30B 29/48
|
AIIBVI compounds |
|
C30B 29/50
|
Cadmium sulfide |
|
C30B 29/52
|
Alloys |
|
C30B 29/54
|
Organic compounds |
|
C30B 29/56
|
Tartrates |
|
C30B 29/58
|
Macromolecular compounds |
|
C30B 29/60
|
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape |
|
C30B 29/62
|
Whiskers or needles |
|
C30B 29/64
|
Flat crystals, e.g. plates, strips or discs |
|
C30B 29/66
|
Crystals of complex geometrical shape, e.g. tubes, cylinders |
|
C30B 29/68
|
Crystals with laminate structure, e.g. "superlattices" |
|
C30B 30/00
|
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions |
|
C30B 30/02
|
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis |
|
C30B 30/04
|
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields |
|
C30B 30/06
|
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using mechanical vibrations |
|
C30B 30/08
|
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity |
|
C30B 31/00
|
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor |
|
C30B 31/02
|
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion materials in the solid state |
|
C30B 31/04
|
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion materials in the liquid state |
|
C30B 31/06
|
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion material in the gaseous state |
|
C30B 31/08
|
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structureApparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused |
|
C30B 31/10
|
Reaction chambersSelection of materials therefor |
|
C30B 31/12
|
Heating of the reaction chamber |
|
C30B 31/14
|
Substrate holders or susceptors |
|
C30B 31/16
|
Feed and outlet means for the gasesModifying the flow of the gases |
|
C30B 31/18
|
Controlling or regulating |
|
C30B 31/20
|
Doping by irradiation with electromagnetic waves or by particle radiation |
|
C30B 31/22
|
Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation |
|
C30B 33/00
|
After-treatment of single crystals or homogeneous polycrystalline material with defined structure |
|
C30B 33/02
|
Heat treatment |
|
C30B 33/04
|
After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation |
|
C30B 33/06
|
Joining of crystals |
|
C30B 33/08
|
Etching |
|
C30B 33/10
|
Etching in solutions or melts |
|
C30B 33/12
|
Etching in gas atmosphere or plasma |
|
C30B 35/00
|
Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure |
